Oxide semiconductor substrate and schottky barrier diode

Abstract

A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.

1 . A Schottky barrier diode element comprising an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer comprising either or both of a polycrystalline oxide that comprises gallium (Ga) as a main component and an amorphous oxide that comprises gallium (Ga) as a main component. 
     
     
         2 . A Schottky barrier diode element comprising an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer comprising a polycrystalline oxide that comprises gallium (Ga) as a main component. 
     
     
         3 . The Schottky barrier diode element according to  claim 1 , wherein the oxide semiconductor layer comprises gallium at an atomic percentage ([Ga]/([Ga]+[total metal elements other than Ga])×100) of 90 to 100 at %. 
     
     
         4 . The Schottky barrier diode element according to  claim 1 , wherein the oxide semiconductor layer is formed on the silicon substrate, and the Schottky electrode layer is formed on the oxide semiconductor layer. 
     
     
         5 . The Schottky barrier diode element according to  claim 1 , wherein the Schottky electrode layer is formed on the silicon substrate, and the oxide semiconductor layer is formed on the Schottky electrode layer. 
     
     
         6 . The Schottky barrier diode element according to  claim 1 , wherein the oxide semiconductor layer comprises at least one element selected from Si, Ge, Sn, Ti, Zr, and Hf in a ratio of 0.01 at % to 10 at % based on total metal elements included in the oxide semiconductor layer. 
     
     
         7 . The Schottky barrier diode element according to  claim 1 , wherein the oxide semiconductor layer has a carrier concentration of 1×10 14  cm −3  or more and 1×10 17  cm −3  or less at room temperature. 
     
     
         8 . The Schottky barrier diode element according to  claim 1 , wherein the Schottky electrode layer is a metal thin film having a work function of 4.7 eV or more. 
     
     
         9 . The Schottky barrier diode element according to  claim 1 , wherein the oxide semiconductor layer is covered with an insulating film so that an edge of the oxide semiconductor layer is not exposed. 
     
     
         10 . An electric circuit comprising the Schottky barrier diode element according to  claim 1 . 
     
     
         11 . An electric apparatus comprising the Schottky barrier diode element according to  claim 1 . 
     
     
         12 . An electronic apparatus comprising the Schottky barrier diode element according to  claim 1 . 
     
     
         13 . A vehicle comprising the Schottky barrier diode element according to  claim 1 . 
     
     
         14 . A structure comprising a metal thin film having a work function of 4.7 eV or more, and an oxide semiconductor that comprises Ga as a main component, the structure having a region in which the metal thin film and the oxide semiconductor electrically contact with each other. 
     
     
         15 . The structure according to  claim 14 , wherein the oxide semiconductor that comprises Ga as a main component comprises at least one element selected from Si, Ge, Sn, and Ti in a ratio of 0.01 at % or more and 10 at % or less based on total metal elements included in the oxide semiconductor. 
     
     
         16 . The structure according to  claim 14 , wherein the oxide semiconductor comprises gallium at an atomic percentage ([Ga]/([Ga]+[total metal elements other than Ga])×100) of 90 to 100 at %. 
     
     
         17 . The structure according to  claim 14 , wherein the oxide semiconductor has a carrier concentration of 1×10 14  cm −3  or more and 1×10 17  cm −3  or less at room temperature. 
     
     
         18 . The structure according to  claim 14 , wherein the oxide semiconductor has a thickness of 50 nm to 20 μm. 
     
     
         19 . The structure according to  claim 14 , wherein the metal thin film is formed of Au, Cr, Cu, Fe, Ir, Mo, Nb, Ni, Pd, Pt, Re, Ru, W, In 2 O 3 , In—Sn—O, or In—Zn—O. 
     
     
         20 . An oxide semiconductor substrate comprising a conductive substrate, and the structure according to  claim 14  that is stacked on the conductive substrate. 
     
     
         21 . The oxide semiconductor substrate according to  claim 20 , wherein the conductive substrate is formed of one or more materials selected from monocrystalline silicon, polycrystalline silicon, and microcrystalline silicon. 
     
     
         22 . An oxide semiconductor substrate comprising an insulating substrate, and the structure according to  claim 14  that is stacked on the insulating substrate. 
     
     
         23 . A power semiconductor element wherein the oxide semiconductor substrate according to  claim 20  is used. 
     
     
         24 . A diode element wherein the oxide semiconductor substrate according to  claim 20  is used. 
     
     
         25 . A Schottky barrier diode element wherein the oxide semiconductor substrate according to  claim 20  is used. 
     
     
         26 . A Schottky barrier diode element comprising the oxide semiconductor substrate according to  claim 20 , the oxide semiconductor that comprises Ga as a main component being an oxide semiconductor layer, and the metal thin film having a work function of 4.7 eV or more being a Schottky electrode layer. 
     
     
         27 . An electric circuit comprising one or more elements selected from a group consisting of:
 (a) a power semiconductor element wherein an oxide semiconductor substrate is used,   said oxide semiconductor substrate comprising a conductive substrate, and a structure that is stacked on the conductive substrate,   said structure comprising a metal thin film having a work function of 4.7 eV or more, and an oxide semiconductor that comprises Ga as a main component,   said structure having a region in which the metal thin film and the oxide semiconductor electrically contact with each other;   (b) a diode element wherein an oxide semiconductor substrate is used,   said oxide semiconductor substrate comprising an insulating substrate, and a structure that is stacked on the insulating substrate,   said structure comprising a metal thin film having a work function of 4.7 eV or more, and an oxide semiconductor that comprises Ga as a main component,   said structure having a region in which the metal thin film and the oxide semiconductor electrically contact with each other; and   (c) the Schottky barrier diode element according to  claim 25 .   
     
     
         28 . An electric apparatus comprising the electric circuit according to  claim 27 . 
     
     
         29 . An electronic apparatus comprising the electric circuit according to  claim 27 . 
     
     
         30 . A vehicle comprising the electric circuit according to  claim 27 .