Plasma-Resistant Component, Method For Manufacturing The Plasma-Resistant Component, And Film Deposition Apparatus Used For Manufacturing The Plasma-Resistant Component

Abstract

The present invention provides a plasma-resistant component for use in a plasma apparatus, wherein an oxide film is formed on at least part of a surface of a substrate of the component, the oxide film is a deposited oxide film formed as an aggregate of polycrystalline particles, the polycrystalline particles being formed by sinter-bonding of microparticles having an average particle size of 0.05 to 3 μm, and the deposited oxide film has a film thickness of 10 μm or more and 200 μm or less and a film density of 90% or more. Due to above structure, it becomes possible to obtain a plasma-resistant component and a method of manufacturing a plasma-resistant component in which the generation of particles removed from the component is stably and effectively suppressed, and damage such as corrosion and deformation rarely occur during the regeneration process.

1 . A plasma-resistant component for use in a plasma apparatus, wherein an oxide film is formed on at least part of a surface of a substrate of the component, the oxide film is a deposited oxide film formed as an aggregate of polycrystalline particles, the polycrystalline particles being formed by sinter-bonding of microparticles having an average particle size of 0.05 to 3 μm, and the deposited oxide film has a film thickness of 10 μm or more and 200 μm or less and a film density of 90% or more. 
     
     
         2 . The plasma-resistant component according to  claim 1 , wherein the polycrystalline particles forming the deposited oxide film are polycrystalline particles having an average particle size of 0.5 to 10 μm when a cross section of the deposited oxide film perpendicular to a substrate plane is observed microscopically. 
     
     
         3 . The plasma-resistant component according to  claim 1 , wherein no microcracks are present in the polycrystalline particles of the deposited oxide film. 
     
     
         4 . The plasma-resistant component according to  claim 1 , wherein an area percentage of microparticles having a particle size of 3 μm or less present in the deposited oxide film is 10% or less when a cross section of the deposited oxide film perpendicular to the substrate plane is observed microscopically. 
     
     
         5 . The plasma-resistant component according to  claim 1 , wherein an area percentage of particles flattened by melting present in the deposited oxide film is 10% or less when a cross section of the deposited oxide film perpendicular to the substrate plane is observed microscopically. 
     
     
         6 . The plasma-resistant component according to  claim 1 , wherein the oxide film is formed of a two-layered structure of a thermally sprayed oxide film as an undercoat layer formed on the substrate and a deposited oxide film formed on a surface of the undercoat layer, a total film thickness of the thermally sprayed oxide film and the deposited oxide film is 20 μm or more and 300 μm or less, and a film thickness of the deposited oxide film is 10 μm or more and 200 μm or less. 
     
     
         7 . The plasma-resistant component according to  claim 1 , wherein the oxide film is formed of a three-layered structure of an oxide film formed by oxidation treatment of the surface of the substrate, a thermally sprayed oxide film as an undercoat layer formed on a surface of the oxide film, and a deposited oxide film formed on an upper surface of the thermally sprayed oxide film, a total film thickness of the oxide film, the thermally sprayed oxide film as the undercoat layer, and the deposited oxide film is 20 μm or more and 300 μm or less, and a film thickness of the deposited oxide film is 10 μm or more and 200 μm or less. 
     
     
         8 . The plasma-resistant component according to  claim 1 , wherein raw material microparticles used for formation of the deposited oxide film are oxide particles having a purity of 99.9% or more. 
     
     
         9 . The plasma-resistant component according to  claim 1 , wherein a surface roughness Ra of the deposited oxide film is 3 μm or less. 
     
     
         10 . The plasma-resistant component according to  claim 1 , wherein the deposited oxide film comprises Y 2 O 3 . 
     
     
         11 . The plasma-resistant component according to  claim 1 , wherein the deposited oxide film comprises Al 2 O 3 . 
     
     
         12 . A method for manufacturing the plasma-resistant component according to  claim 1 , comprising steps of: supplying a slurry comprising oxide particles to a central portion of a high temperature plasma jet or a high temperature gas flow; heating the oxide particles to a temperature less than both a boiling point and a sublimation point of an oxide and spraying the oxide particles onto a substrate at a spray speed of 400 to 1000 m/s; and forming a deposited oxide film on the substrate. 
     
     
         13 . A film layering apparatus used for manufacture of the plasma-resistant component according to  claim 1 , comprising a substrate and a deposited oxide film covering a surface of the substrate, comprising:
 a generation chamber for generating a high temperature plasma jet or a high temperature gas by a plasma arc;   a raw material slurry supply port for supplying a raw material slurry comprising an oxide raw material powder to a central portion of the high temperature plasma jet or the high temperature gas;   a fuel supply port for supplying a fuel or an oxygen gas to the generation chamber;   a gas supply port for supplying a working gas to the generation chamber; and   a spray nozzle for gasifying the raw material slurry with the working gas and the fuel or the oxygen gas, heating an oxide raw material in a gas to a temperature less than both a boiling point and a sublimation point of an oxide, and controlling the oxide raw material in a state in which it is sprayed onto a surface of a substrate at a spray speed of 400 to 1000 m/s.   
     
     
         14 . The film layering apparatus according to  claim 13 , wherein a spray distance between a tip portion of the spray nozzle for spraying the oxide raw material onto a surface of a substrate and the surface of the substrate is 100 to 400 mm. 
     
     
         15 . The film layering apparatus according to  claim 13 , wherein a content of the oxide raw material powder in the raw material slurry is 30 to 80% by volume.