Method of manufacturing silicon carbide substrate

Abstract

A method of manufacturing a silicon carbide substrate has the following steps. A silicon carbide source material is partially sublimated. After partially sublimating the silicon carbide source material, a seed substrate having a main surface is placed in a growth container. By sublimating the remainder of the silicon carbide source material in the growth container, a silicon carbide crystal grows on the main surface of the seed substrate. In this way, an increase of dislocations in the main surface of the seed substrate can be suppressed, thereby providing a method of manufacturing a silicon carbide substrate having few dislocations.

1 . A method of manufacturing a silicon carbide substrate, comprising the steps of:
 reducing a silicon carbide fine powder in a silicon carbide source material by immersing said silicon carbide source material in an acid and removing said silicon carbide fine powder floating on a surface of said acid;   partially sublimating said silicon carbide source material after the step of reducing a silicon carbide fine powder;   placing a seed substrate having a main surface in a growth container after the step of partially sublimating said silicon carbide source material; and   growing a silicon carbide crystal on said main surface of said seed substrate by sublimating a remainder of said silicon carbide source material in said growth container.   
     
     
         2 . The method of manufacturing a silicon carbide substrate according to  claim 1 , wherein
 the step of growing said silicon carbide crystal is performed without providing a mechanical process to the remainder of said silicon carbide source material, after the step of partially sublimating said silicon carbide source material.   
     
     
         3 . The method of manufacturing a silicon carbide substrate according to  claim 1 , wherein
 a value obtained by subtracting a second dislocation density just below said main surface of said seed substrate from a first dislocation density just above said main surface of said seed substrate is not more than 1×10 3  cm −2 .   
     
     
         4 . The method of manufacturing a silicon carbide substrate according to  claim 1 , wherein said acid includes a hydrochloric acid and an aqua regia. 
     
     
         5 . (canceled)