US2017076902A1PendingUtilityA1

Ion beam device

Assignee: HITACHI HIGH TECH CORPPriority: Jun 5, 2008Filed: Nov 28, 2016Published: Mar 16, 2017
Est. expiryJun 5, 2028(~1.9 yrs left)· nominal 20-yr term from priority
H01J 27/26H01J 37/28H01J 2237/2803H01J 2237/0807H01J 2237/061H01J 2237/002H01J 37/08H01J 37/067H01J 37/023H01J 27/022H01J 2237/006H01J 37/26
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Claims

Abstract

An ion beam device according to the present invention includes a gas field ion source including an emitter tip supported by an emitter base mount, a ionization chamber including an extraction electrode and being configured to surround the emitter tip, and a gas supply tube. A center axis line of the extraction electrode overlaps or is parallel to a center axis line of the ion irradiation light system, and a center axis line passing the emitter tip and the emitter base mount is inclinable with respect to a center axis line of the ionization chamber. Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

Claims

exact text as granted — not AI-modified
1 . A gas field ion source comprising:
 an acicular anode emitter tip;   a gas molecule ionization chamber to supply gas molecules to the vicinity of the apex of the emitter tip and ionize the gas molecules by an electric field at the apex of the emitter tip; and   a vacuuming system,   wherein the gas molecules are hydrogen molecules, neon molecules, argon molecules, krypton molecules or xenon molecules, and the vacuuming system includes a nonvolatile getter pump.

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