Upper layer-forming composition and resist patterning method

Abstract

A liquid immersion lithography upper-layer film-forming composition includes (A) a polymer that includes a structural unit (I) shown by the following formula (1), and (S) a solvent. R 1 in the formula (1) represents a hydrogen atom, a methyl group, or a trifluoromethyl group. The polymer (A) preferably further includes a structural unit (II) that includes a sulfo group. The polymer (A) preferably further includes a structural unit (III) shown by the following formula (3). R 2 in the formula (3) represents a hydrogen atom, a methyl group, or a trifluoromethyl group. R 3 represents a linear or branched monovalent hydrocarbon group having 1 to 12 carbon atoms or a monovalent alicyclic group having 3 to 20 carbon atoms, provided that at least one hydrogen atom of the hydrocarbon group or the alicyclic group is substituted with a fluorine atom.

1 - 7 . (canceled) 
     
     
         8 . A photoresist pattern-forming method comprising:
 applying a photoresist composition to a substrate to form a photoresist film;   applying a composition to the photoresist film to form a liquid immersion lithography upper-layer film, the composition comprising:
 (A) a polymer that comprises a structural unit (I) shown by a formula (1); and 
 (S) a solvent, 
   
       
         
           
           
               
               
           
         
       
       wherein R 1  represents a hydrogen atom, a methyl group, or a trifluoromethyl group;
 exposing the photoresist film and the liquid immersion lithography upper-layer film via an immersion medium and a mask having a given pattern, the immersion medium being disposed between the liquid immersion lithography upper-layer film and a lens; and 
 developing the photoresist film and the liquid immersion lithography upper-layer film that have been exposed. 
 
     
     
         9 . The photoresist pattern-forming method according to  claim 8 , wherein the polymer (A) further includes a structural unit (IV) shown by formula (4), 
       
         
           
           
               
               
           
         
       
       wherein R 4  represents a hydrogen atom, a methyl group, or a trifluoromethyl group, and R 5  represents a linear or branched monovalent hydrocarbon group having 1 to 12 carbon atoms or a monovalent alicyclic group having 3 to 20 carbon atoms. 
     
     
         10 . The photoresist pattern-forming method according to  claim 9 , wherein the polymer (A) further comprises a structural unit (III) shown by formula (3), 
       
         
           
           
               
               
           
         
       
       wherein R 2  represents a hydrogen atom, a methyl group, or a trifluoromethyl group, and R 3  represents a linear or branched monovalent hydrocarbon group having 1 to 12 carbon atoms or a monovalent alicyclic group having 3 to 20 carbon atoms, provided that at least one hydrogen atom of the hydrocarbon group or the alicyclic group is substituted with a fluorine atom. 
     
     
         11 . The photoresist pattern-forming method according to  claim 8 , wherein the composition further comprises (B) a polymer that includes the structural unit (I) and a structural unit (III) shown by formula (3), and has a fluorine atom content higher than that of the polymer (A), 
       
         
           
           
               
               
           
         
       
       wherein R 2  represents a hydrogen atom, a methyl group, or a trifluoromethyl group, and R 3  represents a linear or branched monovalent hydrocarbon group having 1 to 12 carbon atoms or a monovalent alicyclic group having 3 to 20 carbon atoms, provided that at least one hydrogen atom of the hydrocarbon group or the alicyclic group is substituted with a fluorine atom. 
     
     
         12 . The photoresist pattern-forming method according to  claim 9 , wherein the composition further comprises (B) a polymer that includes the structural unit (I) and a structural unit (III) shown by formula (3), and has a fluorine atom content higher than that of the polymer (A), 
       
         
           
           
               
               
           
         
       
       wherein R 2  represents a hydrogen atom, a methyl group, or a trifluoromethyl group, and R 3  represents a linear or branched monovalent hydrocarbon group having 1 to 12 carbon atoms or a monovalent alicyclic group having 3 to 20 carbon atoms, provided that at least one hydrogen atom of the hydrocarbon group or the alicyclic group is substituted with a fluorine atom. 
     
     
         13 . The photoresist pattern-forming method according to  claim 8 , wherein a content of the structural unit (I) in the polymer (A) is 20 to 99 mol % based on a total of structural units included in the polymer (A). 
     
     
         14 . The photoresist pattern-forming method according to  claim 9 , wherein a content of the structural unit (IV) in the polymer (A) is 5 to 55 mol % based on a total of structural units included in the polymer (A). 
     
     
         15 . The photoresist pattern-forming method according to  claim 10 , wherein a content of the structural unit (III) in the polymer (A) is 5 to 70 mol % based on a total of structural units included in the polymer (A). 
     
     
         16 . The photoresist pattern-forming method according to  claim 8 , wherein the polymer (A) further comprises a structural unit (V) which is shown by formula (5-1) or formula (5-2), 
       
         
           
           
               
               
           
         
       
       wherein R 10  and R 11  each represent a hydrogen atom, a methyl group, or a trifluoromethyl group, R 12  represents a single bond, a linear or branched alkanediyl group having 1 to 6 carbon atoms which is other than a 1,2-ethylene group, or a divalent alicyclic group having 4 to 12 carbon atoms, R 13  represents a single bond, a linear or branched alkanediyl group having 1 to 6 carbon atoms, or a divalent alicyclic group having 4 to 12 carbon atoms, and R 14  represents a linear or branched hydrocarbon group having 1 to 10 carbon atoms or a monovalent alicyclic group having 3 to 10 carbon atoms, provided that at least one hydrogen atom of the hydrocarbon group or the alicyclic group represented by R 14  is substituted with a fluorine atom. 
     
     
         17 . The photoresist pattern-forming method according to  claim 8 , wherein a content of the polymer (A) in the composition is 20 mass % or more based on a total of polymers included in the composition. 
     
     
         18 . The photoresist pattern-forming method according to  claim 8 , wherein a content of the polymer (A) in the composition is 40 mass % or more based on a total of polymers included in the composition. 
     
     
         19 . The photoresist pattern-forming method according to  claim 8 , wherein a content of the polymer (A) in the composition is 60 mass % or more based on a total of polymers included in the composition.