Structures with thinned dielectric material

Abstract

The disclosure relates to semiconductor structures and, more particularly, to structures with thinned dielectric material and methods of manufacture. The method includes depositing a high-k dielectric on a substrate. The method further includes depositing a titanium nitride film directly on the high-k while simultaneously etching the high-k dielectric.

What is claimed: 
     
         1 . A method comprising:
 depositing a high-k dielectric on a substrate; and   depositing a titanium nitride film directly on the high-k while simultaneously etching the high-k dielectric.   
     
     
         2 . The method of  claim 1 , wherein the depositing the TiN further includes using a precursor containing TiCl 4 . 
     
     
         3 . The method of  claim 2 , wherein the precursor further comprises NH 3 . 
     
     
         4 . The method of  claim 2 , wherein the TiN with precursor is deposited at a temperature of at or above about 300° C. 
     
     
         5 . The method of  claim 4 , wherein the TiN with precursor is deposited at a temperature of about 500° C. 
     
     
         6 . The method of  claim 1 , further comprising depositing material directly on the high-k dielectric on the pFET side prior to the etching such that the material blocks the TiN with precursor from being deposited directly on the high-k dielectric on the pFET side, and only the high-k dielectric on the nFET side of the substrate is thinned by exposing the high-k dielectric on the nFET side to the TiN with precursor. 
     
     
         7 . The method of  claim 6 , wherein the material is deposited on the nFET side of the substrate and subsequently removed to expose the high-k dielectric on the nFET side of the substrate for the TiN with precursor to be deposited directly on the high-k dielectric on the nFET side. 
     
     
         8 . The method of  claim 1 , wherein the high-k dielectric is etched on both the pFET side and the nFET side by depositing the TiN with precursor on exposed portions of the high-k dielectric. 
     
     
         9 . The method of  claim 1 , wherein the high-k dielectric is HfO 2 . 
     
     
         10 . A method comprising:
 depositing a high-k dielectric material on a pFET side and an nFET side of a substrate; and   depositing titanium nitride (TiN) with a precursor of TiCl 4  directly on the high-k dielectric material on at least one of the pFET side and the nFET side of the substrate to thin the high-k dielectric material which contacts the TiCl 4  TiN.   
     
     
         11 . The method of  claim 10 , wherein the precursor further comprises NH 3 . 
     
     
         12 . The method of  claim 10 , wherein the high-k dielectric is HfO 2 . 
     
     
         13 . The method of  claim 10 , wherein the TiN TiCl 4  is deposited at a temperature of at or above about 300° C. 
     
     
         14 . The method of  claim 13 , wherein the TiN TiCl 4  is deposited at a temperature of about 500° C. 
     
     
         15 . The method of  claim 10 , further comprising depositing material directly on the high-k dielectric material on the pFET side such that the material blocks the TiCl 4  TiN from being deposited directly on the high-k dielectric on the pFET side, and only the high-k dielectric on the nFET side of the substrate is thinned. 
     
     
         16 . The method of  claim 15 , wherein the material is deposited on the nFET side of the substrate and subsequently removed to expose the high-k dielectric on the nFET side of the substrate for the TiCl 4  TiN to thin the high-k dielectric only on the nFET side. 
     
     
         17 . The method of  claim 10 , wherein the material is TiN. 
     
     
         18 . The method of  claim 10 , wherein the high-k dielectric is etched on both the pFET side and the nFET side by depositing the TiCl 4  TiN on exposed portions of the high-k dielectric on both the pFET side and the nFET. 
     
     
         19 . A structure, comprising:
 an nFET device having a high-k dielectric material on a substrate; and   a pFET device having the high-k dielectric material on the substrate,   wherein high-k dielectric material of at least one of the nFET device and the pFET device is devoid of C.   
     
     
         20 . The structure of  claim 19 , wherein only a difference in thickness of the high-k dielectric material at the nFET device and the pFET device is between about 1 Angstrom and about 3 Angstroms.