US2017117335A1PendingUtilityA1

Method and apparatus for detecting infrared radiation with gain

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Assignee: UNIV FLORIDAPriority: Jun 30, 2011Filed: Jan 3, 2017Published: Apr 27, 2017
Est. expiryJun 30, 2031(~4.9 yrs left)· nominal 20-yr term from priority
Inventors:Franky SoDo-Young KimJae Woong LeeBhabendra K. Pradhan
Y02E10/549H10K 59/60H10F 77/1433H01L 27/3227H01L 2031/0344H01L 27/288H10F 77/254H10F 77/247H10F 77/244H10F 71/1212H10F 71/127H10F 71/121H10F 55/165H10F 30/10H10K 30/10H10K 71/00H10K 65/00H10K 85/631H10K 85/215H10K 50/14H10K 30/82H10K 85/341H10K 30/15H10K 85/311H10K 39/00
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Claims

Abstract

Photodetectors, methods of fabricating the same, and methods using the same to detect radiation are described. A photodetector can include a first electrode, a light sensitizing layer, an electron blocking/tunnelling layer, and a second electrode. Infrared-to-visible upconversion devices, methods of fabricating the same, and methods using the same to detect radiation are also described. An Infrared-to-visible upconversion device can include a photodetector and an OLDE coupled to the photodetector.

Claims

exact text as granted — not AI-modified
1 . A photodetector with gain, comprising:
 a first electrode;   a light sensitizing layer on the first electrode;   an electron blocking/tunneling layer on the light sensitizing layer; and   a second electrode on the electron blocking/tunneling layer.   
     
     
         2 . The photodetector with gain according to  claim 1 , wherein the light sensitizing layer is sensitive to photons having a wavelength in a range of from 0.7 μm to 14 μm, inclusive. 
     
     
         3 . The photodetector with gain according to  claim 2 , wherein the light sensitizing layer is insensitive to photons having a wavelength of at least 0.4 μm and less than 0.7 μm. 
     
     
         4 . The photodetector with gain according to  claim 1 , wherein the light sensitizing layer comprises PbS quantum dots or PbSe quantum dots. 
     
     
         5 . The photodetector with gain according to  claim 1 , wherein the light sensitizing layer comprises PbS quantum dots. 
     
     
         6 . The photodetector with gain according to  claim 1 , wherein the light sensitizing layer comprises at least one material selected from the group consisting of PbS quantum dots, PbSe quantum dots, PCTDA, SnPc, SnPc:C60, AlPcCl, AlPcCl:C60, TiOPc, TiOPc:C60, PbSe, PbS, InAs, InGaAs, Si, Ge, and GaAs. 
     
     
         7 . The photodetector with gain according to  claim 1 , wherein the first electrode comprises at least one material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsCO 3 /ITO. 
     
     
         8 . The photodetector with gain according to  claim 1 , wherein the second electrode comprises at least one material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsCO 3 /ITO. 
     
     
         9 . The photodetector with gain according to  claim 1 , wherein the first electrode is an anode, and wherein the second electrode is a cathode. 
     
     
         10 . The photodetector with gain according to  claim 9 , wherein the first electrode comprises at least one material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsCO 3 /ITO; and wherein the second electrode comprises at least one material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsCO 3 /ITO. 
     
     
         11 . The photodetector with gain according to  claim 1 , wherein the electron blocking/tunneling layer is a 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC)/MoO 3  stack layer. 
     
     
         12 . The photodetector with gain according to  claim 11 , wherein the TAPC layer is in direct contact with the light sensitizing layer, and wherein the MoO 3  layer is in direct contact with the second electrode. 
     
     
         13 . The photodetector with gain according to  claim 11 , wherein the TAPC layer has a thickness of no more than 100 nm, and wherein the MoO 3  layer has a thickness of no more than 100 nm. 
     
     
         14 . The photodetector with gain according to  claim 1 , further comprising a hole blocking layer on the first electrode and under the light sensitizing layer. 
     
     
         15 . The photodetector with gain according to  claim 14 , wherein the hole blocking layer comprises at least one material selected from the group consisting of ZnO, naphthalene tetracarboxylic anhydride (NTCDA), 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), p-bis(triphenylsilyl)benzene (UGH2), 4,7-diphenyl-1,10-phenanthroline (BPhen), tris-(8-hydroxy quinoline) aluminum (Alq3), 3,5′-N,N′-dicarbazole-benzene (mCP), C60, tris[3-(3-pyridyl)-mesityl]borane (3TPYMB), and TiO 2 . 
     
