Method And Device Of Purifying Hydrogen Fluoride In Semiconductor Process Waste Gas

Abstract

The invention relates to a method of purifying a fluoride in a semiconductor process waste gas. The method comprises the steps of importing a mist gaseous water at a high temperature produced by heating water in a reaction chamber of a semiconductor waste gas treating tank; and dissolving the fluoride into a hydrogen fluoride by using the mist gaseous water, wherein a dissolving temperature of the mist gaseous water contacting with the fluoride is 370˜1300° C. This invention provides a device of purifying a fluoride in a semiconductor process waste gas. The conventional problems saying that the steps and structure of the device of purifying the fluoride in the semiconductor process waste gas are too complex and a purifying efficiency is hard to be increased.

We claim: 
     
         1 . A method of purifying a fluoride in a semiconductor process waste gas comprising the steps of:
 importing a mist gaseous water at a high temperature produced by heating water in a reaction chamber of a semiconductor waste gas treating tank; and   dissolving the fluoride into a hydrogen fluoride by using the mist gaseous water, wherein a dissolving temperature of the mist gaseous water contacting with the fluoride is 370˜1300° C.   
     
     
         2 . The method of purifying a fluoride in the semiconductor process waste gas as claimed in  claim 1 , wherein the mist gaseous water is imported into the reaction chamber by spraying. 
     
     
         3 . The method of purifying a fluoride in the semiconductor process waste gas as claimed in  claim 1 , wherein when the fluoride is molecular fluorine (F 2 ), a reaction equation (I) is as follows: 
       
         
           
           
               
               
           
         
       
     
     
         4 . The method of purifying a fluoride in the semiconductor process waste gas as claimed in  claim 1 , wherein when the fluoride is nitrogen trifluoride (NF 3 ), a reaction equation (II) is as follows: 
       
         
           
           
               
               
           
         
       
     
     
         5 . A device of purifying a fluoride in a semiconductor process waste gas, comprising:
 a reaction chamber formed in a waste gas treating tank of semiconductor having at least one guide pipe of the semiconductor process waste gas for guiding and entering the semiconductor process waste gas comprising the fluoride into the reaction chamber; and   a heat pipe disposed in the waste gas treating tank and inserted into the reaction chamber, the heat pipe having an outside end formed at an outside of the waste gas treating tank and an inner end formed in the reaction chamber, a water injection pipe being disposed at the outside end, a plurality of spit-outs being disposed and formed at the inner end and passing through and arranged on a pipe wall of the heat pipe, wherein a heating rod is disposed in and passes through the heat pipe, a passage is formed between the heating rod and the heat pipe, the passage is fluidly connected to the water injection pipe and is fluidly connected to the reaction chamber via the plurality of spit-outs, water is guided and enters into the passage by the water injection pipe, the water in the passage contacts with the heating rod to produce a mist gaseous water at a high temperature, the mist gaseous water is guided and enters into the reaction chamber via the plurality of spit-outs to dissolve the fluoride to be reacted into a hydrogen fluoride, and a dissolving temperature of the mist gaseous water contacting with the fluoride is 370˜1300° C.   
     
     
         6 . The device of purifying the fluoride in the semiconductor process waste gas as claimed in  claim 5 , wherein the mist gaseous water is guided and enters into the reaction chamber via the plurality of spit-outs by spraying. 
     
     
         7 . The device of purifying the fluoride in the semiconductor process waste gas as claimed in  claim 6 , wherein the plurality of spit-outs pass through and extend through, and the plurality of spit-outs are disposed around a surrounding pipe wall of the heat pipe located at the inner end. 
     
     
         8 . The device of purifying the fluoride in the semiconductor process waste gas as claimed in  claim 5 , wherein a top cover is disposed at a top side of the semiconductor waste gas treating tank, and the guide pipe and the heat pipe of the semiconductor waste gas are spaced apart from each other and disposed at the top cover. 
     
     
         9 . The device of purifying the fluoride in the semiconductor process waste gas as claimed in  claim 5 , wherein the heat pipe, the passage and the heating rod are arranged in a concentric circle way of a straight line. 
     
     
         10 . The device of purifying the fluoride in the semiconductor process waste gas as claimed in  claim 5 , wherein a ring heater used as a tank wall of the waste gas treating tank is disposed at a periphery of the reaction chamber, and the dissolving temperature reaches when the ring heater is heating. 
     
     
         11 . The device of purifying the fluoride in the semiconductor process waste gas as claimed in  claim 5 , wherein a plurality of reaction tanks are formed in the reaction chamber by using a plurality of separator plates to separate, at least one holes fluidly connected to the plurality of reaction tanks are respectively formed on the plurality of separator plates, the plurality of reaction tanks are fluidly connected each other via the holes to form an air duct channel, and the air duct channel is used for guiding the waste gas and the mist gaseous water to move through the reaction chamber. 
     
     
         12 . The device of purifying the fluoride in the semiconductor process waste gas as claimed in  claim 11 , wherein the holes respectively formed on the plurality of separator plates are correspondent to each other located at a first to fourth quadrants in a X-/Y-coordinate plane in a staggered way so that the air duct channel is in a spiral form. 
     
     
         13 . The device of purifying the fluoride in the semiconductor process waste gas as claimed in  claim 11 , wherein partition walls are disposed between the plurality of separator plates.