Semiconductor device and method of manufacturing the same

Abstract

A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.

1 . (canceled) 
     
     
         2 . A semiconductor device comprising:
 a semiconductor film comprising:   a plurality of rectangular semiconductor regions disposed in parallel, wherein each of the plurality of rectangular semiconductor regions has a first edge and a second edge; and   a pair of semiconductor regions, wherein one of the pair of semiconductor regions is connected to each of the first edges and the other of the pair of semiconductor regions is connected to each of the second edges; and   an electrode crossing over the plurality of rectangular semiconductor regions with an insulating film interposed therebetween,   wherein each of the plurality of rectangular semiconductor regions has a top surface and side surfaces,   wherein a channel forming region is formed in a portion of each of the plurality of rectangular semiconductor regions which is overlapped with the electrode,   wherein portions of the electrode extend below the top surface of each of the plurality of rectangular semiconductor regions and the insulating film interposed therebetween is provided between one of the side surfaces of one of the plurality of rectangular semiconductor regions and one of the side surfaces of another of the plurality of rectangular semiconductor regions, and   wherein the plurality of rectangular semiconductor regions have a channel width larger than a height of the plurality of rectangular semiconductor regions in a cross sectional view.   
     
     
         3 . The semiconductor device according to  claim 2 , wherein the electrode is applied with common potential during operation of the semiconductor device. 
     
     
         4 . The semiconductor device according to  claim 2 , wherein a length of the each of the plurality of rectangular semiconductor regions in a channel width direction is 0.5 to 1.0 μm. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein the semiconductor film is a crystalline semiconductor film. 
     
     
         6 . The semiconductor device according to  claim 2 , further comprising a glass substrate,
 wherein the semiconductor film over the glass substrate.   
     
     
         7 . The semiconductor device according to  claim 2 , wherein the semiconductor film on an insulating surface. 
     
     
         8 . A semiconductor device comprising:
 a semiconductor film comprising:   a plurality of rectangular semiconductor regions disposed in parallel, wherein each of the plurality of rectangular semiconductor regions has a first edge and a second edge; and   a pair of semiconductor regions, wherein one of the pair of semiconductor regions is connected to each of the first edges and the other of the pair of semiconductor regions is connected to each of the second edges; and   an electrode crossing over the plurality of rectangular semiconductor regions with an insulating film interposed therebetween,   wherein each of the plurality of rectangular semiconductor regions has a top surface and side surfaces,   wherein a channel forming region is formed in a portion of each of the plurality of rectangular semiconductor regions which is overlapped with the electrode,   wherein portions of the electrode extend below the top surface of each of the plurality of rectangular semiconductor regions and the insulating film interposed therebetween is provided between one of the side surfaces of one of the plurality of rectangular semiconductor regions and one of the side surfaces of another of the plurality of rectangular semiconductor regions,   wherein the each of the plurality of rectangular semiconductor regions comprises the channel forming region and an LDD region, and   wherein the plurality of rectangular semiconductor regions have a channel width larger than a height of the plurality of rectangular semiconductor regions in a cross sectional view.   
     
     
         9 . The semiconductor device according to  claim 8 , wherein the electrode is applied with common potential during operation of the semiconductor device. 
     
     
         10 . The semiconductor device according to  claim 8 , wherein a length of the each of the plurality of rectangular semiconductor regions in a channel width direction is 0.5 to 1.0 mm μm. 
     
     
         11 . The semiconductor device according to  claim 8 , wherein the semiconductor film is a crystalline semiconductor film. 
     
     
         12 . The semiconductor device according to  claim 8 , further comprising a glass substrate,
 wherein the semiconductor film over the glass substrate.   
     
     
         13 . The semiconductor device according to  claim 8 , wherein the semiconductor film on an insulating surface.