Semiconductor device, silicon wafer and method of manufacturing a silicon wafer

Abstract

A semiconductor device is provided that includes a silicon semiconductor body having a drift or base zone of net n-type doping. An n-type doping is partially compensated by 10% to 80% with p-type dopants. A net n-type doping concentration in the drift or base zone is in a range from 1×10 13 cm −3 to 1×10 15 cm −3 . A portion of 5% to 75% of the n-type doping is made up of hydrogen related donors.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a silicon semiconductor body comprising a drift or base zone of net n-type doping, wherein an n-type doping is partially compensated by 10% to 80% with p-type dopants, a net n-type doping concentration in the drift zone is in a range from 1×10 13  cm −3  to 1×10 15  cm −3 , and a portion of 5% to 75% of the n-type doping is made up of hydrogen related donors.   
     
     
         2 . The semiconductor device of  claim 1 , wherein a ratio of segregation coefficients of n-type dopants in the drift or base zone and p-type dopants in the drift or base zone is in a range of 0.25 and 4. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the n-type doping comprises phosphorus partially compensated by boron. 
     
     
         4 . The semiconductor device of  claim 3 , wherein the net n-type doping in the drift zone is further compensated by a p-type dopant species having a segregation coefficient smaller than phosphorus. 
     
     
         5 . The semiconductor device of  claim 3 , wherein the p-type dopant species corresponds to at least one of aluminum and gallium. 
     
     
         6 . The semiconductor device of  claim 4 , wherein a concentration ratio between boron and the at least one of aluminum and gallium is at least 2. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the net n-doping of the drift zone corresponds to a doping of a raw material of the silicon semiconductor body, and further comprising p-doped and n-doped regions having a net doping concentration greater than the net doping concentration in the drift zone. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the semiconductor device is one of an insulated gate bipolar transistor, a diode and an insulated gate field effect transistor. 
     
     
         9 . The semiconductor device of  claim 1 , wherein the semiconductor device is a vertical power semiconductor device comprising a first load terminal at a first surface of the semiconductor body and a second load terminal at a second surface opposite to the first surface. 
     
     
         10 . The semiconductor device of  claim 1 , wherein a variation of a profile of concentration of the hydrogen related donors along a vertical direction between opposite main surfaces of the semiconductor body is less than 80%. 
     
     
         11 . A silicon wafer, comprising a net n-type doping, wherein an n-type doping is partially compensated by 10% to 80% with p-type dopants, the net n-type doping concentration is in a range from 1×10 13  cm −3  to 1×10 15  cm −3 , and a portion of 5% to 75% of the n-type doping is made up of hydrogen related donors. 
     
     
         12 . The silicon wafer of  claim 11 , wherein the n-type doping comprises phosphorus partially compensated by boron. 
     
     
         13 . The silicon wafer of  claim 11 , wherein the net n-type doping is further compensated by a p-type dopant species having a segregation coefficient smaller than phosphorus. 
     
     
         14 . The silicon wafer of  claim 13 , wherein the p-type dopant species corresponds to at least one of aluminum and gallium. 
     
     
         15 . The silicon wafer of  claim 14 , wherein a concentration ratio between boron and the at least one of aluminum and gallium is at least 2.