Vapor deposition systems and methods

Abstract

Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages.

What is claimed is: 
     
         1 . An atomic layer deposition process comprising:
 positioning a substrate in a reaction chamber having a top surface, a bottom surface and a sidewall between the top and bottom surfaces;   introducing a first precursor into the reaction chamber through a precursor port formed in the bottom surface;   removing gaseous species through an outlet port formed in the bottom surface;   introducing a second precursor in to the reaction chamber through a precursor port formed in the bottom surface; and   removing gaseous species through the outlet port formed in the bottom surface.   
     
     
         2 . The process of  claim 1 , further comprising introducing an inert gas into the reaction chamber. 
     
     
         3 . The process of  claim 1 , wherein introducing the first precursor comprises pulsing the first precursor and introducing the second precursor comprises pulsing the second precursor. 
     
     
         4 . The process of  claim 1 , wherein a layer of the first precursor is deposited on the substrate by pulsing the first precursor and a layer of the second precursor is deposited on the monolayer of the first precursor by pulsing the second precursor, the first precursor and the second precursor reacting to form a layer comprising a compound. 
     
     
         5 . The process of  claim 1 , further comprising repeating the steps of pulsing the first precursor and pulsing the second precursor. 
     
     
         6 . The process of  claim 1 , wherein the first precursor and the second precursor are introduced through the same precursor port. 
     
     
         7 . A trap designed for use in a vapor deposition system to imp gaseous species, wherein a majority of the surface area of the trap is substantially parallel to flow of gaseous species through the trap. 
     
     
         8 . The trap of  claim 7 , wherein the trap includes a corrugated surface. 
     
     
         9 . The trap of  claim 7 , wherein the trap is a coil assembly including a flat foil portion assembled with a corrugated thin foil portion. 
     
     
         10 . The trap of  claim 7 , wherein the trap is designed such that a precursor deposition distance along a length of the trap may be determined by a user by eye and is correlated to a precursor overdose. 
     
     
         11 . The trap of  claim 1 , wherein at least 95% of the surface area of the trap is substantially parallel to flow of gaseous species through the trap. 
     
     
         12 . An atomic layer deposition process comprising:
 positioning a substrate in a reaction chamber having a top surface, a bottom surface and a sidewall between the top and bottom surfaces;   introducing a first precursor into the reaction chamber through a precursor port formed in the bottom surface, wherein a precursor layer of the first precursor is deposited on the substrate;   removing gaseous species through an outlet port formed in the bottom surface;   introducing a second precursor into the reaction chamber through a precursor port formed in the bottom surface, wherein the precursor layer and the second precursor react to form a material layer on the substrate;   removing gaseous species through the outlet port formed in the bottom surface,   continuously introducing an inert gas into Site reaction chamber during the steps of introducing the first precursor, removing gaseous species, introducing the second precursor and removing gaseous species;   wherein the first precursor, the second precursor and the inert gas are introduced through the same precursor port,   wherein gaseous species are continuously removed from the reaction chamber during the process.   
     
     
         13 . The process of  claim 12 , wherein introducing the first precursor comprises pulsing the first precursor and introducing fee second precursor comprises pulsing the second precursor. 
     
     
         14 . The process of  claim 12 , further comprising introducing the first precursor into the reaction chamber directly from the precursor port formed in the bottom surface and introducing the second precursor into the reaction chamber directly from the precursor port formed in the bottom surface. 
     
     
         15 . The process of  claim 12 , wherein a manifold including an outlet is connected to the precursor port and respective inlets of the manifold are connected to a first precursor supply and a second precursor supply.