Radiation-sensitive resin composition, resist pattern-forming method, acid generator and compound
Abstract
The present invention provides a radiation-sensitive resin composition that contains a polymer having a structural unit that includes an acid-labile group; and an acid generator, wherein the acid generator includes a compound including a sulfonate anion having SO 3 − , wherein a hydrogen atom or an electron-donating group bonds to an α carbon atom with respect to SO 3 − , and an electron-withdrawing group bonds to a β carbon atom with respect to SO 3 − ; and a radiation-degradable onium cation. The compound preferably has a group represented by the following formula (1-1) or (1-2). In the following formulae (1-1) and (1-2), R 1 and R 2 each independently represent a hydrogen atom or a monovalent electron-donating group. R 3 represent a monovalent electron-withdrawing group. R 4 represents a hydrogen atom or a monovalent hydrocarbon group.
Claims
exact text as granted — not AI-modified1 - 12 . (canceled)
13 : A radiation-sensitive resin composition, comprising:
a polymer comprising a structural unit which comprises an acid-labile group; and at least one acid generator comprising a first acid generator represented by formula (2), and optionally a second acid generator other than the first acid generator:
(R 5 n X—Z (2)
wherein in the formula (2):
Z represents a group represented by formula (1-1) or (1-2);
X represents —OCO—;
n is an integer of 1 to 3;
R 5 represents a cycloalkyl group, or a group comprising a lactone structure;
in a case where n is no less than 2, a plurality of R 5 s are identical or different; and
two or more of Z, X and R 5 optionally bond to each other to form a ring structure,
wherein in the formulae (1-1) and (1-2):
R 1 and R 2 each independently represent a hydrogen atom or a methyl group;
R 3 represents a trifluoromethyl group;
R 4 represents a hydrogen atom; and
M + represents a monovalent radiation-degradable onium cation.
14 : The radiation-sensitive resin composition according to claim 13 ,
wherein n in the formula (2) is 1.
15 : The radiation-sensitive resin composition according to claim 13 , wherein the radiation-degradable onium cation is a sulfonium cation or an iodonium cation.
16 : The radiation-sensitive resin composition according to claim 13 , wherein the structural unit that includes an acid-labile group is represented by formula (4):
wherein in the formula (4),
R 7 represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group;
R 8 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms;
R 9 and R 10 each independently represent a monovalent linear hydrocarbon group having 1 to 10 carbon atoms or a monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms; and
R 9 and R 10 optionally taken together represent an alicyclic structure having 3 to 20 carbon atoms together with the carbon atom to which R 9 and R 10 bond.
17 : The radiation-sensitive resin composition according to claim 13 , wherein a content of the first acid generator in the at least one acid generator is in a range of 25% by mass to 90% by mass.
18 : The radiation-sensitive resin composition according to claim 13 , wherein a content of the first acid generator in the at least one acid generator is in a range of 30% by mass to 70% by mass.
19 : The radiation-sensitive resin composition according to claim 13 , further comprising an acid diffusion controller.
20 : The radiation-sensitive resin composition according to claim 13 , further comprising a fluorine atom-containing polymer other than the polymer.
21 : The radiation-sensitive resin composition according to claim 13 , wherein Z represents a group represented by formula (1-1).
22 : The radiation-sensitive resin composition according to claim 21 , wherein n is 1.
23 : The radiation-sensitive resin composition according to claim 22 , wherein R 1 and R 2 each represent a hydrogen atom.
24 : A resist pattern-forming method, comprising:
applying the radiation-sensitive resin composition according to claim 13 on a substrate to form the resist film; exposing the resist film; and developing the exposed resist film.
25 : A compound represented by formula (2):
(R 5 n X—Z (2)
wherein in the formula (2):
Z represents a group represented by formula (1-1) or (1-2);
X represents —OCO—;
n is an integer of 1 to 3;
R 5 represents a cycloalkyl group, or a group comprising a lactone structure;
in a case where n is no less than 2, a plurality of R 5 s are identical or different; and
two or more of Z, X and R 5 optionally bond to each other to form a ring structure,
wherein in the formulae (1-1) and (1-2):
R 1 and R 2 each independently represent a hydrogen atom or a methyl group;
R 3 represents a trifluoromethyl group;
R 4 represents a hydrogen atom; and
M + represents a monovalent radiation-degradable onium cation.
26 : The compound according to claim 25 , wherein Z represents a group represented by formula (1-1).
27 : The compound according to claim 26 , wherein n is 1.
28 : The compound according to claim 27 , wherein R 1 and R 2 each represent a hydrogen atom.Join the waitlist — get patent alerts
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