US2017155074A1PendingUtilityA1

Organic emitting diode and organic light emitting diode display device including the same

Assignee: LG DISPLAY CO LTDPriority: Nov 30, 2015Filed: Nov 17, 2016Published: Jun 1, 2017
Est. expiryNov 30, 2035(~9.3 yrs left)· nominal 20-yr term from priority
H10K 59/12H10K 50/165H10K 71/12H01L 2251/552H01L 51/5016H01L 27/3211H01L 51/5221H01L 27/3244H01L 51/56H01L 51/0003H01L 51/5004H01L 51/5206H01L 51/5076H01L 51/0004H10K 2101/40H10K 2101/10H10K 50/11H10K 2101/80H10K 71/00H10K 50/171H10K 2101/30H10K 30/865H10K 50/82H10K 71/15H10K 71/13H10K 59/35H10K 50/81
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Claims

Abstract

The present invention provides an organic emitting diode including a first electrode; a second electrode facing the first electrode; an emitting material layer between the first and second electrodes; and an intervening layer between the emitting material layer and the second electrode and including a base material and an electron injection material, wherein the intervening layer contacts the second electrode.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An organic emitting diode, comprising:
 a first electrode;   a second electrode facing the first electrode;   an emitting material layer between the first and second electrodes; and   an intervening layer between the emitting material layer and the second electrode and including a base material and an electron injection material,   wherein the intervening layer contacts the second electrode.   
     
     
         2 . The organic emitting diode according to  claim 1 , wherein the base material is a host material of the emitting material layer. 
     
     
         3 . The organic emitting diode according to  claim 2 , wherein the intervening layer has a LUMO energy level of about 3.0 eV to 2.6 eV and a triplet energy level of about 2.0 eV to about 2.5 eV. 
     
     
         4 . The organic emitting diode according to  claim 2 , wherein the intervening layer has an electron mobility of about 10 −6  cm 2 /Vs to about 10 −4  cm 2 /Vs. 
     
     
         5 . The organic emitting diode according to  claim 1 , wherein the base material is an electron transporting material. 
     
     
         6 . The organic emitting diode according to  claim 5 , wherein the electron transporting material has a LUMO energy level of about 3.0 eV to 2.0 eV and the electron transporting layer has a triplet energy level of about 2.0 eV to about 2.5 eV. 
     
     
         7 . The organic emitting diode according to  claim 5 , wherein the electron transporting material has an electron mobility of about 10 −5  cm 2 /Vs to about 10 −3  cm 2 /Vs. 
     
     
         8 . The organic emitting diode according to  claim 1 , wherein the electron injection material has a first density in a lower portion, which is adjacent to the emitting material layer, of the intervening layer and a second density, which is larger than the first density, in an upper portion, which is adjacent to the second electrode, of the intervening layer. 
     
     
         9 . The organic emitting diode according to  claim 1 , wherein the electron injection material includes an alkali metal. 
     
     
         10 . An organic light emitting diode display device, comprising:
 a substrate including a plurality of sub-pixels;   a transistor in each sub-pixel; and   an organic emitting diode positioned in each sub-pixel and connected to the transistor, the organic emitting diode including:
 a first electrode; 
 a second electrode facing the first electrode; 
 an emitting material layer between the first and second electrodes; and 
 an intervening layer between the emitting material layer and the second electrode and including a base material and an electron injection material, 
   wherein the intervening layer contacts the second electrode.   
     
     
         11 . The organic light emitting diode display device according to  claim 10 , wherein the base material is a host material of the emitting material layer. 
     
     
         12 . The organic light emitting diode display device according to  claim 11 , wherein the intervening layer has a LUMO energy level of about 3.0 eV to 2.6 eV and a triplet energy level of about 2.0 eV to about 2.5 eV. 
     
     
         13 . The organic light emitting diode display device according to  claim 11 , wherein the intervening layer has an electron mobility of about 10 −6  cm 2 /Vs to about 10 −4  cm 2 /Vs. 
     
     
         14 . The organic light emitting diode display device according to  claim 10 , wherein the base material is an electron transporting material. 
     
     
         15 . The organic light emitting diode display device according to  claim 14 , wherein the electron transporting material has a LUMO energy level of about 3.0 eV to 2.0 eV and the electron transporting layer has a triplet energy level of about 2.0 eV to about 2.5 eV. 
     
     
         16 . The organic light emitting diode display device according to  claim 14 , wherein the electron transporting material has an electron mobility of about 10 −5  cm 2 /Vs to about 10 −3  cm 2 /Vs. 
     
     
         17 . The organic light emitting diode display device according to  claim 10 , wherein the electron injection material has a first density in a lower portion, which is adjacent to the emitting material layer, of the intervening layer and a second density, which is larger than the first density, in an upper portion, which is adjacent to the second electrode, of the intervening layer. 
     
     
         18 . The organic light emitting diode display device according to  claim 10 , wherein the electron injection material includes an alkali metal. 
     
     
         19 . A method for manufacturing an organic emitting diode, comprising:
 forming a first electrode;   forming an emitting material layer on the first electrode;   forming an intervening layer including a base material and an electron injection material on the emitting material layer; and   forming a second electrode on the intervening layer to contact the intervening layer,   wherein the emitting material layer and the intervening layer are formed by solution process.   
     
     
         20 . The method according to  claim 19 , wherein the base material is a host material of the emitting material layer or an electron transporting material. 
     
     
         21 . The method according to  claim 20 , wherein the solution process includes an inject printing process, a nozzle printing process, a transferring process, a thermal jet printing process a roll printing process, a gravure printing process and a spin coating process. 
     
     
         22 . The method according to  claim 20 , wherein the emitting material layer is formed using an organic solvent; and the intervening layer is formed using a water-soluble material in which a water-soluble or fat soluble alkali metal as the electron injection material is dispersed. 
     
     
         23 . The method according to  claim 20 , wherein the emitting material layer is formed using a water-soluble material; and the intervening layer is formed using an organic solvent in which a water-soluble or fat soluble alkali metal as the electron injection material is dispersed.

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