Method for producing energy and apparatus therefor

Abstract

A method for producing energy by exothermal reactions between hydrogen and a transition metal comprises a step 110 of depositing an amount of crystals of the transition metal in the form of micro/nanometric clusters having a predetermined crystalline structure on a surface of a substrate, wherein each clusters has a number of atoms of the transition metal lower than a predetermined number of atoms, and in such a way that the substrate contains on its surface a number of clusters that is larger than a minimum number. The method provide also performing at least once a start-up sequence is performed at least once a start-up sequence comprising the step 114 of quantitatively removing any gas adsorbed in the substrate and in the transition metal by applying a predetermined vacuum degree, a step 120 of bringing hydrogen into contact with the crystals, a step 130 of heating the crystals up to an adsorption temperature higher than a predetermined critical temperature, thus causing hydrogen adsorption to the crystals forming a reaction core, and a step of impulsively acting on the reaction core in order to trigger the exothermal reactions between the hydrogen and the transition metal in the clusters. Once the reaction started, a step 140 is provided of removing heat from the reaction core in order to obtain a determined power and to maintain the temperature of the reaction core above the critical temperature.

1 . A method for producing energy by exothermal reactions between hydrogen and a transition metal, said method providing the steps of:
 depositing an amount of crystals of said transition metal in the form of micro/nanometric clusters having a predetermined crystalline structure on a surface of a substrate consisting of a solid body that has a predetermined volume and shape, wherein each of said clusters has a number of atoms of said transition metal lower than a predetermined number of atoms,   and in such a way that said substrate contains on its surface a number of clusters that is larger than a minimum number, in particular said minimum number is at least 10 9  clusters per square centimetre, wherein a start-up sequence is performed at least once, said start-up sequence comprising the steps of:
 bringing and maintaining for a predetermined cleaning time said substrate and said crystals to/at a predetermined vacuum degree, in order to quantitatively remove gas adsorbed in said substrate and in said transition metal; 
 bringing hydrogen into contact with said crystals; 
 heating said crystals up to an adsorption temperature higher than a predetermined critical temperature, thus causing an adsorption of hydrogen to said crystals, said substrate, said crystals and said hydrogen adsorbed thereto forming a reaction core; 
 impulsively acting on said reaction core in order to trigger said exothermal reactions between said hydrogen and said transition metal in said clusters; 
   removing heat from said reaction core in order to obtain a determined power and to maintain the temperature of said reaction core above said critical temperature.   
     
     
         2 . A method according to  claim 1 , wherein said step of depositing said amount of crystals is carried out in such a way that said determined quantity of crystals of said transition metal in the form of micro/nanometric clusters is proportional to said power. 
     
     
         3 . A method according to  claim 1 , wherein said minimum number is at least 10 10  clusters per square centimetre, in particular at least 10 11  clusters per square centimetre, more in particular at least 10 12  clusters per square centimetre; 
     
     
         4 . A method according to  claim 1 , wherein said step of depositing said amount of crystals is effected by a process of physical deposition on said substrate of a metal vapour that is made of said transition metal. 
     
     
         5 . A method according to  claim 1 , wherein said step of depositing said amount of crystals is carried out by a process selected from the group comprised of:
 sputtering;   a process comprising an evaporation or a sublimation of said transition metal, and thereafter a condensation of said transition metal on said substrate;   epitaxial deposition;   spraying;   heating said transition metal up to approaching the melting point and thereafter slow cooling said transition metal, in particular down to an average temperature of said reaction core of about 600° C.   
     
     
         6 . A method according to  claim 1 , wherein after said step of depositing said amount of crystals a step is provided of quickly cooling said substrate and said deposited transition metal, in order to cause a “freezing” of said transition metal in the form of clusters having said crystalline structure, said step of quickly cooling selected from the group comprised of: tempering; causing a current of hydrogen to flow over said transition metal as deposited on said substrate, said hydrogen having a predetermined temperature that is lower than the temperature of said substrate. 
     
