Semiconductor Chip and Method for Manufacturing the Same

Abstract

A first conductive structure forms a gate electrode of a first transistor of a first transistor type. A second conductive structure forms gate electrodes of both a second transistor of the first transistor type and a first transistor of a second transistor type. A third conductive structure forms a gate electrode of a second transistor of the second transistor type. A fourth conductive structure forms gate electrodes of both a third transistor of the first transistor type and a third transistor of the second transistor type. Gate electrodes of the first and second transistors of the first transistor type are separated by a fixed pitch, as are the gate electrodes of the second and third transistors of the second transistor type. The gate electrodes of the first transistor of the first transistor type and the second transistor of the second transistor type are separated by at least the fixed pitch.

What is claimed is: 
     
         1 . A semiconductor chip, comprising:
 a region including a plurality of transistors, some of the plurality of transistors in the region forming part of circuitry associated with execution of one or more logic functions, the region including at least ten conductive structures formed within the semiconductor chip, some of the at least ten conductive structures forming at least one transistor gate electrode,   each of the at least ten conductive structures respectively having a corresponding top surface, wherein an entirety of a periphery of the corresponding top surface is defined by a corresponding first end, a corresponding second end, a corresponding first edge, and a corresponding second edge, such that a total distance along the entirety of the periphery of the corresponding top surface is equal to a sum of a total distance along the corresponding first edge and a total distance along the corresponding second edge and a total distance along the corresponding first end and a total distance along the corresponding second end,   wherein the total distance along the corresponding first edge is greater than two times the total distance along the corresponding first end,   wherein the total distance along the corresponding first edge is greater than two times the total distance along the corresponding second end,   wherein the total distance along the corresponding second edge is greater than two times the total distance along the corresponding first end,   wherein the total distance along the corresponding second edge is greater than two times the total distance along the corresponding second end,   wherein the corresponding first end extends from the corresponding first edge to the corresponding second edge and is located principally within a space between the corresponding first and second edges,   wherein the corresponding second end extends from the corresponding first edge to the corresponding second edge and is located principally within the space between the corresponding first and second edges,   the top surfaces of the at least ten conductive structures co-planar with each other,   each of the at least ten conductive structures having a corresponding lengthwise centerline oriented in a first direction along its top surface and extending from its first end to its second end,   each of the at least ten conductive structures having a length as measured along its lengthwise centerline from its first end to its second end,   wherein the first edge of each of the at least ten conductive structures is substantially straight,   wherein the second edge of each of the at least ten conductive structures is substantially straight,   each of the at least ten conductive structures having both its first edge and its second edge oriented substantially parallel to its lengthwise centerline,   each of the at least ten conductive structures having a width measured in a second direction perpendicular to the first direction at a midpoint of its lengthwise centerline, each of the first direction and the second direction oriented substantially parallel to the co-planar top surfaces of the at least ten conductive structures,   
       wherein the width of each of the at least ten conductive structures is less than 45 nanometers, the region having a size of about 965 nanometers as measured in the second direction, each of the at least ten conductive structures positioned such that a distance as measured in the second direction between its lengthwise centerline and the lengthwise centerline of at least one other of the at least ten conductive structures is substantially equal to a first pitch that is less than or equal to about 193 nanometers,
 wherein the at least ten conductive structures includes a first conductive structure, the first conductive structure including a portion that forms a gate electrode of a first transistor of a first transistor type, wherein any transistor having its gate electrode formed by the first conductive structure is of the first transistor type, 
 wherein the at least ten conductive structures includes a second conductive structure, the second conductive structure including a portion that forms a gate electrode of a second transistor of the first transistor type, the second conductive structure also including a portion that forms a gate electrode of a first transistor of a second transistor type, the second conductive structure positioned such that lengthwise centerlines of the first and second conductive structures are separated from each other by the first pitch as measured in the second direction, 
