Electrical Device and Fabrication Method

Abstract

An electrical device with a fin structure, a first section of the fin structure having a first width and a first height, a second section of the fin structure having a second width and a second height, wherein the first width is smaller than the second width and the first height is lower than the second height.

What is claimed is: 
     
         1 . An electrical device comprising:
 a fin structure comprising a first section, a second section and a third section;   the first section comprising a first width and a first height;   the second section comprising a second width and a second height; and   the third section comprising a third width and a third height,   wherein the first width is smaller than the second width and the first height is lower than the second height, wherein the first width is smaller than the third width and the first height is lower than the third height, and wherein the second and third sections are electrically connected with each other via the first section, and   wherein the second section of the fin structure comprises a first partial fin core structure, wherein the third section of the fin structure comprises a second partial fin core structure, and wherein the fin structure further comprises a layer formed on the first and second partial fin core structures and further in the first section of the fin structure, wherein the first and second partial fin core structures are electrically connected with each other via the layer.   
     
     
         2 . The electrical device of  claim 1 , wherein the layer is formed by a selective epitaxial growth process. 
     
     
         3 . The electrical device of  claim 1 , wherein the layer is an epitaxial layer. 
     
     
         4 . The electrical device of  claim 2 , wherein the layer is partially silicided. 
     
     
         5 . The electrical device of  claim 2 , wherein the layer is fully silicided. 
     
     
         6 . An electrical fuse device comprising:
 a fin structure comprising a first fin region and a second fin region, and a fusible link region electrically connecting the first and second fin regions with each other,   wherein in the fusible link region the fin structure comprises a smaller width and a lower height than in the first and second fin regions, wherein the first fin region comprises a first partial fin core structure, wherein the second fin region comprises a second partial fin core structure, and wherein the fin structure comprises an epitaxial layer formed selectively on the first and second partial fin core structures and in the fusible link region, wherein the first and second fin regions are electrically connected with each other by the epitaxial layer.