Semiconductor Device and Method of Forming Interconnect Structure and Mounting Semiconductor Die in Recessed Encapsulant

Abstract

A semiconductor device has conductive pillars formed over a carrier. A first semiconductor die is mounted over the carrier between the conductive pillars. An encapsulant is deposited over the first semiconductor die and carrier and around the conductive pillars. A recess is formed in a first surface of the encapsulant over the first semiconductor die. The recess has sloped or stepped sides. A first interconnect structure is formed over the first surface of the encapsulant. The first interconnect structure follows a contour of the recess in the encapsulant. The carrier is removed. A second interconnect structure is formed over a second surface of the encapsulant and first semiconductor die. The first and second interconnect structures are electrically connected to the conductive pillars. A second semiconductor die is mounted in the recess. A third semiconductor die is mounted over the recess and second semiconductor die.

What is claimed: 
     
         1 . A semiconductor device, comprising:
 a first semiconductor die;   a first interconnect structure;   an encapsulant deposited over the first semiconductor die and first interconnect structure; and   a second interconnect structure disposed over the first semiconductor die, encapsulant, and first interconnect structure.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the first interconnect structure extends through the encapsulant. 
     
     
         3 . The semiconductor device of  claim 1 , further including a second semiconductor die disposed over the first semiconductor die with the second semiconductor die electrically connected to the second interconnect structure through the first interconnect structure. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the first semiconductor die includes an electrical component and a mechanical component. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the first interconnect structure includes a conductive pillar or conductive via. 
     
     
         6 . The semiconductor device of  claim 1 , further including a conductive layer formed over the first interconnect structure opposite the second interconnect structure. 
     
     
         7 . A semiconductor device, comprising:
 a first semiconductor die;   a first interconnect structure; and   an encapsulant deposited over the first semiconductor die, wherein the first interconnect structure extends through the encapsulant.   
     
     
         8 . The semiconductor device of  claim 7 , further including a first conductive layer formed over the first interconnect structure. 
     
     
         9 . The semiconductor device of  claim 8 , further including a second conductive layer electrically connected to the first conductive layer through the first interconnect structure. 
     
     
         10 . The semiconductor device of  claim 7 , further including a second interconnect structure disposed over the first semiconductor die, encapsulant, and first interconnect structure. 
     
     
         11 . The semiconductor device of  claim 7 , further including a second semiconductor die disposed over the first semiconductor die and electrically connected to the first interconnect structure. 
     
     
         12 . The semiconductor device of  claim 7 , wherein the first semiconductor die includes an electrical component and a mechanical component. 
     
     
         13 . The semiconductor device of  claim 7 , wherein the first interconnect structure includes a conductive pillar or conductive via. 
     
     
         14 . A semiconductor device, comprising:
 a first semiconductor die;   a first interconnect structure disposed adjacent to the first semiconductor die;   an encapsulant deposited over the first semiconductor die; and   a second interconnect structure disposed over the first semiconductor die.   
     
     
         15 . The semiconductor device of  claim 14 , wherein the first interconnect structure extends through the encapsulant. 
     
     
         16 . The semiconductor device of  claim 14 , further including a second semiconductor die disposed over the first interconnect structure. 
     
     
         17 . The semiconductor device of  claim 14 , wherein the first semiconductor die includes an electrical component and a mechanical component. 
     
     
         18 . The semiconductor device of  claim 14 , wherein the first interconnect structure includes a conductive pillar or conductive via. 
     
     
         19 . The semiconductor device of  claim 14 , further including a conductive layer formed over the first interconnect structure. 
     
     
         20 . A semiconductor device, comprising:
 a first semiconductor die;   a first interconnect structure disposed adjacent to the first semiconductor die; and   an encapsulant deposited over the first semiconductor die.   
     
     
         21 . The semiconductor device of  claim 20 , further including a second semiconductor die disposed over the first interconnect structure. 
     
     
         22 . The semiconductor device of  claim 20 , wherein the first interconnect structure includes a conductive pillar or conductive via. 
     
     
         23 . The semiconductor device of  claim 20 , further including a conductive layer formed over the first interconnect structure. 
     
     
         24 . The semiconductor device of  claim 20 , further including a second interconnect structure formed over the first semiconductor die. 
     
     
         25 . The semiconductor device of  claim 20 , wherein the first semiconductor die includes an electrical component and a mechanical component.