 wherein the at least ten conductive structures includes a third conductive structure, the third conductive structure including a portion that forms a gate electrode of a second transistor of the second transistor type, wherein any transistor having its gate electrode formed by the third conductive structure is of the second transistor type, the third conductive structure positioned such that lengthwise centerlines of the first and third conductive structures are separated from each other by a distance as measured in the second direction of at least the first pitch, 
 wherein the at least ten conductive structures includes a fourth conductive structure, the fourth conductive structure including a portion that forms a gate electrode of a third transistor of the first transistor type, the fourth conductive structure also including a portion that forms a gate electrode of a third transistor of the second transistor type, the fourth conductive structure positioned such that lengthwise centerlines of the third and fourth conductive structures are separated from each other by the first pitch as measured in the second direction, 
 wherein a length of the first conductive structure as measured along its lengthwise centerline between its first and second ends is different than a length of the third conductive structure as measured along its lengthwise centerline between its first and second ends, 
 wherein the first transistor of the first transistor type includes a first diffusion terminal, and wherein the second transistor of the second transistor type includes a first diffusion terminal, and wherein the first diffusion terminal of the first transistor of the first transistor type is electrically connected to the first diffusion terminal of the second transistor of the second transistor type through a first electrical connection, 
 wherein the first electrical connection includes one or more overlying interconnect conductive structures formed at a respective vertical position within the semiconductor chip overlying some of the at least ten conductive structures so as to be separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material, 
 wherein at least one of the one or more overlying interconnect conductive structures of the first electrical connection is a restricted shape interconnect conductive structure, the restricted shape interconnect conductive structure having a respective top surface with an entirety of a periphery of its respective top surface defined by a corresponding first end, a corresponding second end, a corresponding first edge, and a corresponding second edge, such that a total distance along the entirety of the periphery of its respective top surface is equal to a sum of a total distance along the corresponding first edge and a total distance along the corresponding second edge and a total distance along the corresponding first end and a total distance along the corresponding second end, 
 wherein the restricted shape interconnect conductive structure has its respective top surface formed with the total distance along the corresponding first edge greater than two times the total distance along the corresponding first end and greater than two times the total distance along the corresponding second end, 
 wherein the restricted shape interconnect conductive structure has its respective top surface formed with the corresponding second edge greater than two times the total distance along the corresponding first end and greater than two times the total distance along the corresponding second end, 
 wherein the restricted shape interconnect conductive structure has its respective top surface formed with the corresponding first end extending from the corresponding first edge to the corresponding second edge and with the corresponding first end located principally within a space between the corresponding first edge and the corresponding second edge, 
 wherein the restricted shape interconnect conductive structure has its respective top surface formed with the corresponding second end extending from the corresponding first edge to the corresponding second edge and with the corresponding second end located principally within a space between the corresponding first edge and the corresponding second edge, 
 wherein the restricted shape interconnect conductive structure has a respective lengthwise centerline oriented along its respective top surface to extend from its corresponding first end to its corresponding second end, with each of the corresponding first edge and the corresponding second edge being substantially straight and oriented substantially parallel to its respective lengthwise centerline, 
 wherein each transistor of the first transistor type having its gate electrode formed by any of the at least ten conductive structures is included in a first collection of transistors, and wherein each transistor of the second transistor type having its gate electrode formed by any of the at least ten conductive structures is included in a second collection of transistors, wherein the first collection of transistors is separated from the second collection of transistors by an inner sub-region of the region, wherein the inner sub-region does not include a source or a drain of any transistor. 
 
     
     
         2 . The semiconductor chip as recited in  claim 1 , wherein the first electrical connection includes at least two restricted shape interconnect conductive structures respectively positioned at different vertical positions within the semiconductor chip overlying some of the at least ten conductive structures, wherein at least one dielectric material is present between the different vertical positions of the at least two restricted shape interconnect conductive structures. 
     
