Optoelectronic semiconductor device

Abstract

An optoelectronic semiconductor device comprising: a semiconductor system comprises an upper surface, an interfacial layer comprises a upper interfacial layer on the upper surface of the semiconductor system, and the upper interfacial layer comprises a first wavelength converting material; and a void region in the upper interfacial layer, and a material different from that of the upper interfacial layer fills in the void region.

What is claimed is: 
     
         1 . An optoelectronic semiconductor device, comprising:
 a semiconductor system comprises an upper surface,   an interfacial layer comprises a upper interfacial layer on the upper surface of the semiconductor system, and the upper interfacial layer comprises a first wavelength converting material; and   a void region in the upper interfacial layer, and a material different from that of the upper interfacial layer fills in the void region.   
     
     
         2 . The optoelectronic semiconductor device of  claim 1 , further comprises a plurality of electrical connectors dispose on a bottom surface of the semiconductor system which is opposite to the upper surface, and the plurality of electrical connectors electrically connect to the semiconductor system. 
     
     
         3 . The optoelectronic semiconductor device of  claim 1 , wherein the material filled in the void region comprises a second wavelength converting material different from the first wavelength converting material. 
     
     
         4 . The optoelectronic semiconductor device of  claim 1 , wherein the semiconductor system comprises a side surface connecting to the upper surface, and the interfacial layer comprises a side interfacial layer connecting to the upper interfacial layer, wherein the side interfacial layer covers the side surface of the semiconductor system. 
     
     
         5 . The optoelectronic semiconductor device of  claim 4 , wherein the side interfacial layer comprises a third wavelength converting material different from the first wavelength converting material. 
     
     
         6 . The optoelectronic semiconductor device of  claim 1 , wherein the material fills in the void region comprises air, insulating material, or indium tin oxide. 
     
     
         7 . The optoelectronic semiconductor device of  claim 1 , wherein the upper interfacial layer is patterned to set a distribution boundary of the first wavelength converting material. 
     
     
         8 . The optoelectronic semiconductor device of  claim 1 , further comprises a reflector disposes on a bottom surface of the semiconductor system which is opposite to the upper surface. 
     
     
         9 . The optoelectronic semiconductor device of  claim 1 , wherein the upper interfacial layer comprises an insulating material, and the first wavelength converting material disperses in the insulating material. 
     
     
         10 . The optoelectronic semiconductor device of  claim 1 , further comprises a upper electrode on the upper surface of the semiconductor system, and a transparent conductive material filled in the void region physically connects to the upper electrode. 
     
     
         11 . An optoelectronic semiconductor device, comprising:
 a semiconductor system comprises a upper surface and side surface connecting to the upper surface,   an upper interfacial layer on the upper surface of the semiconductor system, and the upper interfacial layer comprises a first wavelength converting material; and   a side interfacial layer on the side surface of the semiconductor system, and the side interfacial layer comprises a second wavelength converting material different from the first wavelength converting material.   
     
     
         12 . The optoelectronic semiconductor device of  claim 11 , further comprises a void region in the upper interfacial layer, and a material different from that of the upper interfacial layer fills in the void region. 
     
     
         13 . The optoelectronic semiconductor device of  claim 11 , further comprises a plurality of electrical connectors dispose on a bottom surface of the semiconductor system which is opposite to the upper surface, and the plurality of electrical connectors electrically connect to the semiconductor system. 
     
     
         14 . The optoelectronic semiconductor device of  claim 12 , wherein the material filled in the void region comprises a third wavelength converting material different with the first wavelength converting material. 
     
     
         15 . The optoelectronic semiconductor device of  claim 12 , wherein the material fills in the void region comprises air, insulating material, or indium tin oxide. 
     
     
         16 . The optoelectronic semiconductor device of  claim 11 , wherein the upper interfacial layer is patterned to set a distribution boundary of the first wavelength converting material. 
     
     
         17 . The optoelectronic semiconductor device of  claim 11 , further comprises a reflector disposes on a bottom surface of the semiconductor system which is opposite to the upper surface. 
     
     
         18 . The optoelectronic semiconductor device of  claim 12 , wherein the upper interfacial layer comprises an insulating material, and the first wavelength converting material disperses in the insulating material. 
     
     
         19 . The optoelectronic semiconductor device of  claim 12 , further comprises a upper electrode on the upper surface of the semiconductor system, and a transparent conductive material filled in the void region physically connects to the upper electrode. 
     
     
         20 . The optoelectronic semiconductor device of  claim 11 , wherein the semiconductor system further comprises a bottom surface of the semiconductor system which is opposite to the upper surface, and a bottom interfacial layer comprising the second wavelength converting material locates on the bottom surface.