US2017025539A1PendingUtilityA1

Dual-material mandrel for epitaxial crystal growth on silicon

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Assignee: IBMPriority: Jul 20, 2015Filed: Mar 28, 2016Published: Jan 26, 2017
Est. expiryJul 20, 2035(~9 yrs left)· nominal 20-yr term from priority
Inventors:Sanghoon LeeEffendi LeobandungBrent A. Wacaser
H10P 95/06H10P 50/692H10P 50/642H10P 14/3424H10P 14/3414H10P 14/3411H10P 14/3404H10P 14/2922H10P 14/2905H10P 14/276H10P 14/271H01L 27/0886H01L 29/7849H01L 29/785H01L 29/16H01L 29/0649H01L 29/045H10D 86/011H10D 84/834H10D 84/0158H10D 84/038H10D 64/021H10D 62/822H10D 62/405H10D 62/115H10D 62/86H10D 62/85H10D 62/83H10D 62/82H10D 30/798H10D 30/751H10D 30/62H10D 30/024H10D 86/215
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Claims

Abstract

In one example, a method for fabricating a semiconductor device includes etching a layer of silicon to form a plurality of fins and growing layers of a semiconductor material directly on sidewalls of the plurality of fins, wherein the semiconductor material and surfaces of the sidewalls have different crystalline properties.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device, comprising:
 a plurality of fins comprising silicon; and   a layer of a semiconductor material grown directly on a sidewall of at least one fin of the plurality of fins, wherein the semiconductor material and a surface of the at least one fin have different crystalline properties.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the semiconductor material is a Group III/V material. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the semiconductor material is a Group II/VI material. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the semiconductor material is a Group IV material. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the different crystalline properties comprises different lattice constants. 
     
     
         6 . The semiconductor device of  claim 1 , wherein a crystal orientation of the semiconductor material is the same as a crystal orientation of the surface of the at least one fin. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the sidewall is aligned in a crystal orientation that is defined by a Miller index of (111). 
     
     
         8 . The semiconductor device of  claim 1 , wherein the semiconductor device is a finFET device. 
     
     
         9 . The semiconductor device of  claim 8 , wherein the layer of the semiconductor material forms a conducting channel of the finFET device. 
     
     
         10 . The semiconductor device of  claim 1 , wherein the layer of the semiconductor material forms a one-dimensional pattern. 
     
     
         11 . The semiconductor device of  claim 1 , wherein the layer of the semiconductor material forms a two-dimensional pattern. 
     
     
         12 .- 20 . (canceled)

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