Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Abstract

In the present invention, the productivity of a processing apparatus including a plurality of process chambers is improved. There is provided a substrate processing apparatus including a plurality of process chambers, a process gas supply unit configured to supply a process gas into each of the plurality of process chambers, a purge gas supply unit configured to supply a purge gas into each of the plurality of process chambers, an exhaust unit configured to exhaust each of the plurality of process chambers and a control unit configured to control the process gas supply unit, the purge gas supply unit and the exhaust unit to supply the process gas into a first process chamber of the plurality of process chambers to which a substrate is transferred while supplying the purge gas into process chambers other than the first process chamber and exhausting the plurality of process chambers.

1 . A substrate processing apparatus comprising:
 where a first substrate is processed;   a second process chamber where a second substrate is processed;   a first substrate placement unit disposed in the first process chamber, the first substrate placement unit comprising a first substrate placement surface where the first substrate is placed;   a second substrate placement unit disposed in the second process chamber, the second substrate placement unit comprising a second substrate placement surface where the second substrate is placed;   a transfer robot configured to transfer the first substrate and the second substrate into the first process chamber and the second process chamber, respectively;   a process gas supply unit configured to supply a process gas into each of the first process chamber and the second process chamber;   a valve configured to open and close to control a flow of the process gas;   a first purge gas supply pipe configured to supply a purge gas into the first process chamber;   a second purge gas supply pip configured to supply a purge gas into the first second process chamber;   a purge gas supply unit configured to supply the purge gas into each of the first purge gas supply pipe and the second purge gas supply pipe;   a flow rate controller configured to control flow rates of the purge gas flowing through the first purge gas supply pipe and the second purge gas supply pipe;   a first exhaust pipe configured to exhaust the first process chamber;   a second exhaust pipe configured to exhaust the second process chamber;   an exhaust unit configured to exhaust an exhaust pipe connected to the first exhaust pipe and the second exhaust pipe;   a first conductance adjuster disposed at the first exhaust pipe;   a second conductance adjuster disposed at the second exhaust pipe; and   a control unit configured to control the process gas supply unit, the purge gas supply unit, the exhaust unit and the transfer robot to perform: (a) transferring only the first substrate into the first process chamber without transferring the second substrate into the second processing chamber; (b) supplying the process gas onto the first substrate in the first process chamber and exhausting the process gas from the first process chamber through the first exhaust pipe; and (c) supplying the purge gas onto the second substrate placement surface of the second substrate placement unit and adjusting a conductance of the first exhaust pipe to be equal to that of the second exhaust pipe while exhausting the purge gas from the second process chamber through the second exhaust pipe, wherein (b) and (c) are simultaneously performed after performing (a).   
     
     
         2 . (canceled) 
     
     
         3 . The substrate processing apparatus of  claim 1 , wherein the control unit is further configured to control the purge gas supply unit such that the flow rate of the purge gas is equal to a flow rate of the process gas. 
     
     
         4 . (canceled) 
     
     
         5 . The substrate processing apparatus of  claim 1 , further comprising a reactive gas supply unit configured to supply a reactive gas into each of the first process chamber and the second process chamber,
 wherein the control unit is further configured to control the process gas supply unit, the purge gas supply unit and the reactive gas supply unit to supply the purge gas onto the second substrate placement surface of the second substrate placement unit while sequentially supplying the process gas, the purge gas and the reactive gas onto the first substrate in the first process chamber.   
     
     
         6 - 16 . (canceled) 
     
     
         17 . The substrate processing apparatus of  claim 1 , further comprising:
 a transfer chamber where the transfer robot is disposed; and   a load lock chamber connected to the transfer chamber and capable of accommodating the first substrate and the second substrate,   wherein the transfer robot comprises: a first end effector and a second end effector configured to support the first substrate and the second substrate in a horizontal manner, respectively, and   the control unit is further configured to control the transfer robot and the process gas supply unit to: transfer the first substrate and the second substrate from the load lock chamber into the first process chamber and the second process chamber, respectively; and simultaneously supply the process gas into each of the first process chamber and the second process chamber.