     
         16 . The photodetector with gain according to  claim 1 , further comprising a glass substrate under the first electrode. 
     
     
         17 . The photodetector with gain according to  claim 1 ,
 wherein the electron blocking/tunneling layer is a TAPC/MoO 3  stack layer,   wherein the TAPC layer is in direct contact with the light sensitizing layer,   wherein the MoO 3  layer is in direct contact with the second electrode, and   wherein the light sensitizing layer comprises PbS quantum dots.   
     
     
         18 . The photodetector with gain according to  claim 17 , further comprising a hole blocking layer on the first electrode and under the light sensitizing layer. 
     
     
         19 . A method of fabricating a photodetector with gain, comprising:
 forming a first electrode;   forming a light sensitizing layer on the first electrode;   forming an electron blocking/tunneling layer on the light sensitizing layer; and   forming a second electrode on the electron blocking/tunneling layer.   
     
     
         20 . The method according to  claim 19 , wherein the light sensitizing layer is sensitive to photons having a wavelength in a range of from 0.7 μm to 14 μm, inclusive. 
     
     
         21 . The method according to  claim 20 , wherein the light sensitizing layer is insensitive to photons having a wavelength of at least 0.4 μm and less than 0.7 μm. 
     
     
         22 . The method according to  claim 19 , wherein the light sensitizing layer comprises PbS quantum dots or PbSe quantum dots. 
     
     
         23 . The method according to  claim 19 , wherein the light sensitizing layer comprises PbS quantum dots. 
     
     
         24 . The method according to  claim 19 , wherein the light sensitizing layer comprises at least one material selected from the group consisting of PbS quantum dots, PbSe quantum dots, PCTDA, SnPc, SnPc:C60, AlPcCl, AlPcCl:C60, TiOPc, TiOPc:C60, PbSe, PbS, InAs, InGaAs, Si, Ge, and GaAs. 
     
     
         25 . The method according to  claim 19 , wherein the first electrode comprises at least one material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsCO 3 /ITO. 
     
     
         26 . The method according to  claim 19 , wherein the second electrode comprises at least one material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsCO 3 /ITO. 
     
     
         27 . The method according to  claim 19 , wherein the first electrode is an anode, and wherein the second electrode is a cathode. 
     
     
         28 . The method according to  claim 27 , wherein the first electrode comprises at least one material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsCO 3 /ITO; and wherein the second electrode comprises at least one material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsCO 3 /ITO. 
     
     
         29 . The method according to  claim 19 , wherein forming the electron blocking/tunneling layer comprises forming a TAPC/MoO 3  stack layer. 
     
     
         30 . The method according to  claim 29 , wherein the TAPC layer is formed in direct contact with the light sensitizing layer, and wherein the second electrode is formed in direct contact with the MoO 3  layer. 
     
     
         31 . The method according to  claim 29 , wherein the TAPC layer has a thickness of no more than 100 nm, and wherein the MoO 3  layer has a thickness of no more than 100 nm. 
     
     
         32 . The method according to  claim 19 , further comprising forming a hole blocking layer on the first electrode, wherein the light sensitizing layer is formed on the hole blocking layer. 
     
     
         33 . The method according to  claim 32 , wherein the hole blocking layer comprises at least one material selected from the group consisting of ZnO, naphthalene tetracarboxylic anhydride (NTCDA), 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), p-bis(triphenylsilyl)benzene (UGH2), 4,7-diphenyl-1,10-phenanthroline (BPhen), tris-(8-hydroxy quinoline) aluminum (Alq3), 3,5′-N,N′-dicarbazole-benzene (mCP), C60, tris[3-(3-pyridyl)-mesityl]borane (3TPYMB), and TiO 2 . 
     
     
         34 . The method according to  claim 19 , wherein forming the first electrode comprises forming the first electrode on a glass substrate. 
     
     
         35 . The method according to  claim 19 ,
 wherein forming the electron blocking/tunneling layer comprises forming a TAPC/MoO 3  stack layer,   wherein the TAPC layer is formed in direct contact with the light sensitizing layer,   wherein the second electrode is formed in direct contact with the MoO 3  layer, and   wherein the light sensitizing layer comprises PbS quantum dots.   
     
     
         36 . The method according to  claim 35 , further comprising forming a hole blocking layer on the first electrode, wherein the light sensitizing layer is formed on the hole blocking layer. 
     
     
         37 - 98 . (canceled)

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