Low resistance contact structures including a copper fill for trench structures

Abstract

An electrical device is provided that includes at least one contact surface and an interlevel dielectric layer present atop the electrical device. The interlevel dielectric layer may include at least one trench to the at least one contact surface of the electrical device. A liner of tantalum or tantalum nitride can be present on sidewalls of the trench structure and a base surface of the trench provided by the contact surface of the electrical device. A copper fill promoting liner that includes at least one ruthenium (Ru), rhodium (Rh), iridium (Jr), osmium (Os), molybdenum (Mo), and copper (Cu) may be in direct contact with the liner of tantalum or tantalum nitride. A copper containing metal that fills the at least one trench and is present directly on the copper fill promoting liner.

What is claimed is: 
     
         1 . An electrical device comprising:
 at least one contact surface to the electrical device and an interlevel dielectric layer present atop the electrical device, wherein the interlevel dielectric layer includes at least one trench to the at least one contact surface of the electrical device;   a liner of tantalum or tantalum nitride present on sidewalls of the trench structure and a base surface of the trench provided by the contact surface of the electrical device;   a copper fill promoting liner comprising ruthenium (Ru), rhodium (Rh), iridium (Jr), osmium (Os), molybdenum (Mo), copper (Cu) or a combination thereof in direct contact with the liner of tantalum or tantalum nitride; and   a copper containing metal that fills the at least one trench and is present directly on the copper fill promoting liner.   
     
     
         2 . The electrical device of  claim 1 , wherein the liner of the tantalum or tantalum nitride is in direct contact with the contact surface of the electrical device. 
     
     
         3 . The electrical device of  claim 1 , wherein the liner of tantalum or tantalum nitride has a thickness ranging from 10 Å to 50 Å. 
     
     
         4 . The electrical device of  claim 1 , wherein the liner of tantalum or tantalum nitride, the copper fill promoting liner, and the copper containing metal fills an entirety of the at least one trench. 
     
     
         5 . The electrical device of  claim 1 , wherein the electrical device is a field effect transistor. 
     
     
         6 . An electrical device comprising:
 at least one contact surface to the electrical device and an interlevel dielectric layer present atop the electrical device, wherein the interlevel dielectric layer includes at least one trench to the at least one contact surface of the electrical device;   a titanium liner layer present on sidewalls of the trench structure and a base surface of the trench provided by the contact surface of the electrical device   a liner of tantalum present on the titanium liner layer;   a copper fill promoting liner; and   a copper containing metal that fills the at least one trench and is present directly on the copper fill promoting liner.   
     
     
         7 . The electrical device of  claim 6 , wherein the titanium liner layer has a thickness ranging from 10 Å to 100 Å. 
     
     
         8 . The electrical device of  claim 6 , wherein the electrical device comprises a field effect transistor. 
     
     
         9 . The electrical device of  claim 6 , wherein the titanium liner layer, the liner of tantalum, the copper fill promoting liner, and the copper containing metal fills an entirety of the at least one trench. 
     
     
         10 . The electrical device of  claim 6 , wherein the liner of tantalum has a thickness ranging from 10 Å to 50 Å. 
     
     
         11 . The electrical device of  claim 6 , wherein the copper fill promoting liner is selected from the group consisting ruthenium (Ru), rhodium (Rh), iridium (Jr), osmium (Os), molybdenum (Mo), copper (Cu) and a combination thereof. 
     
     
         12 . The electrical device of  claim 11 , wherein the copper fill promoting liner is in direct contact with the liner of tantalum. 
     
     
         13 . An electrical device comprising:
 at least one contact surface to the electrical device and an interlevel dielectric layer present atop the electrical device, wherein the interlevel dielectric layer includes at least one trench to the at least one contact surface of the electrical device;   a titanium liner layer present on sidewalls of the trench structure and a base surface of the trench provided by the contact surface of the electrical device   a liner of tantalum nitride present on the titanium liner layer;   a copper fill promoting liner; and   a copper containing metal that fills the at least one trench and is present directly on the copper fill promoting liner.   
     
     
         14 . The electrical device of  claim 13 , wherein the titanium liner layer has a thickness ranging from 10 Å to 100 Å. 
     
     
         15 . The electrical device of  claim 13 , wherein the electrical device comprises a field effect transistor. 
     
     
         16 . The electrical device of  claim 13 , wherein the titanium liner layer, the liner of tantalum, the copper fill promoting liner, and the copper containing metal fills an entirety of the at least one trench. 
     
     
         17 . The electrical device of  claim 13 , wherein the liner of tantalum has a thickness ranging from 10 Å to 50 Å. 
     
     
         18 . The electrical device of  claim 13 , wherein the copper fill promoting liner comprises a metal selected from the group consisting of ruthenium (Ru), rhodium (Rh), iridium (Jr), osmium (Os), molybdenum (Mo), copper (Cu) or a combination thereof. 
     
     
         19 . The electrical device of  claim 13 , wherein the copper fill promoting liner is in in direct contact with the liner of tantalum nitride. 
     
     
         20 . The electrical device of  claim 13 , wherein the copper fil promoting liner has a thickness ranging from 30 Å to 50 Å.