Input-Output Device and Method for Driving Input-Output Device

Abstract

Accuracy of photodetection is improved. An input-output device includes a light unit including Z (Z is a natural number of 3 or more) first light-emitting diodes that emit light with a wavelength in a visible light range and a second light-emitting diode that emits light with a wavelength in an infrared range; a display circuit that is supplied with a display selection signal, supplied with a display data signal in accordance with the display selection signal, and set to be in a display state based on data of the input display data signal; and Y (Y is a natural number) photodetectors including a filter for absorbing light with a wavelength in a visible light range, supplied with a photodetection control signal is input, and generating data based on the illuminance of incident light in accordance with the input photodetection control signal.

1 . (canceled) 
     
     
         2 . A display device with an infrared optical sensor comprising:
 a light unit comprising a first light-emitting diode that emits light with a wavelength in a visible light range and a second light-emitting diode that emits light with a wavelength in an infrared range;   a plurality of display circuits overlapping with the light unit; and   a plurality of photodetectors overlapping with the light unit,   wherein the plurality of photodetectors include a filter for absorbing light with a wavelength in a visible light range,   wherein the second light-emitting diode is configured not to emit light when the first light-emitting diode emits light,   wherein the plurality of display circuits are configured to receive a display selection signal, to receive a display data signal in accordance with the display selection signal, and to set a display state in accordance with the display data signal, and   wherein the plurality of photodetectors are configured to generate data based on illuminance of incident light.   
     
     
         3 . The display device according to  claim 2 ,
 wherein each of the plurality of photodetectors comprises a first transistor, a second transistor and a photoelectric conversion element,   wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the photoelectric conversion element,   wherein a gate of the second transistor is electrically connected to the other of the source electrode and the drain electrode of the first transistor,   wherein the photoelectric conversion element comprises a first conductive layer, a semiconductor layer over the first conductive layer and a second conductive layer over the semiconductor layer,   wherein the semiconductor layer comprises a silicon layer,   wherein one of the source electrode and the drain electrode of the first transistor is electrically connected to the second conductive layer,   wherein the first transistor and the second transistor are field effect transistors, and   wherein the photoelectric conversion element is configured to supply current between the first conductive layer and the second conductive layer in accordance with the illuminance of the incident light.   
     
     
         4 . The display device according to  claim 3 ,
 wherein the first transistor comprises an oxide semiconductor layer,   wherein the source electrode and the drain electrode of the first transistor are over and in contact with the oxide semiconductor layer,   wherein the oxide semiconductor layer comprises an intrinsic or substantially intrinsic oxide semiconductor, and   wherein the oxide semiconductor layer has a carrier concentration of lower than 1×10 14 /cm 3 .   
     
     
         5 . The display device according to  claim 2 , further comprising:
 a reading circuit configured to read the data based on the illuminance of the incident light supplied from the plurality of photodetectors; and   a data processing circuit configured to generate difference data between two pieces of data based on the illuminance of the incident light.   
     
     
         6 . The display device according to  claim 3 ,
 wherein the source electrode, the drain electrode and the first conductive layer are over and in contact with a first insulating layer, and   wherein a second insulating layer is provided so as to be in contact with an oxide semiconductor layer and the first conductive layer.   
     
     
         7 . The display device according to  claim 3 ,
 wherein an off-state current of the first transistor per micrometer of channel width is between 100 yA and about 10 −30  A.   
     
     
         8 . A display device with an infrared optical sensor comprising:
 a first light unit comprising a first light-emitting diode that emits light with a wavelength in a visible light range;   a second light unit comprising a second light-emitting diode that emits light with a wavelength in an infrared range;   a plurality of display circuits provided between the first light unit and the second light unit; and   a plurality of photodetectors provided between the first light unit and the second light unit,   wherein the plurality of photodetectors include a filter for absorbing light with a wavelength in a visible light range,   wherein the second light-emitting diode is configured not to emit light when the first light-emitting diode emits light,   wherein the plurality of display circuits are configured to receive a display selection signal, to receive a display data signal in accordance with the display selection signal, and to set a display state in accordance with the display data signal, and   wherein the plurality of photodetectors are configured to generate data based on illuminance of incident light.   
     
