US2017027668A1PendingUtilityA1

Method for producing a surface structure on an implant, and such an implant

Assignee: NOBEL BIOCARE SERVICES AGPriority: Dec 21, 2001Filed: May 4, 2016Published: Feb 2, 2017
Est. expiryDec 21, 2021(expired)· nominal 20-yr term from priority
Inventors:Jan Hall
A61F 2002/30922A61F 2002/3085A61F 2/3094A61F 2002/30322A61C 13/0018A61F 2310/00598A61F 2002/3097A61C 13/0003A61C 13/0022A61F 2250/0026A61F 2/30767A61F 2310/00616A61F 2/30771A61F 2250/0014A61C 8/0015A61C 8/0022A61F 2002/30004A61C 8/0018A61C 2008/0046
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Claims

Abstract

A surface structure is produced on an outer surface of an implant or a fixture and forms a base structure in a range of implants related to different types and qualities of jaw bone. During production of the surface, parts of a turning tool are placed against the implant or against a blank which is intended to form the implant. The parts and/or the implant are assigned controls which give rise to mutual displacements between the parts and the implant so that the parts follow a substantially spiral trajectory along the outer surface. By means of said controls, a long wave pattern is formed with successive peaks and with through lying between these. In this connection, a through can be arranged adjacent to the outer parts of an existing thread. The controls are chosen so as to produce through depths in the range of 25 to 250 μm, preferably 50 to 200 μm. The invention also relates to an implant which bas the same character as the implant produced by the method.

Claims

exact text as granted — not AI-modified
1 - 15 . (canceled) 
     
     
         16 . A dental implant comprising:
 an implant body defining a longitudinal axis and an exterior surface; and   a thread extending about the implant body in a spiral trajectory, the thread defining an outer surface, wherein when seen in side view, the outer surface of the thread comprises a wave pattern comprising at least one trough positioned between a pair of peaks, the wave pattern extending generally in the direction of the longitudinal axis of the implant body, the at least one trough and the pair of peaks extending in a course that substantially follows the spiral trajectory of the thread, the wave pattern having a wave length between the pair of peaks of between 25 to 250 μm.   
     
     
         17 . The implant as in  claim 16 , wherein the wave pattern includes at least two troughs that extend substantially parallel along the spiral trajectory. 
     
     
         18 . The implant as in  claim 16 , wherein the wave pattern varies along the implant. 
     
     
         19 . The implant as in  claim 16 , wherein the trough varies along the spiral trajectory. 
     
     
         20 . The implant as in  claim 16 , wherein the wave pattern forms a base structure for a second wave pattern having a wave length less than a wave length of the wave pattern, the second wave pattern being applied on the wave pattern. 
     
     
         21 . The implant as in  claim 16 , wherein the wave pattern forms a base structure for an oxide layer produced on the wave pattern. 
     
     
         22 . The implant as  claim 16 , wherein the wave pattern forms a base structure for both a second wave pattern having a wave length less than the wave pattern and a formed layer located on top of the intermediate wave pattern. 
     
     
         23 . The implant as in  claim 16 , wherein the implant forms part of a set of implants, the implants in the set having a range of wave pattern structures for complying with a specific jaw bone structure. 
     
     
         24 . The implant as in  claim 16 , wherein the wave pattern is formed by laser bombardment. 
     
     
         25 . The implant as in  claim 16 , wherein the wave pattern comprises three waves each having a peak and a trough. 
     
     
         26 . The implant as in  claim 16 , wherein the wave pattern comprises a pair of troughs that extend generally parallel relative to each other substantially following the spiral trajectory of the thread along the outer surface of the thread. 
     
     
         27 . The implant as in  claim 16 , wherein the at least one trough of the wave pattern extends along an apex of the thread. 
     
     
         28 . The implant as in  claim 16 , wherein the at least one trough of the wave pattern extends along a flank of the thread.

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