     
         3 . The semiconductor chip as recited in  claim 2 , wherein the first electrical connection includes a first restricted shape interconnect conductive structure positioned at a first vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the first restricted shape interconnect conductive structure separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material,
 wherein the first electrical connection includes a second restricted shape interconnect conductive structure positioned at the first vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the second restricted shape interconnect conductive structure separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material,   wherein the first and second restricted shape interconnect structures are positioned to have their lengthwise centerlines oriented in the second direction,   wherein the first electrical connection includes a third restricted shape interconnect conductive structure positioned at a second vertical position within the semiconductor chip overlying some of the at least ten conductive structures, wherein the second vertical position within the semiconductor chip is separated from the first vertical position within the semiconductor chip by at least one dielectric material,   wherein the third restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction.   
     
     
         4 . The semiconductor chip as recited in  claim 3 , further comprising:
 a fourth restricted shape interconnect conductive structure positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures,   wherein the fourth restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction,   wherein the fourth restricted shape interconnect structure is positioned such that lengthwise centerlines of the third and fourth restricted shape interconnect structures are separated from each other by the first pitch as measured in the second direction.   
     
     
         5 . The semiconductor chip as recited in  claim 4 , further comprising:
 a fifth restricted shape interconnect conductive structure positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures,   wherein the fifth restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction,   wherein the fifth restricted shape interconnect structure is positioned such that lengthwise centerlines of the fourth and fifth restricted shape interconnect structures are separated from each other by the first pitch as measured in the second direction.   
     
     
         6 . The semiconductor chip as recited in  claim 5 , further comprising:
 a first pair of restricted shape interconnect conductive structures positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the first pair of restricted shape interconnect conductive structures positioned to have their lengthwise centerlines substantially aligned and oriented in the first direction, the first pair of restricted shape interconnect conductive structures positioned in an end-facing manner with their facing ends separated by a first end-to-end spacing as measured in the first direction; and   a second pair of restricted shape interconnect conductive structures positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the second pair of restricted shape interconnect conductive structures positioned to have their lengthwise centerlines substantially aligned and oriented in the first direction, the second pair of restricted shape interconnect conductive structures positioned in an end-facing manner with their facing ends separated by the first end-to-end spacing as measured in the first direction.   
     
     
         7 . The semiconductor chip as recited in  claim 6 , wherein the second vertical position within the semiconductor chip is farther away from the top surfaces of the at least ten conductive structures than the first vertical position within the semiconductor chip. 
     
     
         8 . The semiconductor chip as recited in  claim 1 , further comprising:
 at least one overlying interconnect conductive structure formed at a first vertical position within the semiconductor chip overlying some of the at least ten conductive structures so as to be separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material;   at least one overlying interconnect conductive structure formed at a second vertical position within the semiconductor chip overlying some of the at least ten conductive structures so as to be separated from the at least one overlying interconnect conductive structure formed at the first vertical position by at least one dielectric material;   at least one overlying interconnect conductive structure formed at a third vertical position within the semiconductor chip overlying some of the at least ten conductive structures so as to be separated from the at least one overlying interconnect conductive structure formed at the second vertical position by at least one dielectric material,   wherein the at least one overlying interconnect conductive structure formed at the third vertical position within the semiconductor chip includes a plurality of restricted shape interconnect conductive structures positioned to have their lengthwise centerlines oriented in the second direction,   wherein some of the plurality of restricted shape interconnect conductive structures are positioned to have their lengthwise centerlines separated from each other by a second pitch as measured in the first direction.   
     
     
         9 . The semiconductor chip as recited in  claim 8 , wherein the region includes at least one additional electrical connection in other than the first electrical connection, the at least one additional electrical connection including at least one restricted shape interconnect conductive structure formed at either the first vertical position within the semiconductor chip, or the second vertical position within the semiconductor chip, or both the first and second vertical positions within the semiconductor chip. 
     
