Storage device and storage unit

Abstract

There are provided a storage device and a storage unit capable of improving retention performance of an intermediate resistance value in writing at a low current, and a storage device and a storage unit capable of reducing random telegraph noise. A storage device of one embodiment of the present technology includes a first electrode, a storage layer, and a second electrode in this order, and the storage layer includes: an ion source layer including one or more kinds of chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or more kinds of transition metal elements selected from Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table; and a resistance change layer including boron (B) and oxygen (O). A storage device of another embodiment of the present technology includes the above-described ion source layer and a resistance change layer including one or more kinds of transaction metal elements selected from Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table, and oxygen (O).

1 . A memory device, comprising:
 a first electrode;   a storage layer; and   a second electrode,   wherein the storage layer is configured to include an ion source layer and a resistance change layer, the resistance change layer includes boron (B) and oxygen (O).   
     
     
         2 . The memory device according to  claim 1 , wherein a part or a whole of the boron (B) included in the resistance change layer is bonded to the oxygen (O). 
     
     
         3 . The memory device according to  claim 1 , wherein the resistance change layer includes, as an additive element, one or more of the additive element selected from tungsten (W), hafnium (Hf), carbon (C), silicon (Si), tantalum (Ta), magnesium (Mg), copper (Cu), nickel (Ni), zirconium (Zr), or gadolinium (Gd). 
     
     
         4 . The memory device according to  claim 3 , wherein content (a composition ratio of B/a total composition ratio of B and the additive element) of the boron (B) included in the resistance change layer is 30% or more. 
     
     
         5 . The memory device according to  claim 3 , wherein the resistance change layer has a laminate configuration including a first resistance change layer and a second resistance change layer, the first resistance change layer including boron (B), and the second resistance change layer including the one or more of the additive elements in the form of oxide or nitride. 
     
     
         6 . The memory device according to  claim 5 , wherein the first resistance change layer includes oxygen (O). 
     
     
         7 . The memory device according to  claim 5 , wherein the first resistance change layer and the second resistance change layer are laminated in an order from the first electrode side. 
     
     
         8 . The memory device according to  claim 5 , wherein the second resistance change layer and the first resistance change layer are laminated in an order from the first electrode side. 
     
     
         9 . The memory device according to  claim 1 , wherein the ion source layer includes one or more of chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or more of transition metal elements selected from Group 4 elements, Group 5 elements, or Group 6 elements of a periodic table. 
     
     
         10 . The memory device according to  claim 1 , wherein the ion source layer includes oxygen (O) or nitrogen (N). 
     
     
         11 . A memory system, comprising:
 a plurality of memory cells;   a driving section configured to be connected to the plurality of memory cells via lines; and   a control section configured to control the driving section,   wherein each of the plurality of memory cells is configured to include:
 a first electrode; 
 a storage layer; and 
 a second electrode, 
 wherein the storage layer is configured to include an ion source layer and a resistance change layer, the resistance change layer including boron (B) and oxygen (O). 
   
     
     
         12 . The memory system according to  claim 11 , wherein at least a part of the boron (B) included in the resistance change layer is bonded to the oxygen (O). 
     
     
         13 . The memory system according to  claim 11 , wherein the resistance change layer includes, as an additive element, one or more of the additive element selected from tungsten (W), hafnium (Hf), carbon (C), silicon (Si), tantalum (Ta), magnesium (Mg), copper (Cu), nickel (Ni), zirconium (Zr), or gadolinium (Gd). 
     
     
         14 . The memory system according to  claim 13 , wherein content (a composition ratio of B/a total composition ratio of B and the additive element) of the boron (B) included in the resistance change layer is 30% or more. 
     
     
         15 . The memory system according to  claim 13 , wherein the resistance change layer has a laminate configuration including a first resistance change layer and a second resistance change layer, the first resistance change layer including boron (B), and the second resistance change layer including the one or more of the additive elements in the form of oxide or nitride. 
     
     
         16 . The memory system according to  claim 15 , wherein the first resistance change layer includes oxygen (O). 
     
     
         17 . The memory system according to  claim 15 , wherein the first resistance change layer and the second resistance change layer are laminated in an order from the first electrode side. 
     
     
         18 . The memory system according to  claim 15 , wherein the second resistance change layer and the first resistance change layer are laminated in an order from the first electrode side. 
     
     
         19 . The memory system according to  claim 11 , wherein the ion source layer includes one or more of chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or more of transition metal elements selected from Group 4 elements, Group 5 elements, or Group 6 elements of a periodic table. 
     
     
         20 . The memory system according to  claim 11 , wherein the ion source layer includes oxygen (O) or nitrogen (N).