Light emitting devices with built-in chromaticity conversion and methods of manufacturing

Abstract

Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

I/we claim: 
     
         1 . A method for manufacturing a light emitting device, comprising:
 forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission via electroluminescence;   determining a conversion characteristic of a second emission based on a target chromaticity and the first emission such that a combination of the first and second emissions at least approximates the target chromaticity;   selecting a conversion material based on the determined conversion characteristic; and   forming the conversion material on the second semiconductor material via at least one of metal organic chemical vapor deposition, molecular beam epitaxy, liquid phase epitaxy, hydride vapor phase epitaxy, and ion implantation.   
     
     
         2 . The method of  claim 1  wherein:
 the conversion material includes a superlattice structure; and 
 selecting the conversion material includes selecting at least one of a thickness and a composition of the superlattice structure based on the determined conversion characteristic of the second emission. 
 
     
     
         3 . The method of  claim 1  wherein:
 the conversion material includes a superlattice structure; and 
 selecting the conversion material includes:
 determining a bandgap energy that corresponds to the determined conversion characteristic of the second emission; and 
 selecting at least one of a thickness and a composition of the superlattice structure based on the determined bandgap energy. 
 
 
     
     
         4 . The method of  claim 1  wherein:
 the conversion material includes a superlattice structure; and 
 selecting the conversion material includes:
 determining a bandgap energy that corresponds to the determined conversion characteristic of the second emission; 
 selecting at least one of a thickness and a composition of the superlattice structure based on the determined bandgap energy; and 
 adjusting at least one of the thickness and the composition of the superlattice structure based on the target chromaticity of the light emitting device. 
 
 
     
     
         5 . The method of  claim 1  wherein:
 the conversion material includes an epitaxial bulk material with a dopant of europium (Eu) and/or erbium (Er); and 
 selecting the conversion material includes adjusting at least one of a composition and a concentration of the dopant based on the target chromaticity of the light emitting device. 
 
     
     
         6 . A method for manufacturing a light emitting device, comprising:
 forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission;   forming a conversion material on the second semiconductor material, the conversion material having a crystalline structure and being configured to produce a second emission; and   adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.   
     
     
         7 . The method of  claim 6  wherein:
 the conversion material includes a superlattice structure; and 
 adjusting the characteristic of the conversion material includes adjusting at least one of a thickness and a composition of the superlattice structure based on the target chromaticity of the light emitting device. 
 
     
     
         8 . The method of  claim 6  wherein:
 the conversion material includes an epitaxial bulk material with a dopant of europium (Eu) and/or erbium (Er); and 
 adjusting the characteristic of the conversion material includes adjusting at least one of a composition and a concentration of the dopant based on the target chromaticity of the light emitting device. 
 
     
     
         9 . The method of  claim 6  wherein:
 the conversion material includes a semiconductor material configured as multiple quantum wells; and 
 adjusting the characteristic of the conversion material includes adjusting at least one of a composition and a thickness of the multiple quantum wells based on the target chromaticity of the light emitting device.