     
         10 . The semiconductor chip as recited in  claim 9 , wherein the region includes a fourth transistor of the first transistor type and a fourth transistor of the second transistor type, wherein a gate electrode of the fourth transistor of the first transistor type is electrically connected to a gate electrode of the fourth transistor of the second transistor type through a second electrical connection,
 wherein the second electrical connection includes one or more restricted shape interconnect conductive structures formed at a respective vertical position within the semiconductor chip overlying some of the at least ten conductive structures so as to be separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material.   
     
     
         11 . The semiconductor chip as recited in  claim 10 , wherein the first electrical connection includes a first restricted shape interconnect conductive structure positioned at a first vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the first restricted shape interconnect conductive structure separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material,
 wherein the first electrical connection includes a second restricted shape interconnect conductive structure positioned at the first vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the second restricted shape interconnect conductive structure separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material,   wherein the first and second restricted shape interconnect structures are positioned to have their lengthwise centerlines oriented in the second direction,   wherein the first electrical connection includes a third restricted shape interconnect conductive structure positioned at a second vertical position within the semiconductor chip overlying some of the at least ten conductive structures, wherein the second vertical position within the semiconductor chip is separated from the first vertical position within the semiconductor chip by at least one dielectric material,   wherein the third restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction.   
     
     
         12 . The semiconductor chip as recited in  claim 11 , further comprising:
 a fourth restricted shape interconnect conductive structure positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures,   wherein the fourth restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction,   wherein the fourth restricted shape interconnect structure is positioned such that lengthwise centerlines of the third and fourth restricted shape interconnect structures are separated from each other by the first pitch as measured in the second direction.   
     
     
         13 . The semiconductor chip as recited in  claim 12 , further comprising:
 a fifth restricted shape interconnect conductive structure positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures,   wherein the fifth restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction,   wherein the fifth restricted shape interconnect structure is positioned such that lengthwise centerlines of the fourth and fifth restricted shape interconnect structures are separated from each other by the first pitch as measured in the second direction.   
     
     
         14 . The semiconductor chip as recited in  claim 1 , wherein the region includes a fourth transistor of the first transistor type and a fourth transistor of the second transistor type, wherein the fourth transistor of the first transistor type includes a first diffusion terminal electrically connected to the first diffusion terminal of the first transistor of the first transistor type, and wherein the fourth transistor of the second transistor type includes a first diffusion terminal electrically connected to the first diffusion terminal of the second transistor of the second transistor type,
 wherein the fourth transistor of the first transistor type has a gate electrode formed by one of the at least ten conductive structures that is positioned with its lengthwise centerline separated from the lengthwise centerline of the first conductive structure by the first pitch as measured in the second direction,   wherein the fourth transistor of the second transistor type has a gate electrode formed by one of the at least ten conductive structures that is positioned with its lengthwise centerline separated from the lengthwise centerline of the third conductive structure by the first pitch as measured in the second direction.   
     
     
         15 . The semiconductor chip as recited in  claim 14 , wherein the first transistor of the first transistor type includes a second diffusion terminal, and wherein the second transistor of the first transistor type includes a first diffusion terminal electrically connected to the second diffusion terminal of the first transistor of the first transistor type,
 wherein the second transistor of the second transistor type includes a second diffusion terminal, and wherein the third transistor of the second transistor type includes a first diffusion terminal electrically connected to the second diffusion terminal of the second transistor of the second transistor type,   wherein the fourth transistor of the first transistor type includes a second diffusion terminal, and wherein the third transistor of the first transistor type includes a first diffusion terminal electrically connected to the second diffusion terminal of the fourth transistor of the first transistor type,   wherein the fourth transistor of the second transistor type includes a second diffusion terminal, and wherein the first transistor of the second transistor type includes a first diffusion terminal electrically connected to the second diffusion terminal of the fourth transistor of the second transistor type.   
     
