Semiconductor module comprising an encapsulating compound that covers at least one semiconductor component

Abstract

A semiconductor module ( 10 ) contains a ceramic interconnect device ( 50 ) having at least one semiconductor component ( 20 ). The at least one semiconductor component ( 20 ) is covered by an encapsulating compound ( 30 ) which contains a cured inorganic cement and has a thermal expansion coefficient in the range of 2 to 10 ppm/K. The ceramic of the ceramic interconnect device ( 50 ) is selected from ceramics based on aluminum oxide, aluminum nitride or silicon nitride.

1 .- 12 . (canceled) 
     
     
         13 . A semiconductor module comprising a ceramic interconnect device having at least one semiconductor component, wherein the at least one semiconductor component is covered by an encapsulating compound comprising a cured inorganic cement and having a thermal expansion coefficient in the range of 2 to 10 ppm/K, and wherein the ceramic of the ceramic interconnect device is selected from the group consisting of ceramics based on aluminum oxide, aluminum nitride, and silicon nitride. 
     
     
         14 . The semiconductor module according to  claim 13 , wherein the encapsulating compound comprises a cured inorganic cement. 
     
     
         15 . The semiconductor module according to  claim 14 , wherein the cured inorganic cement is formed by mixing a powdered mixture of inorganic binding agent and inorganic additives with water to form a pourable mass, pouring the pourable mass, and setting and drying the poured mass. 
     
     
         16 . The semiconductor module according to  claim 15 , wherein the powdered mixture of inorganic binding agent and inorganic additives is a phosphate cement. 
     
     
         17 . The semiconductor module according to  claim 16 , wherein the phosphate cement is a magnesium phosphate cement. 
     
     
         18 . The semiconductor module according to  claim 13 , wherein the encapsulating compound is provided as “glob-top.” 
     
     
         19 . The semiconductor module according to  claim 13 , further comprising contacting elements connected to the semiconductor component, wherein the encapsulating compound partially or fully encapsulates the contacting elements. 
     
     
         20 . The semiconductor module according to  claim 13 , wherein the encapsulating compound comprises aluminum nitride particles, boron nitride particles, aluminum oxide particles and/or silicon nitride particles at a total volume fraction of 25 to 90% by volume, relative to the volume of the encapsulating compound. 
     
     
         21 . The semiconductor module according to  claim 13 , wherein the encapsulating compound comprises one or more different types of fibers. 
     
     
         22 . The semiconductor module according to  claim 13 , further comprising at least one cooling element that is physically connected to the encapsulating compound. 
     
     
         23 . The semiconductor module according to  claim 22 , wherein the cooling element is an air-cooled or a liquid-cooled cooling element. 
     
     
         24 . The semiconductor module according to  claim 13 , wherein the semiconductor module is a power electronics sub-assembly.