Solar cell and method for manufacturing the same

Abstract

A solar cell is discussed. The solar cell includes a silicon substrate; a front passivation layer positioned on a front surface of the silicon substrate; an n-doped layer positioned on the front surface of the silicon substrate; an anti-reflection layer positioned on the n-doped layer; a p-doped region positioned on a rear surface of the silicon substrate; an n-doped region positioned on the rear surface of the silicon substrate and spaced apart from the p-doped region; a rear passivation layer positioned on the rear surface of the silicon substrate, the rear passivation layer including: a first portion positioned between the p-doped region and the silicon substrate; a second portion positioned between the n-doped region and the silicon substrate, the second portion being space apart from the first potion; and a third portion disposed between the first portion and the second portion; a first electrode directly contacted to the p-doped region; and a second electrode directly contacted to the n-doped region.

What is claimed is: 
     
         1 . A solar cell, comprising:
 a silicon substrate;   a front passivation layer positioned on a front surface of the silicon substrate;   an n-doped layer positioned on the front surface of the silicon substrate;   an anti-reflection layer positioned on the n-doped layer;   a p-doped region positioned on a rear surface of the silicon substrate;   an n-doped region positioned on the rear surface of the silicon substrate and spaced apart from the p-doped region;   a rear passivation layer positioned on the rear surface of the silicon substrate, the rear passivation layer including:
 a first portion positioned between the p-doped region and the silicon substrate; 
 a second portion positioned between the n-doped region and the silicon substrate, the second portion being space apart from the first potion; and 
 a third portion disposed between the first portion and the second portion; 
   a first electrode directly contacted to the p-doped region; and   a second electrode directly contacted to the n-doped region,   wherein a thickness of the first portion is the same as a thickness of the second portion and is different from a thickness of the third portion, and   wherein the third portion includes a material different from the first and second portions.   
     
     
         2 . The solar cell of  claim 1 , wherein a crystallinity of at least one of the n-doped region and the p-doped region is different from that of the silicon substrate. 
     
     
         3 . The solar cell of  claim 2 , wherein the silicon substrate is formed of a crystalline silicon, and
 wherein at least one of the n-doped region and the p-doped region is formed of an amorphous silicon.   
     
     
         4 . The solar cell of  claim 1 , wherein a crystallinity of the p-doped region is equal to a crystallinity of the n-doped region. 
     
     
         5 . The solar cell of  claim 1 , wherein the first and second portions include a conductive portion. 
     
     
         6 . The solar cell of  claim 5 , wherein the first and second portions are formed of an intrinsic amorphous semiconductor layer. 
     
     
         7 . The solar cell of  claim 6 , wherein the first and second portions are formed of a material including Si. 
     
     
         8 . The solar cell of  claim 1 , wherein the third portions is formed of at least one of SiOx and SiNx. 
     
     
         9 . The solar cell of  claim 1 , wherein the thickness of the third portions is larger than the thicknesses of the first and second portions. 
     
     
         10 . The solar cell of  claim 1 , wherein the front passivation layer and the anti-reflection layer are formed on a textured surface of the silicon substrate. 
     
     
         11 . The solar cell of  claim 10 , wherein the front surface of the silicon substrate has a pyramid structure, and
 wherein the rear surface of the silicon substrate where the p-doped region and the n-doped region are located and is relatively flat compared to non p-doped and n-doped regions.   
     
     
         12 . The solar cell of  claim 1 , wherein a thickness of the front passivation layer is 2 nm to 20 nm. 
     
     
         13 . The solar cell of  claim 1 , wherein the anti-reflection layer is formed of at least one of SiOx and SiNx. 
     
     
         14 . The solar cell of  claim 1 , wherein the anti-reflection layer is formed of a transparent metal oxide. 
     
     
         15 . The solar cell of  claim 1 , wherein the anti-reflection layer has a single-layered structure or a multi-layered structure. 
     
     
         16 . The solar cell of  claim 1 , wherein the n-doped region and the p-doped region are parallel to each other while interposing a spacing corresponding to the third portion. 
     
     
         17 . The solar cell of  claim 1 , wherein the first electrode and the second electrode are formed of at least one conductive material selected from the group consisting of nickel (Ni), copper (Cu), silver (Ag), aluminum (Al), tin (Sn), zinc (Zn), indium (In), titanium (Ti), gold (Au), and a combination thereof. 
     
     
         18 . The solar cell of  claim 1 , wherein the first electrode and the second electrode reflect light passing through the silicon substrate. 
     
     
         19 . The solar cell of  claim 1 , wherein the silicon substrate, the n-doped layer and the n-doped region are doped with at least one of impurities of a group V element, and the p-doped region is doped with at least one of impurities of a group III element. 
     
     
         20 . The solar cell of  claim 1 , wherein the group V element includes phosphor (P), arsenic (As), and antimony (Sb), and
 wherein the group III element includes boron (B), gallium (Ga), and indium (In).