     
         16 . The semiconductor chip as recited in  claim 15 , wherein the gate electrode of the fourth transistor of the first transistor type is electrically connected to the gate electrode of the fourth transistor of the second transistor type through a second electrical connection,
 wherein the second electrical connection includes one or more restricted shape interconnect conductive structures formed at a respective vertical position within the semiconductor chip overlying some of the at least ten conductive structures so as to be separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material.   
     
     
         17 . The semiconductor chip as recited in  claim 16 , wherein the first electrical connection includes a first restricted shape interconnect conductive structure positioned at a first vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the first restricted shape interconnect conductive structure separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material,
 wherein the first electrical connection includes a second restricted shape interconnect conductive structure positioned at the first vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the second restricted shape interconnect conductive structure separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material,   wherein the first and second restricted shape interconnect structures are positioned to have their lengthwise centerlines oriented in the second direction,   wherein the first electrical connection includes a third restricted shape interconnect conductive structure positioned at a second vertical position within the semiconductor chip overlying some of the at least ten conductive structures, wherein the second vertical position within the semiconductor chip is separated from the first vertical position within the semiconductor chip by at least one dielectric material,   wherein the third restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction.   
     
     
         18 . The semiconductor chip as recited in  claim 17 , further comprising:
 a fourth restricted shape interconnect conductive structure positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures,   wherein the fourth restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction,   wherein the fourth restricted shape interconnect structure is positioned such that lengthwise centerlines of the third and fourth restricted shape interconnect structures are separated from each other by the first pitch as measured in the second direction.   
     
     
         19 . The semiconductor chip as recited in  claim 18 , further comprising:
 a fifth restricted shape interconnect conductive structure positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures,   wherein the fifth restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction,   wherein the fifth restricted shape interconnect structure is positioned such that lengthwise centerlines of the fourth and fifth restricted shape interconnect structures are separated from each other by the first pitch as measured in the second direction.   
     
     
         20 . The semiconductor chip as recited in  claim 19 , further comprising:
 a first pair of restricted shape interconnect conductive structures positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the first pair of restricted shape interconnect conductive structures positioned to have their lengthwise centerlines substantially aligned and oriented in the first direction, the first pair of restricted shape interconnect conductive structures positioned in an end-facing manner with their facing ends separated by a first end-to-end spacing as measured in the first direction; and   a second pair of restricted shape interconnect conductive structures positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the second pair of restricted shape interconnect conductive structures positioned to have their lengthwise centerlines substantially aligned and oriented in the first direction, the second pair of restricted shape interconnect conductive structures positioned in an end-facing manner with their facing ends separated by the first end-to-end spacing as measured in the first direction.   
     
     
         21 . The semiconductor chip as recited in  claim 1 , wherein the region includes a fourth transistor of the first transistor type and a fourth transistor of the second transistor type, wherein a gate electrode of the fourth transistor of the first transistor type is electrically connected to a gate electrode of the fourth transistor of the second transistor type through a second electrical connection,
 wherein the second electrical connection includes one or more restricted shape interconnect conductive structures formed at a respective vertical position within the semiconductor chip overlying some of the at least ten conductive structures so as to be separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material.   
     
     
         22 . The semiconductor chip as recited in  claim 21 , wherein the first electrical connection includes at least two restricted shape interconnect conductive structures respectively positioned at different vertical positions within the semiconductor chip overlying some of the at least ten conductive structures, wherein at least one dielectric material is present between the different vertical positions of the at least two restricted shape interconnect conductive structures. 
     
     
         23 . The semiconductor chip as recited in  claim 22 , wherein the first electrical connection includes a first restricted shape interconnect conductive structure positioned at a first vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the first restricted shape interconnect conductive structure separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material,
 wherein the first electrical connection includes a second restricted shape interconnect conductive structure positioned at the first vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the second restricted shape interconnect conductive structure separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material,   wherein the first and second restricted shape interconnect structures are positioned to have their lengthwise centerlines oriented in the second direction,   wherein the first electrical connection includes a third restricted shape interconnect conductive structure positioned at a second vertical position within the semiconductor chip overlying some of the at least ten conductive structures, wherein the second vertical position within the semiconductor chip is separated from the first vertical position within the semiconductor chip by at least one dielectric material,   wherein the third restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction.   
     
