US2017021604A1PendingUtilityA1

Method for Pore Sealing of Porous Materials Using Polyimide Langmuir-Blodgett Film

Assignee: IMECPriority: Mar 20, 2012Filed: Oct 4, 2016Published: Jan 26, 2017
Est. expiryMar 20, 2032(~5.6 yrs left)· nominal 20-yr term from priority
H10P 14/6516H10P 14/6344H10W 20/48B05D 1/208B32B 2307/204B32B 2379/08B32B 2305/026B32B 37/15B32B 27/281B32B 2457/00H05K 3/143Y10T428/249991Y10T428/249979B05D 1/20C08G 73/1067C09D 179/08H05K 2201/0162H05K 2201/0154H05K 2201/0116H05K 2201/0104H05K 2201/01H05K 1/03B32B 2307/00B32B 2305/07B32B 2260/046B32B 27/04B32B 18/00C08J 2483/02C08J 2379/08C08J 5/18B82Y 40/00B82Y 30/00B05D 2505/50B05D 1/204
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Claims

Abstract

Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

Claims

exact text as granted — not AI-modified
1 . (canceled) 
     
     
         2 . A porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate,
 wherein the porous substrate is an ultra-low κ dielectric material having a dielectric constant κ lower than 2.3 and the porous substrate has a pore size of 1 to 5 nm, and   wherein the sealing layer includes an imidized continuous monolayer of a polyimide precursor.   
     
     
         3 . The porous substrate of  claim 2 , wherein the sealing layer has a thickness lower than 5 nm. 
     
     
         4 . The porous substrate of  claim 2 , wherein the polyimide precursor is polyamic acid alkylamine salt. 
     
     
         5 . The porous substrate of  claim 2 , wherein the sealing layer does not penetrate into pores of the porous substrate. 
     
     
         6 . The porous substrate of  claim 2 , wherein the dielectric constant κ is lower than 2.1. 
     
     
         7 . The porous substrate of  claim 2 , wherein the porous substrate has an average pore size of 2 nm. 
     
     
         8 . The porous substrate of  claim 2 , wherein the substrate is a porous organosilicate. 
     
     
         9 . The porous substrate of  claim 8 , wherein the porous organosilicate comprises SiOCH material having a κ-value of 2.3 and an average pore size of 2 nm. 
     
     
         10 . The porous substrate of  claim 2 , wherein the imidized continuous monolayer of the polyimide precursor was formed on a liquid surface. 
     
     
         11 . The porous substrate of  claim 10 , wherein the imidized continuous monolayer of the polyimide precursor was transferred onto the porous substrate using a Langmuir-Blodgett technique.

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