     
         7 . A method according to  claim 1 , wherein said start-up sequence is iterated until said step of impulsively acting on said reaction core causes a permanent generation of heat, i.e. until a successful triggering of the reaction core occurs. 
     
     
         8 . A method according to  claim 1 , wherein said vacuum degree is at least 10 −9  bar. 
     
     
         9 . A method according to  claim 1 , wherein said substrate and said crystals are maintained at a temperature set between 350° C. and 500° C. during said cleaning time. 
     
     
         10 . A method according to  claim 1 , wherein said step of bringing and maintaining said substrate and said crystals to/at a predetermined vacuum degree is performed according to at least ten vacuum cycles, each vacuum cycle comprising creating said vacuum and subsequently restoring a substantially atmospheric pressure of hydrogen. 
     
     
         11 . A method according to  claim 1 , wherein during said step of bringing hydrogen into contact with said crystals said hydrogen has a partial pressure set between 0,001 millibar and 10 bar absolute, in particular between 1 millibar and 1 bar absolute. 
     
     
         12 . A method according to  claim 1 , wherein during said step of bringing hydrogen into contact with said crystals said hydrogen flows at a speed lower than 3 m/s. 
     
     
         13 . A method according to  claim 12 , wherein said hydrogen flows in a direction that is substantially parallel to a surface of said crystals deposited on said substrate. 
     
     
         14 . A method according to  claim 1 , wherein after said heating step of said determined quantity of crystals a step is provided of cooling said reaction core down to room temperature, and said step of impulsively acting on said reaction core comprises a step of quickly rising the temperature of said reaction core from room temperature to said adsorption temperature, in particular said quick rise is carried out in a time shorter than five minutes. 
     
     
         15 . A method according to  claim 1 , wherein said step of impulsively acting on said reaction core provides an impulsive action selected from the group comprised of:
 a thermal shock, in particular caused by a flow of a gas, in particular of hydrogen, which has a predetermined temperature that is lower than the reaction core temperature;   a mechanical impulse, in particular a mechanical impulse whose duration is less than 1/10 of second;   a pressure impulse, in which the pressure of hydrogen in contact with the crystals is suddenly increased or decreased by additionally supplying/withdrawing an amount of hydrogen;   an ultrasonic impulse, in particular an ultrasonic impulse whose frequency is set between 20 and 40 kHz;   a laser ray that is impulsively cast onto said reaction core;   an impulsive application of a package of electromagnetic fields, in particular said fields selected from the group comprised of: a radiofrequency pulse whose frequency is larger than 1 kHz; X rays; y rays;   an electrostriction impulse that is generated by an impulsive electric current that flows through an electrostrictive portion of said reaction core;   an impulsive application of a beam of elementary particles; in particular, such elementary particles selected from the group comprised of electrons, protons and neutrons;   an impulsive application of a beam of ions of elements, in particular of ions of one or more transition metals, said elements selected from a group that excludes O; Ar; Ne; Kr; Rn; N; Xe.   an electric voltage impulse that is applied between two points of a piezoelectric portion of said reaction core;   an impulsive magnetostriction that is generated by a magnetic field pulse along said reaction core which has a magnetostrictive portion.   
     
     
         16 . A method according to  claim 1 , wherein before said step of impulsively acting on said reaction core a step is carried out of creating a temperature gradient, i.e. a temperature difference, between two points of said reaction core, said gradient in particular set between 100° C. and 300° C. 
     
     
         17 . A method according to  claim 1 , wherein said clusters have a face-centred cubic crystalline structure, fcc (110). 
     
     
         18 . A method according to  claim 1 , comprising step of maintaining a condition selected from the group comprised of:
 a magnetic induction field of intensity set between 1 Gauss and 70000 Gauss;   an electric field of intensity set between 1 V/m and 300000 V/m during said step of removing heat from said reaction core.