     
         24 . The semiconductor chip as recited in  claim 23 , further comprising:
 a fourth restricted shape interconnect conductive structure positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures,   wherein the fourth restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction,   wherein the fourth restricted shape interconnect structure is positioned such that lengthwise centerlines of the third and fourth restricted shape interconnect structures are separated from each other by the first pitch as measured in the second direction.   
     
     
         25 . The semiconductor chip as recited in  claim 24 , further comprising:
 a fifth restricted shape interconnect conductive structure positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures,   wherein the fifth restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction,   wherein the fifth restricted shape interconnect structure is positioned such that lengthwise centerlines of the fourth and fifth restricted shape interconnect structures are separated from each other by the first pitch as measured in the second direction.   
     
     
         26 . The semiconductor chip as recited in  claim 25 , further comprising:
 a first pair of restricted shape interconnect conductive structures positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the first pair of restricted shape interconnect conductive structures positioned to have their lengthwise centerlines substantially aligned and oriented in the first direction, the first pair of restricted shape interconnect conductive structures positioned in an end-facing manner with their facing ends separated by a first end-to-end spacing as measured in the first direction; and   a second pair of restricted shape interconnect conductive structures positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the second pair of restricted shape interconnect conductive structures positioned to have their lengthwise centerlines substantially aligned and oriented in the first direction, the second pair of restricted shape interconnect conductive structures positioned in an end-facing manner with their facing ends separated by the first end-to-end spacing as measured in the first direction.   
     
     
         27 . The semiconductor chip as recited in  claim 26 , wherein the second vertical position within the semiconductor chip is farther away from the top surfaces of the at least ten conductive structures than the first vertical position within the semiconductor chip. 
     
     
         28 . The semiconductor chip as recited in  claim 27 , wherein one-half the length of the second conductive structure as measured along its lengthwise centerline from its first end to its second end is less than the length of the first conductive structure as measured along its lengthwise centerline from its first end to its second end, or
 wherein one-half the length of the second conductive structure as measured along its lengthwise centerline from its first end to its second end is less than the length of the third conductive structure as measured along its lengthwise centerline from its first end to its second end.   
     
