Method for producing graphene oxide with tunable gap

Abstract

A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can be achieved. The resulting graphene oxide material is thus completely customizable and can be adapted to a plethora of useful engineering applications.

1 - 22 . (canceled) 
     
     
         23 . An sp2 structure graphene oxide material structure comprising:
 an sp2 structure graphene layer on a substrate, the sp2 structure graphene layer comprising defects and having a band gap based on the defects, and   wherein an oxygen-to-carbon atomic ratio of oxidization of sp2 structure graphene layer is no greater than 21%, with oxidation is confined to the graphene layer.   
     
     
         24 . The structure of  claim 23 , wherein at least one portion of the sp2 structure graphene layer is not oxidized. 
     
     
         25 . The structure of  claim 24 , wherein the sp2 structure graphene layer includes a plurality of oxidized graphene portions, each of said portions having a desired band gap. 
     
     
         26 . The structure of  claim 25 , wherein each of the portions have different band gaps. 
     
     
         27 . The structure of  claim 23 , wherein the band gap is proportional to the concentration of oxidation within the sp2 structure graphene layer. 
     
     
         28 . The structure of  claim 23 , wherein the band gap ranges from 0.1 to 2.5 eV, and wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is from about 9% to 21%. 
     
     
         29 . The structure of  claim 23 , wherein the substrate is a material selected from the group consisting of silicon, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide, an alloy of silicon and germanium, and indium phosphide.