US2017040550A1PendingUtilityA1

Material for photoelectric conversion element for use in imaging element, and photoelectric conversion element including same

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Assignee: NIPPON KAYAKU KKPriority: Apr 25, 2014Filed: Apr 22, 2015Published: Feb 9, 2017
Est. expiryApr 25, 2034(~7.7 yrs left)· nominal 20-yr term from priority
Inventors:Hidenori YakushijiKazuki NiimiRyoutarou MoritaTatsuya YamamotoToshifumi InouchiMasahiro Hamada
Y02E10/549H10K 85/6576H10F 30/20H10F 39/12C07D 495/04H01L 51/0074H01L 27/307H10K 39/32H10K 30/81H10K 30/20H10K 2102/103
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Claims

Abstract

The present invention provides a material for photoelectric conversion elements for use in imaging elements which comprises a compound represented by the following formula (1). The material for photoelectric conversion elements for use in imaging elements, which comprises a compound represented by the following formula (1), is used to produce a photoelectric conversion element which is excellent in terms of hole- or electron-leakage prevention, thermal resistance to processing temperatures, transparency to visible light, etc. (In formula (1), R 1 and R 2 each independently represent a substituted or unsubstituted aromatic group.)

Claims

exact text as granted — not AI-modified
1 . A material for a photoelectric conversion element for use in an imaging element, comprising a compound represented by the following formula (1): 
       
         
           
           
               
               
           
         
       
       wherein R 1  and R 2  each independently represent a substituted or unsubstituted aromatic group. 
     
     
         2 . The material for a photoelectric conversion element for use in an imaging element according to  claim 1 , wherein the compound of the formula (1) is a compound represented by the following formula (2): 
       
         
           
           
               
               
           
         
       
       wherein R 1  and R 2  are as defined in the formula (1) according to  claim 1 . 
     
     
         3 . The material for a photoelectric conversion element for use in an imaging element according to  claim 1 , wherein R 1  and R 2  in the formula (1) or the formula (2) are each independently a substituted or unsubstituted aromatic hydrocarbon group. 
     
     
         4 . The material for a photoelectric conversion element for use in an imaging element according to  claim 3 , wherein each of R 1  and R 2  in the formula (1) or the formula (2) is a substituted or unsubstituted phenyl group. 
     
     
         5 . The material for a photoelectric conversion element for use in an imaging element according to  claim 4 , wherein each of R 1  and R 2  in the formula (1) or the formula (2) is a phenyl group having a substituted or unsubstituted aromatic hydrocarbon group. 
     
     
         6 . The material for a photoelectric conversion element for use in an imaging element according to  claim 5 , wherein each of R 1  and R 2  in the formula (1) or the formula (2) is a phenyl group having a substituted or unsubstituted phenyl group. 
     
     
         7 . The material for a photoelectric conversion element for use in an imaging element according to  claim 6 , wherein each of R 1  and R 2  in the formula (1) or the formula (2) is a phenyl group having a biphenyl group. 
     
     
         8 . The material for a photoelectric conversion element for use in an imaging element according to  claim 4 , wherein each of R 1  and R 2  in the formula (1) or the formula (2) is a phenyl group having an alkyl group having 1 to 12 carbon atoms. 
     
     
         9 . The material for a photoelectric conversion element for use in an imaging element according to  claim 8 , wherein each of R 1  and R 2  in the formula (1) or the formula (2) is a phenyl group having a methyl group or an ethyl group. 
     
     
         10 . A photoelectric conversion element for use in an imaging element, comprising a material for a photoelectric conversion element for use in an imaging element according to  claim 1 . 
     
     
         11 . A photoelectric conversion element for use in an imaging element, the photoelectric conversion element having (A) a first electrode film, (B) a second electrode film, and (C) a photoelectric conversion portion disposed between the first electrode film and the second electrode film, wherein the photoelectric conversion portion (C) comprises at least (c-1) a photoelectric conversion layer and (c-2) an organic thin-film layer other than the photoelectric conversion layer, and the organic thin-film layer (c-2) other than the photoelectric conversion layer comprises a material for a photoelectric conversion element for use in an imaging element according to  claim 1 . 
     
     
         12 . The photoelectric conversion element for use in an imaging element according to  claim 11 , wherein the organic thin-film layer (c-2) other than the photoelectric conversion layer is an electron blocking layer. 
     
     
         13 . The photoelectric conversion element for use in an imaging element according to  claim 11 , wherein the organic thin-film layer (c-2) other than the photoelectric conversion layer is a hole blocking layer. 
     
     
         14 . The photoelectric conversion element for use in an imaging element according to  claim 11 , wherein the organic thin-film layer (c-2) other than the photoelectric conversion layer is an electron transport layer. 
     
     
         15 . The photoelectric conversion element for use in an imaging element according to  claim 11 , wherein the organic thin-film layer (c-2) other than the photoelectric conversion layer is a hole transport layer. 
     
     
         16 . The photoelectric conversion element for use in an imaging element according to  claim 11 , further having (D) a thin-film transistor having a hole accumulation portion and (E) a signal readout portion which reads a signal responding to charge accumulated in the thin-film transistor. 
     
     
         17 . The photoelectric conversion element for use in an imaging element according to  claim 16 , wherein the thin-film transistor (D) having a hole accumulation portion further has (d) a connection portion which electrically connects the hole accumulation portion to any one of the first electrode film and the second electrode film. 
     
     
         18 . An imaging element in which a plurality of photoelectric conversion elements for use in an imaging element according to  claim 10  are arranged in an array pattern. 
     
     
         19 . A photosensor comprising a photoelectric conversion element for use in an imaging element according to  claim 10 .

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