Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities

Abstract

An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the first epitaxial layer.

What is claimed is: 
     
         1 . An epitaxial structure, comprises:
 a substrate;   a first epitaxial layer disposed over the substrate and comprising a portion of a plurality of stepped air voids and an opening over each said portion of the stepped air voids; and   a second epitaxial layer disposed on the first epitaxial layer and collectively defining the stepped air voids with the first epitaxial layer.   
     
     
         2 . The epitaxial structure according to  claim 1 , wherein the stepped air voids have at least a pair of steps protruding inwardly. 
     
     
         3 . The epitaxial structure according to  claim 1 , wherein each of the stepped air voids has a first width and a second width respectively at a top and a bottom thereof, and the first width of the top is less than the second width of the bottom. 
     
     
         4 . The epitaxial structure according to  claim 1 , wherein the second epitaxial layer is substantially planar. 
     
     
         5 . The epitaxial structure according to  claim 1 , further comprising a buffer layer disposed on the substrate. 
     
     
         6 . The epitaxial structure according to  claim 5 , wherein a top surface of the buffer layer forms a bottom portion of the stepped closed air void. 
     
     
         7 . The epitaxial structure according to  claim 1 , further comprises a patterned sacrifice layer disposed on the substrate, and a top surface of the patterned sacrifice layer forms a bottom portion of the stepped closed air void. 
     
     
         8 . The epitaxial structure according to  claim 1 , wherein and bottom portion of each stepped, air void is a substantially flat surface. 
     
     
         9 . The epitaxial structure according to  claim 1 , wherein each stepped air void has a height of about 0.5 μm to about 3 μm, and a bottom portion of each stepped air void has a width of about 0.5 μm to about 5 μm.