Schottky barrier diode and method for manufacturing the same

Abstract

A Schottky barrier diode includes: an n+ type of silicon carbide substrate; an n-type of epitaxial layer formed on a first surface of the n+ type of silicon carbide substrate; a plurality of p+ regions formed inside the n-type of epitaxial layer; a Schottky electrode formed in an upper portion of the n-type of epitaxial layer of an electrode region; and an ohmic electrode formed on a second surface of the n+ type of silicon carbide substrate, wherein the plurality of p+ regions are formed to be spaced apart from each other at a predetermined interval within the n-type of epitaxial layer.

What is claimed is: 
     
         1 . A Schottky barrier diode, comprising:
 an n+ type of silicon carbide substrate;   an n-type of epitaxial layer formed on a first surface of the n+ type of silicon carbide substrate;   a plurality of p+ regions formed inside the n-type of epitaxial layer;   a Schottky electrode formed in an upper portion of the n-type of epitaxial layer of an electrode region; and   an ohmic electrode formed on a second surface of the n+ type of silicon carbide substrate,   wherein the plurality of p+ regions are formed to be spaced apart from each other at a predetermined interval within the n-type of epitaxial layer.   
     
     
         2 . The Schottky barrier diode of  claim 1 , wherein the plurality of p+ regions are each formed with the same width. 
     
     
         3 . A method for manufacturing a Schottky barrier diode, comprising:
 forming an n-type of epitaxial layer on a first surface of an n+ type of silicon carbide substrate;   patterning a plurality of trenches to be spaced apart from each other at a predetermined interval in an upper surface of the n-type of epitaxial layer;   forming a first blocking part within the plurality of trenches;   forming a plurality of second blocking parts to be spaced apart from each other at a predetermined interval in an upper portion of the n-type of epitaxial layer;   forming a p+ region by injecting p+ ions into the n-type of epitaxial layer using the first blocking part and the plurality of second blocking parts as a mask;   removing the first blocking part and the plurality of second blocking parts;   growing the n-type of epitaxial layer to enclose the p+ region;   forming a Schottky electrode in an upper portion of the grown n-type of epitaxial layer; and   forming an ohmic electrode on a second surface of the n+ type of silicon carbide substrate.   
     
     
         4 . The method of  claim 3 , wherein each of the plurality of trenches is patterned so that a depth of each trench is shorter than a height of the n-type of epitaxial layer. 
     
     
         5 . The method of  claim 3 , wherein the plurality of second blocking parts contacts at least two first blocking parts. 
     
     
         6 . The method of  claim 5 , wherein a side of one of the plurality of second blocking parts is connected to a side of the first blocking part. 
     
     
         7 . The method of  claim 3 , wherein the first blocking part and the plurality of second blocking parts are made of the same material. 
     
     
         8 . The method of  claim 7 , wherein the first blocking part and the plurality of second blocking parts are configured of an oxide layer. 
     
     
         9 . The method of  claim 3 , wherein the removing of the first blocking part and the plurality of second blocking parts is performed by a wet etch method or a dry etch method. 
     
     
         10 . The method of  claim 3 , wherein the growing of the n-type of epitaxial layer to enclose the p+ region comprises:
 growing the n-type of epitaxial layer within the plurality of trenches; and   growing the n-type of epitaxial layer in an upper portion of the grown n-type of epitaxial layer and the p+ region.   
     
     
         11 . A Schottky barrier diode, comprising:
 an n+ type of silicon carbide substrate;   an n-type of epitaxial layer formed on a first surface of the n+ type of silicon carbide substrate;   a plurality of p+ regions formed inside the n-type of epitaxial layer;   a Schottky electrode formed in an upper portion of the n-type of epitaxial layer; and   an ohmic electrode formed on a second surface of the n+ type of silicon carbide substrate,   wherein the n-type of epitaxial layer and the plurality of p+ regions are manufactured by the method for manufacturing a Schottky barrier diode according to  claim 3 .