US2017152594A1PendingUtilityA1

Method for Manufacturing Light-Emitting Element and Deposition Apparatus

53
Assignee: SEMICONDUCTOR ENERGY LABPriority: May 4, 2012Filed: Feb 9, 2017Published: Jun 1, 2017
Est. expiryMay 4, 2032(~5.8 yrs left)· nominal 20-yr term from priority
Inventors:Kohei YokoyamaHisao IkedaShinichi HirasaYasuhiro JinboNatsuko Takase
H05B 33/10F21Y 2115/20C23C 14/564H01J 49/42F21S 6/002C23C 14/24A63F 13/327H01J 49/004C23C 14/54H10K 71/441H01L 51/001H01L 51/56H10K 71/164H10K 71/00
53
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

In order to provide a highly reliable organic EL element, a first step in which a deposition material is heated and vaporized in a deposition chamber in which the pressure is reduced and a second step in which a layer included in an EL layer is deposited in the deposition chamber are performed while exhaustion is performed and the partial pressure of water in the deposition chamber is measured with a mass spectrometer. Alternatively, the deposition chamber in the deposition apparatus includes a deposition material chamber and is connected to an exhaust mechanism. The deposition material chamber is separated from the deposition chamber by a sluice valve, includes a deposition material holding portion including a heating mechanism, and is connected to a mass spectrometer and an exhaust mechanism.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 - 16 . (canceled) 
     
     
         17 . A deposition apparatus comprising:
 a deposition chamber connected to a first exhaust mechanism and comprising a deposition material chamber in the deposition chamber,   wherein the deposition material chamber is connected to a first mass spectrometer and a second exhaust mechanism and comprises a sluice valve and a heating mechanism.   
     
     
         18 . The deposition apparatus according to  claim 17 , wherein the deposition apparatus is arranged so that an atmosphere in the deposition chamber can be different from that in the deposition material chamber. 
     
     
         19 . The deposition apparatus according to  claim 17 , wherein the deposition material chamber comprises a mechanism which heats an inner wall of the deposition material chamber. 
     
     
         20 . The deposition apparatus according to  claim 17 , wherein the deposition material chamber comprises a mechanism which cools an inner wall of the deposition material chamber. 
     
     
         21 . The deposition apparatus according to  claim 17 , wherein the deposition chamber comprises a mechanism which heats an inner wall of the deposition chamber. 
     
     
         22 . The deposition apparatus according to  claim 17 , wherein the deposition chamber comprises a mechanism which cools an inner wall of the deposition chamber. 
     
     
         23 . The deposition apparatus according to  claim 17 , wherein the first mass spectrometer is a quadrupole mass spectrometer. 
     
     
         24 . The deposition apparatus according to  claim 17 , wherein the deposition chamber is connected to a second mass spectrometer. 
     
     
         25 . The deposition apparatus according to  claim 24 , wherein the second mass spectrometer is a quadrupole mass spectrometer. 
     
     
         26 . A deposition apparatus comprising:
 a deposition chamber connected to a first exhaust mechanism and comprising a deposition material chamber in the deposition chamber,   wherein the deposition material chamber is connected to a first mass spectrometer and a second exhaust mechanism and comprises a sluice valve configured to separate the deposition material chamber from the deposition chamber and a heating mechanism.   
     
     
         27 . The deposition apparatus according to  claim 26 , wherein the deposition apparatus is arranged so that an atmosphere in the deposition chamber can be different from that in the deposition material chamber. 
     
     
         28 . The deposition apparatus according to  claim 26 , wherein the deposition material chamber comprises a mechanism which heats an inner wall of the deposition material chamber. 
     
     
         29 . The deposition apparatus according to  claim 26 , wherein the deposition material chamber comprises a mechanism which cools an inner wall of the deposition material chamber. 
     
     
         30 . The deposition apparatus according to  claim 26 , wherein the deposition chamber comprises a mechanism which heats an inner wall of the deposition chamber. 
     
     
         31 . The deposition apparatus according to  claim 26 , wherein the deposition chamber comprises a mechanism which cools an inner wall of the deposition chamber. 
     
     
         32 . The deposition apparatus according to  claim 26 , wherein the first mass spectrometer is a quadrupole mass spectrometer. 
     
     
         33 . The deposition apparatus according to  claim 26 , wherein the deposition chamber is connected to a second mass spectrometer. 
     
     
         34 . The deposition apparatus according to  claim 33 , wherein the second mass spectrometer is a quadrupole mass spectrometer.

Join the waitlist — get patent alerts

Track US2017152594A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.