Base film-forming composition, and directed self-assembly lithography method

Abstract

A base film-forming composition includes a compound including a group capable of reacting with Si—OH or Si—H, and a solvent. The base film-forming composition is for forming a base film provided between a layer including a silicon atom and a directed self-assembling film in a directed self-assembly lithography process. The receding contact angle of the base film for pure water is no less than 70° and no greater than 90°. The compound is preferably represented by formula (1). In the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200. (E n -AD) m   (1)

1 . A base film-forming composition comprising:
 a compound comprising a group capable of reacting with Si—OH or Si—H; and   a solvent,   a receding contact angle of a base film formed from the base film-forming composition for pure water being no less than 70° and no greater than 90°.   
     
     
         2 . The base film-forming composition according to  claim 1 , wherein the compound is represented by formula (1):
   (E n -AD) m   (1)
   wherein, in the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200, wherein in a case where m is 2 or greater, a plurality of Ds are identical or different, two or more Ds are optionally bound with each other, and in a case where n is 2 or greater, a plurality of Es are identical or different.   
     
     
         3 . The base film-forming composition according to  claim 2 , wherein D in the formula (1) represents a group that comprises a sulfur atom. 
     
     
         4 . The base film-forming composition according to  claim 3 , wherein D and A in the formula (1) are linked via the sulfur atom. 
     
     
         5 . The base film-forming composition according to  claim 2 , wherein A in the formula (1) represents an organic group having 1 to 30 carbon atoms, and n is an integer of 1 to 10. 
     
     
         6 . The base film-forming composition according to  claim 5 , wherein the compound does not comprise a group that comprises active hydrogen, other than the group represented by E in the formula (1). 
     
     
         7 . The base film-forming composition according to  claim 5 , wherein E in the formula (1) represents a hydroxy group or a group represented by formula (2):
   R B   3-a R A   a Si—  (2)
   wherein, in the formula (2), R A  represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; R B  represents a monovalent oxyhydrocarbon group having 1 to 20 carbon atoms or a halogen atom; and a is an integer of 0 to 2, wherein in a case where R A  and R B  are each present in a plurality of number, a plurality of R A s are identical or different, and a plurality of R B s are identical or different.   
     
     
         8 . The base film-forming composition according to  claim 2 , wherein A in the formula (1) represents a group represented by formula (3):
   (* 1  n -QT-* 2 ) m   (3)
   wherein, in the formula (3), Q represents a polysiloxane structure having a valency of (m+n) and having 2 to 100 silicon atoms; T represents a divalent organic group having 1 to 30 carbon atoms that bonds to the silicon atom in Q at the carbon atom or oxygen atom; m and n are as defined in the formula (1); * 1  denotes a site bound to E in the formula (1); and * 2  denotes a site bound to D in the formula (1).   
     
     
         9 . The base film-forming composition according to  claim 8 , wherein E in the formula (1) represents a hydroxy group, an alkoxy group or a combination thereof. 
     
     
         10 . The base film-forming composition according to  claim 2 , wherein D in the formula (1) represents a group that comprises a polymeric chain comprising a carbon-carbon bond. 
     
     
         11 . The base film-forming composition according to  claim 3 , wherein the compound is obtained by subjecting a vinyl monomer to radical polymerization in the presence of a chain transfer agent represented by formula (4):
   (E n -ASH) m   (4)
   wherein, in the formula (4), A, E, m and n are as defined in the formula (1).   
     
     
         12 . The base film-forming composition according to  claim 1 , further comprising an acid generating agent. 
     
     
         13 . The base film-forming composition according to  claim 1 , wherein the solvent comprises an ester solvent, a ketone solvent, or a combination thereof. 
     
     
         14 - 15 . (canceled)