Anisotropic material damage process for etching low-k dielectric materials

Abstract

A device includes a first dielectric material and a plurality of conductive lines disposed in the first dielectric material. Each of the plurality of conductive lines includes a conductive fill material and a liner layer disposed between at least a bottom surface of the conductive fill material and the first dielectric material. The first dielectric material defines at least one air gap between two of the plurality of conductive lines. The at least one air gap has a first depth greater than a second depth of the plurality of conductive lines.

What is claimed: 
     
         1 . A device, comprising:
 a first dielectric material; and   a plurality of conductive lines disposed in said first dielectric material, wherein said plurality of conductive lines each comprises a conductive fill material and a liner layer disposed between at least a bottom surface of said conductive fill material and said first dielectric material, said first dielectric material defines at least one air gap between two of said plurality of conductive lines, and said at least one air gap has a first depth greater than a second depth of said plurality of conductive lines.   
     
     
         2 . The device of  claim 1 , further comprising a first cap layer disposed above said conductive lines. 
     
     
         3 . The device of  claim 2 , further comprising a second dielectric layer disposed above said first cap layer. 
     
     
         4 . The device of  claim 2 , further comprising a second cap layer disposed above said conductive fill material and in an upper portion of said at least one air gap. 
     
     
         5 . The device of  claim 4 , wherein said second cap layer comprises aluminum nitride. 
     
     
         6 . The device of  claim 4 , wherein said second cap layer comprises cobalt. 
     
     
         7 . The device of  claim 4 , wherein said first cap layer covers edges of said liner layer. 
     
     
         8 . The device of  claim 4 , wherein said second cap layer lines said at least one air gap. 
     
     
         9 . The device of  claim 1 , wherein said plurality of conductive lines comprise copper. 
     
     
         10 . A device, comprising:
 a first dielectric material;   a plurality of conductive lines disposed in said first dielectric material, wherein said plurality of conductive lines each comprises a liner layer disposed between at least a bottom surface of a conductive fill material and said first dielectric material;   a first cap layer disposed above said plurality of conductive lines, wherein said first cap layer covers top surfaces of said conductive fill material and edges of said liner layer, said first dielectric material defines at least one air gap between two of said plurality of conductive lines, and said at least one air gap has a first depth greater than a second depth of said plurality of conductive lines; and   a second cap layer disposed above said plurality of conductive lines and in an upper portion of said at least one air gap.   
     
     
         11 . The device of  claim 10 , wherein said second cap layer comprises aluminum nitride. 
     
     
         12 . The device of  claim 10 , wherein said second cap layer comprises cobalt. 
     
     
         13 . The device of  claim 10 , wherein said second cap layer lines said at least one air gap. 
     
     
         14 . The device of  claim 10 , wherein said plurality of conductive lines comprise copper. 
     
     
         15 . A device, comprising:
 a first dielectric material;   a plurality of conductive lines disposed in said first dielectric material, wherein each of said plurality of conductive lines comprises a conductive fill material and a liner layer disposed between at least a bottom surface of said conductive fill material and said first dielectric material, said first dielectric material defines at least one air gap between two of said plurality of conductive lines, and said at least one air gap has a first depth greater than a second depth of said plurality of conductive lines; and   a first cap layer lining said at least one air gap.   
     
     
         16 . The device of  claim 15 , further comprising a second cap layer disposed above said plurality of conductive lines, wherein a portion of said first cap layer is disposed above a portion of said second cap layer. 
     
     
         17 . The device of  claim 16 , wherein said second cap layer covers edges of said liner layer. 
     
     
         18 . The device of  claim 15 , wherein said first cap layer comprises aluminum nitride. 
     
     
         19 . The device of  claim 15 , wherein said first cap layer comprises cobalt. 
     
     
         20 . The device of  claim 15 , wherein said plurality of conductive lines comprise copper.