Semiconductor device

Abstract

A semiconductor device includes a hard mask layer and a plurality of spacers. The hard mask layer is disposed on a target layer and has a first material and a second material. The spacers are disposed on the hard mask layer, wherein a first portion of the spacers is disposed on the first material, and a second portion of the spacers is disposed on the second material.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a hard mask layer, disposed on a target layer and comprising a first material and a second material; and   a plurality of spacers, disposed on the hard mask layer, wherein a first portion of the spacers is disposed on the first material, and a second portion of the spacers is disposed on the second material.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the first material is level with the second material. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the second material comprises a plurality of units separated from each other, and a portion of the spacers is disposed on the units respectively. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein the spacers comprise tungsten, tantalum nitride, titanium nitride or titanium dioxide. 
     
     
         5 . The semiconductor device according to  claim 1 , wherein the target layer comprises semiconductor material, conductive material or non-conductive material.