Method of forming pattern

Abstract

Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.

What is claimed is: 
     
         1 . A method of producing a semiconductor device, comprising a pattern forming method, which comprises:
 (a) forming a chemically amplified resist composition into a film,   (b) exposing the film to light, and   (c) developing the exposed film with a developer containing a first organic solvent subjected to a distilling operation,   wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.   
     
     
         2 . The method according to  claim 1 , wherein the first organic solvent contained in the developer is one filled in a storage container in an environment whose cleanliness defined in US Federal Standard 209E is class 10,000 or below. 
     
     
         3 . The method according to  claim 1 , wherein the pattern forming method further comprises:
 (d) rinsing the developed film by a rinse liquid containing a second organic solvent,   wherein in the rinse liquid, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.   
     
     
         4 . The method according to  claim 3 , wherein the second organic solvent contained in the rinse liquid is one filled in a storage container in an environment whose cleanliness defined in US Federal Standard 209E is class 10,000 or below. 
     
     
         5 . The method according to  claim 1 , wherein the exposure (b) is carried out using an ArF excimer laser. 
     
     
         6 . The method according to  claim 1 , wherein the composition comprises a resin containing a group that when acted on by an acid, is decomposed to thereby produce a polar group and a compound that when exposed to actinic rays or radiation, generates an acid. 
     
     
         7 . The method according to  claim 6 , wherein the resin has an alicyclic hydrocarbon structure. 
     
     
         8 . The method according to  claim 6 , wherein substantially no aromatic ring is contained in the resin. 
     
     
         9 . A method of producing a semiconductor device, comprising a pattern forming method, which comprises:
 (a) forming a chemically amplified resist composition into a film,   (b) exposing the film to light, and   (c) developing the exposed film with a developer containing a first organic solvent,   wherein in the developer, particles each having a diameter of 0.3 pm or greater amount to a density of 30 particles/ml or less, and   wherein the first organic solvent is filled in a storage container having been rinsed with the first organic solvent and dried.   
     
     
         10 . The method according to  claim 9 , wherein the first organic solvent contained in the developer is one filled in a storage container in an environment whose cleanliness defined in US Federal Standard 209E is class 10,000 or below. 
     
     
         11 . The method according to  claim 9 , wherein the pattern forming method further comprises:
 (d) rinsing the developed film by a rinse liquid containing a second organic solvent,   wherein in the rinse liquid, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.   
     
     
         12 . The method according to  claim 9 , wherein the second organic solvent contained in the rinse liquid is one filled in a storage container in an environment whose cleanliness defined in US Federal Standard 209E is class 10,000 or below. 
     
     
         13 . The method according to  claim 9 , wherein the exposure (b) is carried out using an ArF excimer laser. 
     
     
         14 . The method according to  claim 9 , wherein the composition comprises a resin containing a group that when acted on by an acid, is decomposed to thereby produce a polar group and a compound that when exposed to actinic rays or radiation, generates an acid. 
     
     
         15 . The method according to  claim 9 , wherein the resin has an alicyclic hydrocarbon structure. 
     
     
         16 . The method according to  claim 9 , wherein substantially no aromatic ring is contained in the resin. 
     
     
         17 . A method of producing a semiconductor device, comprising a pattern forming method, which comprises:
 (a) forming a chemically amplified resist composition into a film,   (b) exposing the film to light, and   (c) developing the exposed film with a developer containing a first organic solvent that is methyl amyl ketone,   wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.   
     
     
         18 . A method of producing a semiconductor device comprising a pattern forming method, which comprises:
 (a) forming a chemically amplified resist composition into a film,   (b) exposing he film to light, and   (c) developing the exposed film with a developer containing a first organic solvent, and   (d) rinsing the developed film by a rinse liquid containing a second organic solvent that is 4-methyl-2-pentanol,   wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.