Design of disk/pad clean with wafer and wafer edge/bevel clean module for chemical mechanical polishing

Abstract

A method and apparatus for cleaning a substrate after chemical mechanical planarizing (CMP) is provided. The apparatus comprises a housing, a substrate holder rotatable on a first axis and configured to retain a substrate in a substantially vertical orientation, a first pad holder having a pad retaining surface facing the substrate holder in a parallel and space apart relation, the first pad holder rotatable on a second axis rotatable parallel to the first axis, a first actuator operable to move the pad holder relative to the substrate holder to change a distance defined between the first axis and the second axis, and a second pad holder disposed in the housing, the second pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, wherein the second pad holder is couple with a rotary arm.

1 . A method for cleaning a substrate, comprising:
 spinning a substrate disposed in a substantially vertical orientation;   providing a cleaning fluid to a surface of the spinning substrate;   pressing a first pad against the surface of the spinning substrate;   moving the first pad across the surface of the substrate along a curved path;   providing a polishing fluid to an exclusion region, edge portion, or both the exclusion region and edge portion of the spinning substrate;   pressing a second pad against the exclusion region, edge portion, or both the exclusion region and the edge portion of the spinning substrate; and   moving the second pad laterally across the exclusion region, edge portion, or both the exclusion region and edge portion of the substrate.   
     
     
         2 . The method of  claim 1 , wherein pressing the first pad against the surface of the spinning substrate further comprises spinning the first pad. 
     
     
         3 . The method of  claim 2 , wherein pressing the second pad against the spinning substrate further comprises spinning the second pad. 
     
     
         4 . The method of  claim 3 , further comprising:
 placing the substrate in a megasonic cleaning module prior to moving the first pad across the surface of the substrate along the curved path;   placing the substrate in one or more brush modules after moving the second pad laterally across the exclusion region, edge portion, or both the exclusion region and edge portion of the substrate; and   placing the substrate in dryer after placing the substrate in the one or more brush modules.   
     
     
         5 . The method of  claim 4 , further comprising:
 planarizing the surface of the substrate prior to placing the substrate in the megasonic cleaning module.   
     
     
         6 . The method of  claim 4 , further comprising:
 providing the cleaning fluid to the substrate after moving the first pad across the surface of the substrate along the curved path and prior to placing the substrate in the one or more brush modules.   
     
     
         7 . The method of  claim 1 , wherein the first pad has a diameter less than half the diameter of the substrate. 
     
     
         8 . The method of  claim 7 , wherein the second pad has a diameter less than half the diameter of the substrate. 
     
     
         9 . The method of  claim 1 , wherein the cleaning fluid is deionized water. 
     
     
         10 . A method for cleaning a substrate, comprising:
 rotating a substrate disposed in a vertical orientation on a first axis;   providing a cleaning fluid to a surface of the rotating substrate;   pressing a cleaning pad against the rotating substrate;   rotating the cleaning pad on a second axis, wherein the first axis is parallel to the second axis;   moving the cleaning pad across the substrate along a curved path;   providing a polishing fluid to an exclusion region, an edge portion, or both the exclusion region and the edge portion of the rotating substrate;   pressing a polishing pad against the rotating substrate;   rotating the polishing pad on a third axis parallel the first axis and the second axis; and   moving the polishing pad laterally across the exclusion region, the edge portion, or both the exclusion region and the edge portion of the rotating substrate.   
     
     
         11 . The method of  claim 10 , wherein the cleaning pad is coupled with a rotary arm assembly comprising a rotary arm for moving the cleaning pad across the substrate along the curved path. 
     
     
         12 . The method of  claim 11 , wherein the rotary arm assembly further comprises a lateral actuator mechanism for moving the cleaning pad toward the substrate. 
     
     
         13 . The method of  claim 10 , further comprising:
 contacting the polishing pad with a conditioning disk; and   rotating the conditioning disk on a fourth axis parallel to the first axis and the second axis to condition the polishing pad.   
     
     
         14 . The method of  claim 10 , further comprising:
 placing the substrate in a megasonic cleaning module prior to moving the cleaning pad across the substrate along the curved path;   placing the substrate in one or more brush modules after moving the polishing pad laterally across the exclusion region, the edge portion, or both the exclusion region and the edge portion of the rotating substrate; and   placing the substrate in dryer after placing the substrate in the one or more brush modules.   
     
     
         15 . The method of  claim 14 , further comprising:
 planarizing a surface of the substrate prior to placing the substrate in the megasonic cleaning module.   
     
     
         16 . The method of  claim 14 , further comprising:
 providing the cleaning fluid to the substrate after moving the cleaning pad laterally across the surface of the substrate and prior to placing the substrate in the one or more brush modules.   
     
     
         17 . The method of  claim 10 , wherein the cleaning pad has a diameter less than half the diameter of the substrate. 
     
     
         18 . The method of  claim 10 , wherein the polishing pad has a diameter less than half the diameter of the substrate. 
     
     
         19 . The method of  claim 10 , wherein the cleaning fluid is deionized water.