US2017058393A1PendingUtilityA1

Conductive oxide film, display device, and method for forming conductive oxide film

Assignee: SEMICONDUCTOR ENERGY LABPriority: Sep 5, 2012Filed: Nov 3, 2016Published: Mar 2, 2017
Est. expirySep 5, 2032(~6.1 yrs left)· nominal 20-yr term from priority
G06F 3/045C23C 14/086C23C 14/5806G06F 3/0412G06F 3/0416G06F 3/044H01L 51/56C23C 14/34H01L 51/5203H01L 51/0021G02F 1/13338G06F 3/0445G06F 3/0444G06F 3/0446G06F 3/04166H01B 13/00G06F 2203/04103G02F 2201/121G02F 1/13306H01B 5/14G06F 2203/04104G06F 3/041G02F 2201/123Y02E10/50H10K 50/805H10K 71/60H10K 71/00
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Claims

Abstract

One embodiment of the present invention provides a conductive oxide film having high conductivity and high transmittance of visible light. The conductive oxide film having high conductivity and high transmittance of visible light can be obtained by forming a conductive oxide film at a high substrate temperature in the film formation and subjecting the conductive oxide film to nitrogen annealing treatment. The conductive oxide film has a crystal structure in which c-axes are aligned in a direction perpendicular to a surface of the film.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for forming a conductive oxide film comprising the steps of:
 forming a conductive oxide film over a substrate by a sputtering method at a substrate temperature of 200° C. or higher; and   performing nitrogen annealing treatment on the conductive oxide film.   
     
     
         2 . The method for forming a conductive oxide film according to  claim 1 , wherein the step of forming the conductive oxide film is performed in an atmosphere including an argon gas. 
     
     
         3 . The method for forming a conductive oxide film according to  claim 2 , wherein a percentage of the argon gas is more than or equal to 70%. 
     
     
         4 . The method for forming a conductive oxide film according to  claim 1 , wherein a temperature in the nitrogen annealing treatment is higher than or equal to 350° C.

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