Dual silicide liner flow for enabling low contact resistance

Abstract

A method for fabricating a semiconductor device includes depositing a sacrificial liner in self-aligned contact openings in first and second regions. The openings are filled with a sacrificial material. The second region is blocked with a first mask to remove the sacrificial material from the first region. The first mask is removed from the second region, and the sacrificial liner is removed from the first region. A first liner is formed in the openings of the first region, and first contacts are formed in the first region on the first liner. The first region is blocked with a second mask to remove the sacrificial material from the second region. The second mask is removed from the first region, and the sacrificial liner is removed from the second region. A second liner is formed in the openings of the second region, and second contacts are formed in the second region.

1 . A semiconductor device, comprising:
 a first region including n-type field effect transistors (NFETs);   a second region including p-type field effect transistors (PFETs);   a first liner formed in the self-aligned contact openings of the NFETs;   first contacts formed in the self-aligned contact openings of the NFETs on the first liner;   a second liner formed in the self-aligned contact openings of the PFETs; and   second contacts formed in the self-aligned contact openings of the PFETs on the second liner, wherein the self-aligned contact openings include only one liner in the first region and only one liner in the second region and the first liner and the second liner include different materials.   
     
     
         2 . The device as recited in  claim 1 , wherein the first liner includes Ti. 
     
     
         3 . The device as recited in  claim 1 , wherein the first liner includes TiN 
     
     
         4 . The device as recited in  claim 1 , wherein the second liner includes Pt. 
     
     
         5 . The device as recited in  claim 1 , wherein the second liner includes Ni. 
     
     
         6 . The device as recited in  claim 1 , wherein the second liner includes a combination of Ni and Pt. 
     
     
         7 . The device as recited in  claim 1 , wherein the first contacts and the second contacts include different materials. 
     
     
         8 . The device as recited in  claim 1 , wherein the first liner and the second liner form silicides with underlying regions. 
     
     
         9 . The device as recited in  claim 1 , wherein the first contacts are self-aligned contacts. 
     
     
         10 . The device as recited in  claim 1 , wherein the second contacts are self-aligned contacts.