US2017023957A1PendingUtilityA1
Bias techniques and circuit arrangements to reduce leakage current in a circuit
Est. expiryMay 29, 2034(~7.8 yrs left)· nominal 20-yr term from priority
H02H 9/046H02H 9/045G05F 1/46H10D 89/601H01L 27/0255H01L 27/0266H10D 89/811H10D 89/611
55
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Claims
Abstract
An apparatus includes an input/output (I/O) pin and an electrostatic discharge device. The electrostatic discharge device is coupled to the I/O pin and to a voltage regulator.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method comprising:
providing a discharge current path between an input/output (I/O) pin and an output node of a voltage regulator; and providing a second discharge current path between the output node and a ground pin.
2 . The method of claim 1 , further comprising selectively coupling the voltage regulator to a supply voltage by controlling a pull-up transistor and a pull-down transistor.
3 . The method of claim 2 , wherein the pull-up transistor and the pull-down transistor are included in a head switch coupled to the voltage regulator.
4 . The method of claim 1 , selectively coupling the voltage regulator to a supply voltage via a head switch, the head switch including a first transistor having a first oxide thickness that is greater than a second oxide thickness of a second transistor of circuitry, the circuitry powered by the voltage regulator.
5 . The method of claim 4 , wherein the supply voltage is selectively coupled to the voltage regulator based on an enable signal.
6 . The method of claim 4 , wherein the circuitry includes a device to protect from electrostatic discharge.
7 . The method of claim 1 , wherein the discharge current path includes a first diode, and wherein the second discharge current path includes an electrostatic discharge device.
8 . The method of claim 7 , further comprising disabling a clamp circuit of the electrostatic discharge device responsive to an enable signal.
9 . The method of claim 1 , further comprising providing a third discharge current path between the I/O pin and the ground pin.
10 . The method of claim 9 , wherein the discharge current path includes a first diode, wherein the second discharge current path includes an electrostatic discharge device, and wherein the third discharge current path includes a second diode.
11 . A method comprising:
selectively coupling a supply voltage to a voltage regulator via a head switch, wherein the head switch includes a first transistor having a first oxide thickness that is greater than a second oxide thickness of a transistor of circuitry, the circuitry powered by the voltage regulator; and discharging an electrostatic charge along a discharge current path between the voltage regulator and an input/output (I/O) pin.
12 . The method of claim 11 , head switch includes a pull-up transistor and a pull-down transistor, and wherein the pull-up transistor and the pull-down transistor are responsive to an enable signal to selectively couple the supply voltage to the voltage regulator.
13 . The method of claim 11 , further comprising discharging a second electrostatic charge along a second discharge current path between the voltage regulator and a ground pin.
14 . The method of claim 13 , wherein the discharge current path includes a diode, and wherein the second discharge current path includes an electrostatic discharge device.
15 . The method of claim 14 , further comprising disabling a clamp circuit of the electrostatic discharge device responsive to a disable signal.
16 . The method of claim 11 , wherein the circuitry is in a different voltage domain than the head switch.
17 . A method comprising:
discharging a first electrostatic charge along a first discharge current path between an input/output (I/O) pin and an output node of a voltage regulator; and discharging a second electrostatic charge along a second discharge current path between the output node and a ground pin.
18 . The method of claim 17 , further comprising selectively coupling the voltage regulator to a supply voltage via a head switch, the head switch including a first transistor having a first oxide thickness that is greater than a second oxide thickness of a second transistor of circuitry, the circuitry powered by the voltage regulator.
19 . The method of claim 18 , wherein the circuitry includes a device to be protected from electrostatic discharges.
20 . The method of claim 17 , further comprising discharging a third electrostatic discharge along a third discharge path between the I/O pin and the ground pin.Join the waitlist — get patent alerts
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