     
         9 . The display device according to  claim 8 ,
 wherein each of the plurality of photodetectors comprises a first transistor, a second transistor and a photoelectric conversion element,   wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the photoelectric conversion element,   wherein a gate of the second transistor is electrically connected to the other of the source electrode and the drain electrode of the first transistor,   wherein the photoelectric conversion element comprises a first conductive layer, a semiconductor layer over the first conductive layer and a second conductive layer over the semiconductor layer,   wherein the semiconductor layer comprises a silicon layer,   wherein one of the source electrode and the drain electrode of the first transistor is electrically connected to the second conductive layer,   wherein the first transistor and the second transistor are field effect transistors, and   wherein the photoelectric conversion element is configured to supply current between the first conductive layer and the second conductive layer in accordance with the illuminance of the incident light.   
     
     
         10 . The display device according to  claim 9 ,
 wherein the first transistor comprises an oxide semiconductor layer,   wherein the source electrode and the drain electrode of the first transistor are over and in contact with the oxide semiconductor layer,   wherein the oxide semiconductor layer comprises an intrinsic or substantially intrinsic oxide semiconductor, and   wherein the oxide semiconductor layer has a carrier concentration of lower than 1×10 14 /cm 3 .   
     
     
         11 . The display device according to  claim 8 , further comprising:
 a reading circuit configured to read the data based on the illuminance of the incident light supplied from the plurality of photodetectors; and   a data processing circuit configured to generate difference data between two pieces of data based on the illuminance of the incident light.   
     
     
         12 . The display device according to  claim 9 ,
 wherein the source electrode, the drain electrode and the first conductive layer are over and in contact with a first insulating layer, and   wherein a second insulating layer is provided so as to be in contact with an oxide semiconductor layer and the first conductive layer.   
     
     
         13 . The display device according to  claim 9 ,
 wherein an off-state current of the first transistor per micrometer of channel width is 100 yA or less and about 10 −30  A or more.   
     
     
         14 . A display device with an infrared optical sensor comprising:
 a first light-emitting diode that emits light with a wavelength in a visible light range,   a second light-emitting diode that emits light with a wavelength in an infrared range;   a plurality of display circuits overlapping with the second light-emitting diode; and   a plurality of photodetectors overlapping with the second light-emitting diode,   wherein the plurality of photodetectors include a filter for absorbing light with a wavelength in a visible light range,   wherein the second light-emitting diode is configured not to emit light when the first light-emitting diode emits light,   wherein the plurality of display circuits are configured to receive a display selection signal, to receive a display data signal in accordance with the display selection signal, and to set a display state in accordance with the display data signal, and   wherein the plurality of photodetectors are configured to generate data based on illuminance of incident light.   
     
     
         15 . The display device according to  claim 14 ,
 wherein each of the plurality of photodetectors comprises a first transistor, a second transistor and a photoelectric conversion element,   wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the photoelectric conversion element,   wherein a gate of the second transistor is electrically connected to the other of the source electrode and the drain electrode of the first transistor,   wherein the photoelectric conversion element comprises a first conductive layer, a semiconductor layer over the first conductive layer and a second conductive layer over the semiconductor layer,   wherein the semiconductor layer comprises a silicon layer,   wherein one of the source electrode and the drain electrode of the first transistor is electrically connected to the second conductive layer,   wherein the first transistor and the second transistor are field effect transistors, and   wherein the photoelectric conversion element is configured to supply current between the first conductive layer and the second conductive layer in accordance with the illuminance of the incident light.   
     
     
         16 . The display device according to  claim 15 ,
 wherein the first transistor comprises an oxide semiconductor layer,   wherein the source electrode and the drain electrode of the first transistor are over and in contact with the oxide semiconductor layer,   wherein the oxide semiconductor layer comprises an intrinsic or substantially intrinsic oxide semiconductor, and   wherein the oxide semiconductor layer has a carrier concentration of lower than 1×10 14 /cm 3 .   
     
     
         17 . The display device according to  claim 14 , further comprising:
 a reading circuit configured to read the data based on the illuminance of the incident light supplied from the plurality of photodetectors; and   a data processing circuit configured to generate difference data between two pieces of data based on the illuminance of the incident light.   
     
     
         18 . The display device according to  claim 15 ,
 wherein the source electrode, the drain electrode and the first conductive layer are over and in contact with a first insulating layer, and   wherein a second insulating layer is provided so as to be in contact with an oxide semiconductor layer and the first conductive layer.   
     
     
         19 . The display device according to  claim 15 ,
 wherein an off-state current of the first transistor per micrometer of channel width is between 100 yA and about 10 −30  A.