US2017075164A1PendingUtilityA1
Liquid crystal display and manufacturing method thereof
Est. expiryDec 9, 2033(~7.4 yrs left)· nominal 20-yr term from priority
G02F 1/1341G02F 2201/123G02F 1/133345G02F 2001/133368G02F 1/136286G02F 1/134309G02F 1/13394G02F 1/1368G02F 1/133377H10D 30/67G02F 1/1362G02F 1/1335G02F 1/133368
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Claims
Abstract
A liquid crystal display includes: a substrate; a thin film transistor disposed on the substrate; a pixel electrode connected to the thin film transistor; and a roof layer facing the pixel electrode. A plurality of microcavities are between the pixel electrode and the roof layer. A liquid crystal material is in the microcavities, and a dent is formed in the roof layer.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method for manufacturing a liquid crystal display, comprising:
forming a thin film transistor on a substrate; forming a pixel electrode connected to a terminal of the thin film transistor; forming a sacrificial layer on the pixel electrode; forming a roof layer on the sacrificial layer; forming a plurality of microcavities in which liquid crystal injection holes are formed by removing the sacrificial layer; injecting a liquid crystal material into the microcavities; and forming a capping layer on the roof layer and the liquid crystal injection holes, wherein a dent is formed in the roof layer.
2 . The method of claim 1 , wherein
the forming a sacrificial layer includes forming an opening at a part that overlaps a data line of the thin film transistor, and in the forming a roof layer, the roof layer fills the opening to form a partition wall forming part.
3 . The method of claim 2 , wherein
a liquid crystal injection hole forming region is formed between the microcavities, and the dent is formed in the liquid crystal injection hole forming region.
4 . The method of claim 3 , wherein
the dent is formed to overlap the partition wall forming part.
5 . The method of claim 4 , wherein
the partition wall forming part is formed in parallel with the data line of the thin film transistor.
6 . The method of claim 1 , wherein
when at least two microcavities neighboring each other from among the microcavities are set to be a first group, a pattern in which the dent is formed between neighboring first groups is repeated.
7 . The method of claim 1 , further comprising:
forming a lower insulating layer on the sacrificial layer; and forming an upper insulating layer on the roof layer, wherein the upper insulating layer is formed to cover the dent of the roof layer.
8 . The method of claim 7 , wherein
the dent passes through the roof layer to form an open region extending to the lower insulating layer, and the lower insulating layer is formed to contact the upper insulating layer in the open region.Join the waitlist — get patent alerts
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