     
         29 . A method for manufacturing an integrated circuit within a semiconductor chip, comprising:
 forming a plurality of transistors within a region of the semiconductor chip, some of the plurality of transistors in the region forming part of circuitry associated with execution of one or more logic functions, the plurality of transistors having respective gate electrodes formed by some of at least ten conductive structures present within the region,   wherein forming the plurality of transistors includes forming each of the at least ten conductive structures to respectively have a corresponding top surface, wherein an entirety of a periphery of the corresponding top surface is defined by a corresponding first end, a corresponding second end, a corresponding first edge, and a corresponding second edge, such that a total distance along the entirety of the periphery of the corresponding top surface is equal to a sum of a total distance along the corresponding first edge and a total distance along the corresponding second edge and a total distance along the corresponding first end and a total distance along the corresponding second end,   wherein the total distance along the corresponding first edge is greater than two times the total distance along the corresponding first end,   wherein the total distance along the corresponding first edge is greater than two times the total distance along the corresponding second end,   wherein the total distance along the corresponding second edge is greater than two times the total distance along the corresponding first end,   wherein the total distance along the corresponding second edge is greater than two times the total distance along the corresponding second end,   wherein the corresponding first end extends from the corresponding first edge to the corresponding second edge and is located principally within a space between the corresponding first and second edges,   wherein the corresponding second end extends from the corresponding first edge to the corresponding second edge and is located principally within the space between the corresponding first and second edges,   the top surfaces of the at least ten conductive structures co-planar with each other,   wherein forming the plurality of transistors includes forming each of the at least ten conductive structures to respectively have a corresponding lengthwise centerline oriented in a first direction along its top surface and extending from its first end to its second end,   each of the at least ten conductive structures having a length as measured along its lengthwise centerline from its first end to its second end,   wherein the first edge of each of the at least ten conductive structures is substantially straight,   wherein the second edge of each of the at least ten conductive structures is substantially straight,   each of the at least ten conductive structures having both its first edge and its second edge oriented substantially parallel to its lengthwise centerline,   each of the at least ten conductive structures having a width measured in a second direction perpendicular to the first direction at a midpoint of its lengthwise centerline,   each of the first direction and the second direction oriented substantially parallel to the co-planar top surfaces of the at least ten conductive structures,   
       wherein the width of each of the at least ten conductive structures is less than 45 nanometers, the region having a size of about 965 nanometers as measured in the second direction, each of the at least ten conductive structures positioned such that a distance as measured in the second direction between its lengthwise centerline and the lengthwise centerline of at least one other of the at least ten conductive structures is substantially equal to a first pitch that is less than or equal to about 193 nanometers,
 wherein the at least ten conductive structures includes a first conductive structure, the first conductive structure including a portion that forms a gate electrode of a first transistor of a first transistor type, wherein any transistor having its gate electrode formed by the first conductive structure is of the first transistor type, 
 wherein the at least ten conductive structures includes a second conductive structure, the second conductive structure including a portion that forms a gate electrode of a second transistor of the first transistor type, the second conductive structure also including a portion that forms a gate electrode of a first transistor of a second transistor type, the second conductive structure positioned such that lengthwise centerlines of the first and second conductive structures are separated from each other by the first pitch as measured in the second direction, 
 wherein the at least ten conductive structures includes a third conductive structure, the third conductive structure including a portion that forms a gate electrode of a second transistor of the second transistor type, wherein any transistor having its gate electrode formed by the third conductive structure is of the second transistor type, the third conductive structure positioned such that lengthwise centerlines of the first and third conductive structures are separated from each other by a distance as measured in the second direction of at least the first pitch, 
 wherein the at least ten conductive structures includes a fourth conductive structure, the fourth conductive structure including a portion that forms a gate electrode of a third transistor of the first transistor type, the fourth conductive structure also including a portion that forms a gate electrode of a third transistor of the second transistor type, the fourth conductive structure positioned such that lengthwise centerlines of the third and fourth conductive structures are separated from each other by the first pitch as measured in the second direction, 
 wherein a length of the first conductive structure as measured along its lengthwise centerline between its first and second ends is different than a length of the third conductive structure as measured along its lengthwise centerline between its first and second ends, 
 wherein the first transistor of the first transistor type includes a first diffusion terminal, and wherein the second transistor of the second transistor type includes a first diffusion terminal, 
 wherein each transistor of the first transistor type having its gate electrode formed by any of the at least ten conductive structures is included in a first collection of transistors, and wherein each transistor of the second transistor type having its gate electrode formed by any of the at least ten conductive structures is included in a second collection of transistors, wherein the first collection of transistors is separated from the second collection of transistors by an inner sub-region of the region, wherein the inner sub-region does not include a source or a drain of any transistor; and 
 forming a first electrical connection to electrically connect the first diffusion terminal of the first transistor of the first transistor type to the first diffusion terminal of the second transistor of the second transistor type, 
 wherein the first electrical connection includes one or more overlying interconnect conductive structures formed at a respective vertical position within the semiconductor chip overlying some of the at least ten conductive structures so as to be separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material, 
 wherein at least one of the one or more overlying interconnect conductive structures of the first electrical connection is a restricted shape interconnect conductive structure, the restricted shape interconnect conductive structure having a respective top surface with an entirety of a periphery of its respective top surface defined by a corresponding first end, a corresponding second end, a corresponding first edge, and a corresponding second edge, such that a total distance along the entirety of the periphery of its respective top surface is equal to a sum of a total distance along the corresponding first edge and a total distance along the corresponding second edge and a total distance along the corresponding first end and a total distance along the corresponding second end, 
 wherein the restricted shape interconnect conductive structure has its respective top surface formed with the total distance along the corresponding first edge greater than two times the total distance along the corresponding first end and greater than two times the total distance along the corresponding second end, 
 wherein the restricted shape interconnect conductive structure has its respective top surface formed with the corresponding second edge greater than two times the total distance along the corresponding first end and greater than two times the total distance along the corresponding second end, 
 wherein the restricted shape interconnect conductive structure has its respective top surface formed with the corresponding first end extending from the corresponding first edge to the corresponding second edge and with the corresponding first end located principally within a space between the corresponding first edge and the corresponding second edge, 
 wherein the restricted shape interconnect conductive structure has its respective top surface formed with the corresponding second end extending from the corresponding first edge to the corresponding second edge and with the corresponding second end located principally within a space between the corresponding first edge and the corresponding second edge, 
 wherein the restricted shape interconnect conductive structure has a respective lengthwise centerline oriented along its respective top surface to extend from its corresponding first end to its corresponding second end, with each of the corresponding first edge and the corresponding second edge being substantially straight and oriented substantially parallel to its respective lengthwise centerline. 
 
