Vapor deposition apparatus

Abstract

A vapor deposition apparatus for forming a deposition layer on a substrate includes a supply unit that is supplied with a first raw gas to form the deposition layer and an auxiliary gas, wherein the auxiliary gas does not constitute a raw material to form the deposition layer, a reaction space that is connected to the supply unit to be supplied with the first raw gas and the auxiliary gas, a plasma generator in the reaction space to convert at least a portion of the first raw gas into a radical form, and a first injection portion that is connected to the reaction space and that supplies at least a radical material of the first raw gas toward the substrate.

1 . A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus comprising:
 a supply unit that is supplied with a first raw gas to form the deposition layer and with an auxiliary gas;   a reaction space that is connected to the supply unit to be supplied with the first raw gas and the auxiliary gas;   a plasma generator in the reaction space to convert at least a portion of the first raw gas into a radical form; and   a first injection portion that is connected to the reaction space and that supplies at least a radical material of the first raw gas toward the substrate.   
     
     
         2 . The vapor deposition apparatus as claimed in  claim 1 , wherein the auxiliary gas includes He or Ne. 
     
     
         3 . The vapor deposition apparatus as claimed in  claim 1 , wherein the plasma generator has an electrode form. 
     
     
         4 . The vapor deposition apparatus as claimed in  claim 1 , wherein the plasma generator has a pillar shape. 
     
     
         5 . The vapor deposition apparatus as claimed in  claim 1 , wherein a connecting passage is between the reaction space and the first injection portion, the connecting passage having a narrower width than the reaction space and the first injection portion. 
     
     
         6 . The vapor deposition apparatus as claimed in  claim 1 , wherein the substrate and the vapor deposition apparatus are movable relative to each other. 
     
     
         7 . The vapor deposition apparatus as claimed in  claim 1 , further comprising a second injection portion that is adjacent to and spaced apart from the first injection portion. 
     
     
         8 . The vapor deposition apparatus as claimed in  claim 7 , wherein the second injection portion injects a second raw material toward the substrate to form another deposition layer. 
     
     
         9 . The vapor deposition apparatus as claimed in  claim 7 , further comprising a plurality of purge portions between the first and second injection portions and adjacent to the first and second injection portions. 
     
     
         10 . The vapor deposition apparatus as claimed in  claim 9 , wherein the purge portions supply a purge gas including an inactive gas toward the substrate. 
     
     
         11 . The vapor deposition apparatus as claimed in  claim 10 , wherein the purge gas includes He or Ne. 
     
     
         12 . The vapor deposition apparatus as claimed in  claim 9 , further comprising a plurality of exhaust portions adjacent to the first injection portion, the second injection portion, and the purge portions. 
     
     
         13 . The vapor deposition apparatus as claimed in  claim 12 , wherein the plurality of exhaust portions are between the first injection portion and the purge portions and between the second injection portion and the purge portions. 
     
     
         14 .- 20 . (canceled)