Method of fabricating a bpm template using hierarchical bcp density patterns

Abstract

The embodiments disclose a method including patterning a template substrate to have different densities using hierarchical block copolymer density patterns in different zones including a first pattern and a second pattern, using a first directed self-assembly to pattern a first zone in the substrate using a first block copolymer material, and using a second directed self-assembly to pattern a second zone in the substrate using a second block copolymer material.

What is claimed is: 
     
         1 . An apparatus comprising:
 a first zone pattern; and   a second zone pattern, wherein the first zone pattern has a higher pattern density in comparison to the second zone pattern,   wherein the first zone pattern and the second zone pattern are formed sequentially using a first directed self-assembly and the second directed self-assembly respectively, and wherein a first block copolymer material is used to form an imprinted first pattern to form the first zone pattern and wherein a second block copolymer material is used to form an imprinted second pattern to form the second zone pattern, and wherein during formation of the first zone pattern the second zone pattern is protected and wherein during formation of the second zone pattern the first zone pattern is protected.   
     
     
         2 . The apparatus of  claim 1 , wherein the first zone pattern includes a data zone and wherein the second zone pattern includes a servo zone, wherein a density of the data zone is at least twice a density of the servo zone. 
     
     
         3 . The apparatus of  claim 1 , wherein the first block copolymer material and the second block copolymer material include a combination of sphere-forming, cylinder-forming, or lamellae-forming BCP thin films. 
     
     
         4 . The apparatus of  claim 1 , wherein the first zone pattern includes a two dimensional dots array pattern and the second zone pattern includes a one dimensional trench pattern. 
     
     
         5 . The apparatus of  claim 1 , wherein the first and second block copolymer material have a natural periodicity value Lo=25 nm lamellae-forming to form line patterning 12.5 nm. 
     
     
         6 . The apparatus of  claim 1 , wherein the first zone pattern is protected during the formation of the second zone pattern by depositing a coating of a buffer layer and a photoresist layer on the imprinted first pattern. 
     
     
         7 . The apparatus of  claim 6 , wherein the buffer layer includes chromium and hydrogen silsesquioxane, wherein the first directed self-assembly is used to pattern the first zone pattern in an overlay alignment process. 
     
     
         8 . The apparatus of  claim 1 , wherein the second zone pattern is protected during the formation of the first zone pattern by depositing a coating of a buffer layer and a photoresist layer on the imprinted second pattern. 
     
     
         9 . The apparatus of  claim 8 , wherein the buffer layer includes chromium and hydrogen silsesquioxane, wherein the second directed self-assembly is used to pattern the second zone pattern in an overlay alignment process. 
     
     
         10 . The apparatus of  claim 1 , wherein the apparatus is trimmed down to thickness of the imprinted first pattern zone that includes two dimensional dots array imprint before performing the first directed self-assembly in the first zone pattern and wherein the apparatus is trimmed down to thickness of the imprinted second pattern zone that includes one dimensional imprint trench before performing the second directed self-assembly in the second zone pattern. 
     
     
         11 . An apparatus comprising:
 a first zone comprising imprinted first pattern; and   a second zone comprising imprinted second pattern, wherein a density of pattern in the first zone is different from the second zone,   wherein the first pattern and the second pattern are formed sequentially using a first directed self-assembly and the second directed self-assembly respectively, and wherein a first block copolymer material is used to form the first pattern and wherein a second block copolymer material is used to form the second pattern, and wherein during formation of the first pattern in the first zone the second zone is protected and wherein during formation of the second pattern in the second zone the first zone is protected and wherein the protection in the second zone is removed prior to protecting the first zone.   
     
     
         12 . The apparatus of  claim 11 , wherein the first pattern is in a data zone and wherein the second pattern is in a servo zone, and wherein a density of the data zone is at least twice a density of the servo zone. 
     
     
         13 . The apparatus of  claim 11 , wherein the first block copolymer material and the second block copolymer material include a combination of sphere-forming, cylinder-forming, or lamellae-forming BCP thin films. 
     
     
         14 . The apparatus of  claim 11 , wherein the first pattern includes a two dimensional dots array pattern and the second pattern includes a one dimensional trench pattern. 
     
     
         15 . The apparatus of  claim 11 , wherein the first and second block copolymer material have a natural periodicity value Lo=25 nm lamellae-forming to form line patterning 12.5 nm. 
     
     
         16 . The apparatus of  claim 11 , wherein the first pattern is protected during the formation of the second pattern by depositing a coating of a buffer layer and a photoresist layer on the imprinted first pattern. 
     
     
         17 . The apparatus of  claim 16 , wherein the buffer layer includes chromium and hydrogen silsesquioxane, wherein the first directed self-assembly is used to pattern the first zone in an overlay alignment process. 
     
     
         18 . The apparatus of  claim 11 , wherein the second pattern is protected during the formation of the first pattern by depositing a coating of a buffer layer and a photoresist layer on the imprinted second pattern. 
     
     
         19 . The apparatus of  claim 18 , wherein the buffer layer includes chromium and hydrogen silsesquioxane, wherein the second directed self-assembly is used to pattern the second zone pattern in an overlay alignment process. 
     
     
         20 . The apparatus of  claim 11 , wherein the apparatus is trimmed down to thickness of the imprinted first pattern that includes two dimensional dots array imprint before performing the first directed self-assembly in the first zone and wherein the apparatus is trimmed down to thickness of the imprinted second pattern that includes one dimensional imprint trench before performing the second directed self-assembly in the second zone.