     
     
         30 . The method as recited in  claim 29 , wherein forming the first electrical connection includes forming at least two restricted shape interconnect conductive structures respectively positioned at different vertical positions within the semiconductor chip overlying some of the at least ten conductive structures, wherein at least one dielectric material is present between the different vertical positions of the at least two restricted shape interconnect conductive structures,
 wherein forming the first electrical connection includes forming a first restricted shape interconnect conductive structure positioned at a first vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the first restricted shape interconnect conductive structure separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material,   wherein forming the first electrical connection includes forming a second restricted shape interconnect conductive structure positioned at the first vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the second restricted shape interconnect conductive structure separated from the co-planar top surfaces of the at least ten conductive structures by at least one dielectric material,   wherein the first and second restricted shape interconnect structures are positioned to have their lengthwise centerlines oriented in the second direction,   wherein forming the first electrical connection includes forming a third restricted shape interconnect conductive structure positioned at a second vertical position within the semiconductor chip overlying some of the at least ten conductive structures, wherein the second vertical position within the semiconductor chip is separated from the first vertical position within the semiconductor chip by at least one dielectric material,   wherein the third restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction,   wherein the method also includes forming a fourth restricted shape interconnect conductive structure positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures,   wherein the fourth restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction,   wherein the fourth restricted shape interconnect structure is positioned such that lengthwise centerlines of the third and fourth restricted shape interconnect structures are separated from each other by the first pitch as measured in the second direction,   wherein the method also includes forming a fifth restricted shape interconnect conductive structure positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures,   wherein the fifth restricted shape interconnect structure is positioned to have its lengthwise centerline oriented in the first direction,   wherein the fifth restricted shape interconnect structure is positioned such that lengthwise centerlines of the fourth and fifth restricted shape interconnect structures are separated from each other by the first pitch as measured in the second direction,   wherein the method also includes forming a first pair of restricted shape interconnect conductive structures positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the first pair of restricted shape interconnect conductive structures positioned to have their lengthwise centerlines substantially aligned and oriented in the first direction, the first pair of restricted shape interconnect conductive structures positioned in an end-facing manner with their facing ends separated by a first end-to-end spacing as measured in the first direction, and   wherein the method also includes forming a second pair of restricted shape interconnect conductive structures positioned at the second vertical position within the semiconductor chip overlying some of the at least ten conductive structures, the second pair of restricted shape interconnect conductive structures positioned to have their lengthwise centerlines substantially aligned and oriented in the first direction, the second pair of restricted shape interconnect conductive structures positioned in an end-facing manner with their facing ends separated by the first end-to-end spacing as measured in the first direction.