Image sensor and method of fabricating the same

Abstract

Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters. The color filters are absent from an interface region between the light-receiving region and the light-blocking region.

1 - 8 . (canceled) 
     
     
         9 . A method of fabricating an image sensor, comprising:
 forming photoelectric conversion devices in a semiconductor layer, the semiconductor layer having a light-receiving region and a light-blocking region;   forming a light-blocking layer on the semiconductor layer to cover the light-blocking region;   forming color filters on the light-blocking layer to face the photoelectric conversion devices, respectively;   removing at least a portion of the color filters; and   forming micro lenses on the remaining color filters, respectively.   
     
     
         10 . The method of  claim 9 , wherein
 the light-blocking region surrounds the light-receiving region,   the light-receiving region includes an image region and a dummy region, and   the dummy region is between the image region and the light-blocking region.   
     
     
         11 . The method of  claim 10 , wherein the removing the portion of the color filters includes:
 forming a photoresist layer on the semiconductor layer and the light-blocking layer;   exposing and developing the photoresist layer to form photoresist patterns on pixels, respectively, to form the color pixels and to remove the portion of the color filters; and   dyeing the photoresist patterns.   
     
     
         12 . The method of  claim 10 , wherein the removing the portion of the color filters includes:
 forming a photoresist layer on the semiconductor layer and the light-blocking layer;   exposing and developing the photoresist layer to form photoresist patterns on pixels, respectively;   dyeing the photoresist patterns to form the color filters;   forming a mask pattern on the color filters; and   removing color filters exposed by the mask pattern.   
     
     
         13 . The method of  claim 9 , further comprising:
 forming a planarization layer between the light-blocking layer and the color filters, wherein   the removing the portion of the color filters exposes a top surface of the planarization layer.   
     
     
         14 . The method of  claim 9 , further comprising:
 forming an interconnection layer on the semiconductor layer, the semiconductor layer between the interconnection layer and the light-blocking layer.   
     
     
         15 . The method of  claim 9 , further comprising:
 forming an interconnection layer between the light-blocking layer and the semiconductor layer.   
     
     
         16 - 20 . (canceled)