Semiconductor device

Abstract

A semiconductor device includes: an insulating substrate; an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate; a plating formed on a surface of the aluminum pattern; and a semiconductor element joined to the plating, wherein a thickness of the plating is 10 μm or more.

1 . A semiconductor device comprising:
 an insulating substrate;   an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate;   a plating formed on a surface of the aluminum pattern; and   a semiconductor element joined to the plating,   wherein a thickness of the plating is 10 μm or more.   
     
     
         2 . The semiconductor device of  claim 1 , further comprising a solder joining the semiconductor element to the plating,
 wherein the plating includes a lower layer film and an upper layer film formed on the lower layer film,   the lower layer film has higher rigidity than the upper layer film, and   the upper layer film has higher wettability with respect to the solder than the lower layer film.   
     
     
         3 . The semiconductor device of  claim 1 , wherein the plating includes first and second platings arranged side by side,
 the semiconductor element includes first and second semiconductor elements joined to the first and second platings respectively,   the first semiconductor element is thinner than the second semiconductor element, and   the first plating is thicker than the second plating.   
     
     
         4 . The semiconductor device of  claim 1 , wherein a thickness of the plating changes directly below the semiconductor element. 
     
     
         5 . The semiconductor device of  claim 1 , wherein a groove is provided in a periphery of the semiconductor element or in part of the periphery on a top surface of the aluminum pattern. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the surface of the aluminum pattern is subjected to total or partial work hardening. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the semiconductor element is formed of a wide band gap semiconductor.