System and method for forming microwells

Abstract

A method of forming a sensor component includes forming a first layer over a sensor pad of a sensor of a sensor array. The first layer includes a first inorganic material. The method further includes forming a second layer over the first layer. The second layer includes a polymeric material. The method also includes forming a third layer over the second layer, the third layer comprising a second inorganic material; patterning the third layer; and etching the second layer to define a well over the sensor pad of the sensor array.

1 . A method of forming a sensor component, the method comprising:
 forming a first layer over a sensor pad of a sensor of a sensor array, the first layer comprising a first inorganic material;   patterning the first layer;   forming a second layer over the patterned first layer, the second layer comprising a polymeric material;   forming a third layer over the second layer, the third layer comprising a second inorganic material;   patterning the third layer; and   etching the second layer to define a well over the sensor pad of the sensor array.   
     
     
         2 . The method of  claim 1 , wherein the first inorganic material comprises an oxide of silicon. 
     
     
         3 . The method of  claim 1 , wherein the polymeric material comprises a polyimide. 
     
     
         4 . The method of  claim 1 , wherein the second inorganic material comprises a low temperature oxide of silicon. 
     
     
         5 . (canceled) 
     
     
         6 . (canceled) 
     
     
         7 . (canceled) 
     
     
         8 . The method of  claim 1 , wherein patterning the first layer includes etching with a fluorine-containing plasma. 
     
     
         9 . An apparatus comprising:
 an array of sensors, a sensor of the array of sensors including a sensor pad;   a first insulative layer disposed over the array of sensors and defining an access exposing the sensor pad through the first insulative layer, the first insulative layer comprising an inorganic material;   a second insulative layer disposed over the first insulative layer and defining a well in fluid communication with the access and exposing the sensor pad, the second insulative layer comprising a polymeric material.   
     
     
         10 . The apparatus of  claim 9 , further comprising a third insulative layer disposed over the second insulative layer and defining an access in fluid communication with the well through the third insulative layer, the third insulative layer comprising a second inorganic material. 
     
     
         11 . The apparatus of  claim 10 , wherein the second inorganic material includes a low temperature oxide of silicon. 
     
     
         12 . The apparatus of  claim 9 , wherein the polymeric material includes polyimide. 
     
     
         13 . The apparatus of  claim 9 , wherein the inorganic material includes an oxide of silicon. 
     
     
         14 . The apparatus of  claim 9 , wherein the sensor is a chemical field effect transistor (chemFET). 
     
     
         15 . The apparatus of  claim 9 , wherein the sensor pad is coupled to a floating gate. 
     
     
         16 - 20 . (canceled)