US2017075164A1PendingUtilityA1

Liquid crystal display and manufacturing method thereof

Assignee: SAMSUNG DISPLAY CO LTDPriority: Dec 9, 2013Filed: Nov 23, 2016Published: Mar 16, 2017
Est. expiryDec 9, 2033(~7.4 yrs left)· nominal 20-yr term from priority
G02F 1/1341G02F 2201/123G02F 1/133345G02F 2001/133368G02F 1/136286G02F 1/134309G02F 1/13394G02F 1/1368G02F 1/133377H10D 30/67G02F 1/1362G02F 1/1335G02F 1/133368
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Claims

Abstract

A liquid crystal display includes: a substrate; a thin film transistor disposed on the substrate; a pixel electrode connected to the thin film transistor; and a roof layer facing the pixel electrode. A plurality of microcavities are between the pixel electrode and the roof layer. A liquid crystal material is in the microcavities, and a dent is formed in the roof layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for manufacturing a liquid crystal display, comprising:
 forming a thin film transistor on a substrate;   forming a pixel electrode connected to a terminal of the thin film transistor;   forming a sacrificial layer on the pixel electrode;   forming a roof layer on the sacrificial layer;   forming a plurality of microcavities in which liquid crystal injection holes are formed by removing the sacrificial layer;   injecting a liquid crystal material into the microcavities; and   forming a capping layer on the roof layer and the liquid crystal injection holes, wherein   a dent is formed in the roof layer.   
     
     
         2 . The method of  claim 1 , wherein
 the forming a sacrificial layer includes forming an opening at a part that overlaps a data line of the thin film transistor, and   in the forming a roof layer, the roof layer fills the opening to form a partition wall forming part.   
     
     
         3 . The method of  claim 2 , wherein
 a liquid crystal injection hole forming region is formed between the microcavities, and the dent is formed in the liquid crystal injection hole forming region.   
     
     
         4 . The method of  claim 3 , wherein
 the dent is formed to overlap the partition wall forming part.   
     
     
         5 . The method of  claim 4 , wherein
 the partition wall forming part is formed in parallel with the data line of the thin film transistor.   
     
     
         6 . The method of  claim 1 , wherein
 when at least two microcavities neighboring each other from among the microcavities are set to be a first group, a pattern in which the dent is formed between neighboring first groups is repeated.   
     
     
         7 . The method of  claim 1 , further comprising:
 forming a lower insulating layer on the sacrificial layer; and   forming an upper insulating layer on the roof layer, wherein   the upper insulating layer is formed to cover the dent of the roof layer.   
     
     
         8 . The method of  claim 7 , wherein
 the dent passes through the roof layer to form an open region extending to the lower insulating layer, and the lower insulating layer is formed to contact the upper insulating layer in the open region.

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