Method for processing a wafer and method for dicing a wafer

Abstract

In various embodiments, a method for processing a wafer may include: providing a wafer having at least one die region and at least one metallization disposed over the at least one die region; covering the at least one metallization with a protecting layer; plasma etching the wafer to form at least one die.

What is claimed is: 
     
         1 . Method for processing a wafer, comprising:
 providing a wafer comprising a plurality of die regions, a plurality of kerf regions, and a plurality of metallizations disposed over the plurality of die regions;   depositing a protecting layer over the wafer;   patterning the protecting layer such that the plurality of metallizations are encapsulated by the patterned protecting layer;   plasma etching the plurality of kerf regions of the wafer to form a plurality of dies;   removing the protecting layer after plasma etching the plurality of kerf regions of the wafer.   
     
     
         2 . The method of  claim 1 ,
 wherein the plurality of metallizations are disposed over a backside of the wafer.   
     
     
         3 . The method of  claim 1 ,
 wherein the protecting layer comprises a resist material.   
     
     
         4 . The method of  claim 1 ,
 wherein the protecting layer comprises a hardmask material.   
     
     
         5 . The method of  claim 4 ,
 wherein the hardmask material comprises at least one of an oxide material and a nitride material.   
     
     
         6 . The method of  claim 2 ,
 wherein the plasma etching comprises a Bosch plasma etching process.   
     
     
         7 . Method for dicing a wafer, comprising:
 encapsulating at least one backside metallization disposed over at least one die region of a wafer with a protecting layer;   dicing the wafer by means of a plasma etch process, wherein the at least one backside metallization is protected by the protecting layer.   
     
     
         8 . The method of  claim 7 ,
 wherein encapsulating the at least one backside metallization comprises:   depositing the protecting layer over the at least one backside metallization; and   patterning the protecting layer.   
     
     
         9 . The method of  claim 7 ,
 wherein the protecting layer comprises a resist material.   
     
     
         10 . The method of  claim 7 ,
 wherein the protecting layer comprises at least one of an oxide material and a nitride material.   
     
     
         11 . The method of  claim 7 ,
 wherein the plasma etch process comprises a Bosch plasma etch process.