Schottky barrier diode and apparatus using the same

Abstract

A Schottky barrier diode includes a first semiconductor layer, a LOCOS layer arranged in contact with the first semiconductor layer, a Schottky junction region provided on a contact surface between the first semiconductor layer and a first electrode, a second semiconductor layer connected to the first semiconductor layer and having a higher carrier concentration than that of the first semiconductor layer, and a second electrode forming an ohmic contact with the second semiconductor layer. In this case, the Schottky junction region and the LOCOS layer are in contact.

What is claimed is: 
     
         1 . A Schottky barrier diode comprising:
 a semiconductor;   a Schottky electrode which is Schottky-contacted with the semiconductor;   an ohmic electrode which is ohmic-contacted with the semiconductor; and   a LOCOS layer which is arranged in contact with the semiconductor, between a Schottky junction region where the Schottky electrode is Schottky-contacted with the semiconductor and an ohmic junction region where the ohmic electrode is ohmic-contacted with the semiconductor,   wherein the Schottky junction region and the ohmic junction region are arranged at different positions in a direction in which the semiconductor is in line with the LOCOS layer.   
     
     
         2 . The Schottky barrier diode according to  claim 1 , wherein the Schottky junction region is arranged at a position higher than the ohmic junction region. 
     
     
         3 . The Schottky barrier diode according to  claim 1 , wherein the LOCOS layer is arranged so as to surround the Schottky junction region. 
     
     
         4 . The Schottky barrier diode according to  claim 1 , wherein the LOCOS layer is in contact with a circumference of the Schottky junction region. 
     
     
         5 . The Schottky barrier diode according to  claim 1 , wherein a part of the Schottky electrode is arranged on an upper part of the LOCOS layer. 
     
     
         6 . The Schottky barrier diode according to  claim 1 , wherein a part of the ohmic electrode is arranged on an upper part of the LOCOS layer. 
     
     
         7 . The Schottky barrier diode according to  claim 1 , wherein the semiconductor comprises a first semiconductor which is Schottky-connected with the first electrode and a second semiconductor which is ohmic-connected with the second electrode. 
     
     
         8 . A Schottky barrier diode comprising:
 a substrate;   a semiconductor arranged on the substrate;   a Schottky electrode arranged on the semiconductor and Schottky-connected to the semiconductor;   an ohmic electrode arranged on the semiconductor and ohmic-connected to the semiconductor; and   a LOCOS layer arranged in contact with the semiconductor, between a Schottky junction region and an ohmic junction region of the semiconductor,   wherein the Schottky junction region and the ohmic junction region are arranged at different positions in a direction perpendicular to a substrate face of the substrate.   
     
     
         9 . The Schottky barrier diode according to  claim 8 , wherein the Schottky junction region is arranged at a position apart from the substrate face than the ohmic junction region in the direction perpendicular to the substrate face of the semiconductor. 
     
     
         10 . A detecting device comprising:
 the Schottky barrier diode according to  claim 1 ; and   an antenna.   
     
     
         11 . A detecting device comprising:
 the Schottky barrier diode according to  claim 1 ; and   a transistor.   
     
     
         12 . A Schottky barrier diode manufacturing method, comprising:
 forming a pattern layer on a semiconductor;   forming a LOCOS layer around the pattern layer by thermal oxidation;   removing the pattern layer to expose a surface of the semiconductor;   forming a first electrode to form a Schottky junction with the surface of the semiconductor, the first electrode being in contact with the LOCOS layer and covering a part of the LOCOS layer; and   forming a second electrode to form an ohmic junction with the surface of the semiconductor,   wherein in the forming the second electrode, the second electrode is formed in such a manner that the surface of the semiconductor and the second electrode are ohmic-contacted at a position different from a region where the Schottky junction, in a direction in which the semiconductor is in line with the LOCOS layer.   
     
     
         13 . The Schottky barrier diode manufacturing method according to  claim 12 , wherein in the forming the second electrode, the second electrode is formed in such a manner that the surface of the semiconductor and the second electrode are ohmic-connected at a position lower than the region where the Schottky junction is formed with the first electrode, in the direction in which the semiconductor is in line with the LOCOS layer. 
     
     
         14 . A Schottky barrier diode comprising:
 a semiconductor;   a Schottky electrode which is Schottky-connected to the semiconductor;   an ohmic electrode which is ohmic-connected to the semiconductor; and   an insulating layer which is arranged in contact with the semiconductor, between a Schottky junction region where the Schottky electrode is Schottky-contacted with the semiconductor and an ohmic junction region where the ohmic electrode is ohmic-contacted with the semiconductor,   wherein the Schottky junction region and the ohmic junction region are arranged at different positions in a direction in which the semiconductor is in line with the LOCOS layer.   
     
     
         15 . The Schottky barrier diode according to  claim 13 , wherein the Schottky junction region is arranged at a position higher than the ohmic junction region in the direction in which the semiconductor is in line with the LOCOS layer. 
     
     
         16 . The Schottky barrier diode according to  claim 13 , wherein the insulating layer is arranged to surround the Schottky junction region. 
     
     
         17 . The Schottky barrier diode according to  claim 13 , wherein the insulating layer is in contact with a circumference of the Schottky junction region.