US2017032946A1PendingUtilityA1

Integrated anode and activated reactive gas source for use in a magnetron sputtering device

Assignee: VIAVI SOLUTIONS INCPriority: Apr 16, 2010Filed: Oct 11, 2016Published: Feb 2, 2017
Est. expiryApr 16, 2030(~3.7 yrs left)· nominal 20-yr term from priority
C23C 14/0063H01J 37/3488H01J 2237/006C23C 14/35H01J 37/3244H01J 37/3405H01J 37/3423
63
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Claims

Abstract

The invention relates to an integrated anode and activated reactive gas source for use in a magnetron sputtering device and a magnetron sputtering device incorporating the same. The integrated anode and activated reactive gas source comprises a vessel having an interior conductive surface, comprising the anode, and an insulated outer body isolated from the chamber walls of the coating chamber. The vessel has a single opening with a circumference smaller that that of the vessel in communication with the coating chamber. Sputtering gas and reactive gas are coupled through an input into the vessel and through the single opening into the coating chamber. A plasma is ignited by the high density of electrons coming from the cathode and returning to the power supply through the anode. A relatively low anode voltage is sufficient to maintain a plasma of activated reactive gas to form stoichiometric dielectric coatings.

Claims

exact text as granted — not AI-modified
1 - 23 . (canceled) 
     
     
         24 . An integrated anode and activated reactive gas source, comprising a vessel including:
 an interior conductive surface of the vessel, electrically coupled to a positive output of a power supply, comprising the anode such that the anode is the preferred return path for electrons, an insulated outer surface of the vessel electrically isolated from the chamber walls;   a single opening in communication with the coating chamber;   a sputtering gas source coupled into the vessel; and   a reactive gas source; and   wherein the interior conductive surface is electrically insulated from the chamber walls by an insulating material.   
     
     
         25 . The integrated anode and activated reactive gas source defined in  claim 24 , wherein the single opening is smaller than a circumference of the vessel to shield the interior conductive surface from most sputtered material. 
     
     
         26 . The integrated anode and activated reactive gas source defined in  claim 24 , wherein the single opening is dimensioned to raise the pressure locally within the vessel higher than a pressure in the coating chamber. 
     
     
         27 . The integrated anode and activated reactive gas source defined in  claim 24 , wherein the voltage provided to the anode comprising the interior conductive surface of the vessel from about 15 to about 80 Volts. 
     
     
         28 . The integrated anode and activated reactive gas source defined in  claim 27 , wherein the sputtering gas and reactive gas are provided through a single inlet port into the vessel. 
     
     
         29 . The integrated anode and activated reactive gas source defined in  claim 27 , wherein the sputtering gas and reactive gas are provided through separate inlet ports into the vessel. 
     
     
         30 . The integrated anode and activated reactive gas source defined in  claim 24 , wherein the inner conductive surface is made of a material chosen from at least one of copper and stainless steel. 
     
     
         31 . The integrated anode and activated reactive gas source defined in  claim 24 , wherein the single opening is located on a side of the vessel. 
     
     
         32 . The integrated anode and activated reactive gas source defined in  claim 24 , wherein the single opening is located on an end of the vessel. 
     
     
         33 . The integrated anode and activated reactive gas source defined in  claim 24 , further comprising a water cooling pipe substantially around the anode 
     
     
         34 . The integrated anode and activated reactive gas source defined in  claim 24 , wherein the single opening is out of a line of sight of a target. 
     
     
         35 . The integrated anode and activated reactive gas source defined in  claim 24 , wherein the vessel is cylindrical in shape with a diameter of at least about 10 cm and a length of at least about 20 cm. 
     
     
         36 . The integrated anode and activated reactive gas source defined in  claim 24 , wherein the opening has an area of about 20 cm 2 . 
     
     
         37 . A method of providing an activated reactive gas into a coating chamber of a magnetron sputtering device, the method comprising:
 providing an integrated anode and activated reactive gas source comprising:   a vessel including:
 a conductive interior surface having one or more sidewalls and an adjoining end wall defining an interior of the vessel; 
 an insulated outer surface, for electrically isolating the vessel from chamber walls of the coating chamber; 
 a single opening to the interior of the vessel in communication with the coating chamber; 
 one or more gas inlet ports to the interior of the vessel; 
 a source of sputtering gas; and 
 a source of reactive gas; 
   electrically coupling the conductive interior surface to a positive output of a power supply, such that the conductive interior surface serves as an anode providing a voltage difference to a cathode and as a primary return path for electrons;   providing a sputtering gas from the source of sputtering gas through one of the one or more gas inlet ports into the interior of the vessel, such that the sputtering gas is provided through the single opening of the vessel into the coating chamber; and   providing a reactive gas from the source of reactive gas through one of the one or more gas inlet ports into the interior of the vessel, such that the reactive gas becomes activated forming a plasma in the interior of the vessel and the activated reactive gas is provided through the single opening of the vessel into the coating chamber.   
     
     
         38 . The method of  claim 37 , wherein a pressure in the chamber is below about 0.267 Pa for low scattering processes. 
     
     
         39 . The method of  claim 37 , wherein a pressure in the chamber is more than about 0.400 Pa.

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